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Evaluation of SiGe:C HBT intrinsic reliability using conventional and step stress methodologies

Microelectronics and reliability, 2006-08, Vol.46 (8), p.1272-1278

2006

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Radiation-induced mobility degradation in p-channel double-diffused metal-oxide-semiconductor power transistors at 300 and 77 K

Journal of applied physics, 1993-03, Vol.73 (6), p.2910-2915

1993

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Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications

Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2002, p.193-196

2002

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Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1993-12, Vol.40 (6), p.1307-1315

1993

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Outstanding noise characteristics of SiGe:C HBT allow flexibility in high-frequency RF designs

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003, 2003, p.151-154

2003

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The surface generation hump in irradiated power MOSFETs

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.2443-2451

1994

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Effects of radiation-induced oxide-trapped charge on inversion-layer hole mobility at 300 and 77 K

Applied physics letters, 1992-06, Vol.60 (25), p.3156-3158

1992

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Application of test method 1019.4 to non-hardened power MOSFETs

IEEE transactions on nuclear science, 1994, Vol.41 (3), p.555-560

1994

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Determining the drain doping in DMOS transistors using the hump in the leakage current

IEEE transactions on electron devices, 1994-12, Vol.41 (12), p.2326-2336

1994

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Application of test method 1019.4 to nonhardened power MOSFETs

IEEE transactions on nuclear science, 1994-06, Vol.41 (3), p.555-560

1994

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Analysis of gamma-radiation induced instability mechanisms in CMOS transistors

Solid-state electronics, 1989-05, Vol.32 (5), p.349-353

1989

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Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions

IEEE transactions on nuclear science, 1992-12, Vol.39 (6), p.2012-2017

1992

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Comparison between the effects of positive noncatastrophic HBM ESD stress in n-channel and p-channel power MOSFETs

IEEE electron device letters, 1991-10, Vol.12 (10), p.546-549

1991

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Annealing of ESD-induced damage in power MOSFETs

Journal of electrostatics, 1993-12, Vol.31 (2), p.131-144

1993

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Detection of ESD-induced noncatastrophic damage in p-channel power MOSFETs

Journal of electrostatics, 1992, Vol.28 (3), p.241-252

1992

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Gamma-radiation-induced inversion-layer hole mobility degradation in p-channel power MOSFETs at 300 K and 77 K

Radecs 91: Radiation : Effects on Components and Systems :First European Conference on Radiation and Its Effects on Devices and Systems : LA Grande, 1992

1992

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New analytical expression for the drain current of short-channel MOS transistors in the triode region

Electronics letters, 1987, Vol.23 (16), p.862-864

1987

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Application of test method 1019.4 to non-hardened power MOSFETs

IEEE transactions on nuclear science, 1993-06, Vol.41 (3), p.555-560

1993

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Mechanisms of positive gate-bias stress induced instabilities in CMOS transistors

Microelectronics and reliability, 1987, Vol.27 (6), p.1001-1016

1987

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Comparison of 1/ < e1 > f < /e1 > noise in irradiated power MOSFETs measured in the linear and saturation regions

IEEE transactions on nuclear science, 1992-12, Vol.39 (6), p.2012-2017

1992

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A cost-effective 0.25 /spl mu/m L/sub eff/ BiCMOS technology featuring graded-channel CMOS (GCMOS) and a quasi-self-aligned (QSA) NPN for RF wireless applications

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000, p.110-113

2000

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Mechanism of positive gate-bias stress induced instabilities in CMOS transistors

Microelectronics and reliability, 1987, Vol.27 (6), p.1001-1016

1987

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Application of test method 1019. 4 to non-hardened power MOSFETs

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994, Vol.41:3Pt1

1994

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Evaluation of SiGe:C HBT intrinsic reliabillty using conventional & step stress methodologies

[Reliability of Compound Semiconductors] ROCS Workshop, 2005, 2005, p.43-56

2005

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Gamma-Radiation Effects in CMOS Transistors

ESSDERC '87: 17th European Solid State Device Research Conference, 1987, p.725-728

1987

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Evaluation of SiGe:C HBT intrinsic reliability using conventional and step stress methodologies

Radiation-induced mobility degradation in p-channel double-diffused metal-oxide-semiconductor power transistors at 300 and 77 K

Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications

Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

Outstanding noise characteristics of SiGe:C HBT allow flexibility in high-frequency RF designs

The surface generation hump in irradiated power MOSFETs

Effects of radiation-induced oxide-trapped charge on inversion-layer hole mobility at 300 and 77 K

Application of test method 1019.4 to non-hardened power MOSFETs

Determining the drain doping in DMOS transistors using the hump in the leakage current

Application of test method 1019.4 to nonhardened power MOSFETs

Analysis of gamma-radiation induced instability mechanisms in CMOS transistors

Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions

Comparison between the effects of positive noncatastrophic HBM ESD stress in n-channel and p-channel power MOSFETs

Annealing of ESD-induced damage in power MOSFETs

Detection of ESD-induced noncatastrophic damage in p-channel power MOSFETs

Gamma-radiation-induced inversion-layer hole mobility degradation in p-channel power MOSFETs at 300 K and 77 K

New analytical expression for the drain current of short-channel MOS transistors in the triode region

Application of test method 1019.4 to non-hardened power MOSFETs

Mechanisms of positive gate-bias stress induced instabilities in CMOS transistors

Comparison of 1/ < e1 > f < /e1 > noise in irradiated power MOSFETs measured in the linear and saturation regions

A cost-effective 0.25 /spl mu/m L/sub eff/ BiCMOS technology featuring graded-channel CMOS (GCMOS) and a quasi-self-aligned (QSA) NPN for RF wireless applications

Mechanism of positive gate-bias stress induced instabilities in CMOS transistors

Application of test method 1019. 4 to non-hardened power MOSFETs

Evaluation of SiGe:C HBT intrinsic reliabillty using conventional & step stress methodologies

Gamma-Radiation Effects in CMOS Transistors

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