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Action of Excimer Laser Pulses on Light-Emitting InGaAs/GaAs Structures with a (Ga,Mn)As-Layer

Physics of the solid state, 2021-03, Vol.63 (3), p.425-434

2021

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Pulsed Laser Irradiation of Light-Emitting Structures with a (Ga,Mn)As Layer

Physics of the solid state, 2021-11, Vol.63 (11), p.1593-1600

2021

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Methods for Switching Radiation Polarization in GaAs Laser Diodes

Technical physics, 2021-11, Vol.66 (11), p.1194-1199

2021

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Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1059-1063

2020

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Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.956-960

2020

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Diode Heterostructures with a Ferromagnetic (Ga,Mn)As Layer

Physics of the solid state, 2020-03, Vol.62 (3), p.423-430

2020

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Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor

Technical physics letters, 2019-03, Vol.45 (3), p.235-238

2019

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GaAs diodes for TiT2-based betavoltaic cells

Applied radiation and isotopes, 2022-01, Vol.179, p.110030-110030, Article 110030

2022

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Resonant enhancement of the transversal Kerr effect in the InMnAs layers

Journal of physics. Condensed matter, 2010-10, Vol.22 (39), p.396002-396002

2010

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The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

Journal of magnetism and magnetic materials, 2019-05, Vol.478, p.84-90

2019

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Optical and magneto-optical properties of room-temperature ferromagnetic In(Ga)MnAs layers, deposited by pulse laser ablation

Journal of magnetism and magnetic materials, 2009-04, Vol.321 (7), p.829-832

2009

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Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers

Journal of magnetism and magnetic materials, 2022-08, Vol.556, p.169360, Article 169360

2022

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Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids

Scientific reports, 2019-05, Vol.9 (1), p.7294-7294, Article 7294

2019

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Epitaxial Structures for Low-Barrier Mixing Microwave Diodes Grown on a GaAs Substrate

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.857-861

2023

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GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (12), p.1709-1711

2019

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Pulsed Laser Irradiation of GaAs-Based Light-Emitting Structures

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (12), p.1598-1604

2020

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Diode Heterostructures with Narrow-Gap Ferromagnetic A3FeB5 Semiconductors of Various Conduction Type

Physics of the solid state, 2021, Vol.63 (7), p.1028-1035

2021

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The Use of Films of Multilayer Graphene as Coatings of Light-Emitting GaAs Structures

Optics and spectroscopy, 2020-03, Vol.128 (3), p.387-394

2020

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Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures

Scientific reports, 2016-04, Vol.6 (1), p.24537-24537, Article 24537

2016

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The circular polarization inversion in δ⟨Mn⟩/InGaAs/GaAs light-emitting diodes

Applied physics letters, 2015-07, Vol.107 (4)

2015

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Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.0–1.2 μ m due to increased charge carrier's localization

Journal of applied physics, 2014-11, Vol.116 (20)

2014

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The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1398-1402

2018

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Surfactant effect of bismuth in the MOVPE growth of the InAs quantum dots on GaAs

Nanotechnology, 2000-12, Vol.11 (4), p.221-226

2000

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1.06 μm wavelength photodetectors with metamorphic buffer layers grown on GaAs substrates

Journal of physics. Conference series, 2018-12, Vol.1124 (4), p.41037

2018

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Power characteristics of lasers with quantum-well waveguides and blocking layers

Quantum electronics (Woodbury, N.Y.), 2018-04, Vol.48 (4), p.390-394

2018

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Action of Excimer Laser Pulses on Light-Emitting InGaAs/GaAs Structures with a (Ga,Mn)As-Layer

Pulsed Laser Irradiation of Light-Emitting Structures with a (Ga,Mn)As Layer

Methods for Switching Radiation Polarization in GaAs Laser Diodes

Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures

Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy

Diode Heterostructures with a Ferromagnetic (Ga,Mn)As Layer

Enhancing the Circular Polarization of Spin Light-Emitting Diodes by Processing in Selenium Vapor

GaAs diodes for TiT2-based betavoltaic cells

Resonant enhancement of the transversal Kerr effect in the InMnAs layers

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

Optical and magneto-optical properties of room-temperature ferromagnetic In(Ga)MnAs layers, deposited by pulse laser ablation

Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers

Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids

Epitaxial Structures for Low-Barrier Mixing Microwave Diodes Grown on a GaAs Substrate

GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells

Pulsed Laser Irradiation of GaAs-Based Light-Emitting Structures

Diode Heterostructures with Narrow-Gap Ferromagnetic A3FeB5 Semiconductors of Various Conduction Type

The Use of Films of Multilayer Graphene as Coatings of Light-Emitting GaAs Structures

Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures

The circular polarization inversion in δ⟨Mn⟩/InGaAs/GaAs light-emitting diodes

Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.0–1.2 μ m due to increased charge carrier's localization

The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures

Surfactant effect of bismuth in the MOVPE growth of the InAs quantum dots on GaAs

1.06 μm wavelength photodetectors with metamorphic buffer layers grown on GaAs substrates

Power characteristics of lasers with quantum-well waveguides and blocking layers

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