UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Two modes of HVPE growth of GaN and related macrodefects

Physica status solidi. C, 2013-03, Vol.10 (3), p.468-471

2013

Volltextzugriff (PDF)

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

Applied physics letters, 2010-03, Vol.96 (13)

2010

Volltextzugriff (PDF)

ZnO/GaN heterostructure for LED applications

Journal of modern optics, 2009-03, Vol.56 (5), p.653-660

2009

Volltextzugriff (PDF)

Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

Journal of physics. Conference series, 2019-03, Vol.1199 (1), p.12004

2019

Volltextzugriff (PDF)

Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

Applied physics letters, 1999-11, Vol.75 (20), p.3138-3140

1999

Volltextzugriff (PDF)

Spontaneous and stimulated emission from photopumped GaN grown on SiC

Applied physics letters, 1995-07, Vol.67 (4), p.533-535

1995

Volltextzugriff (PDF)

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.115-121

2017

Volltextzugriff (PDF)

Growth of AlGaN on Si(111) by gas source molecular beam epitaxy

Applied physics letters, 2000-05, Vol.76 (21), p.3028-3030

2000

Volltextzugriff (PDF)

Investigation of n-GaN/p-SiC/n-SiC heterostructures

Journal of crystal growth, 2007-03, Vol.300 (1), p.239-241

2007

Volltextzugriff (PDF)

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

Materials science forum, 2006-10, Vol.527-529, p.1537-1541

2006

Volltextzugriff (PDF)

Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates

Technical physics letters, 2007-01, Vol.33 (1), p.83-85

2007

Volltextzugriff (PDF)

Optically Transparent 6H-Silicon Carbide

Materials science forum, 1998-01, Vol.264-268, p.53-56

1998

Volltextzugriff (PDF)

Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia

Journal of applied physics, 2002-02, Vol.91 (3), p.1209-1212

2002

Volltextzugriff (PDF)

Optical confinement and threshold currents in III–V nitride heterostructures: Simulation

Journal of applied physics, 1997-04, Vol.81 (7), p.2952-2956

1997

Volltextzugriff (PDF)

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates

Semiconductors (Woodbury, N.Y.), 2016-05, Vol.50 (5), p.699-704

2016

Volltextzugriff (PDF)

Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

Semiconductors (Woodbury, N.Y.), 2012-08, Vol.46 (8), p.1032-1039

2012

Volltextzugriff (PDF)

Defect-related tunneling mechanism of efficiency droop in III-nitridelight-emitting diodes

Applied physics letters, 2010-03, Vol.96 (13), p.133502-133502-3

2010

Volltextzugriff (PDF)

Electrical Properties of n-GaN∕p-SiC Heterojunctions

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (12), p.1403

Ledyaev, O. Yu

2005

Volltextzugriff (PDF)

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

Materials science forum, 2011, Vol.679-680, p.12-15

2011

Volltextzugriff (PDF)

Mechanism of the GaN LED efficiency falloff with increasing current

Semiconductors (Woodbury, N.Y.), 2010-06, Vol.44 (6), p.794-800

2010

Volltextzugriff (PDF)

Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

Materials science forum, 2000-05, Vol.338-342, p.497-500

2000

Volltextzugriff (PDF)

Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates

Applied physics letters, 1998-05, Vol.72 (19), p.2361-2363

1998

Volltextzugriff (PDF)

AlGaN pn junctions

Applied physics letters, 1995-07, Vol.67 (1), p.115-117

1995

Volltextzugriff (PDF)

Properties of Si-Doped GaN Layers Grown by HVPE

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.433-437

2001

Volltextzugriff (PDF)

ZnO/GaN heterostructure for LED applications

Journal of modern optics, 2009, Vol.56 (5), p.653-660

2009

Volltextzugriff (PDF)

1 – 25 von 102

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(71)
Mit Volltextzugriff
(80)

Publikationsform

Artikel
(85)
Tagungsberichte
(17)

Sprache

Englisch
(95)
Russisch
(7)

Erscheinungsjahr

n.n

Thema

Science & Technology
(59)
Physical Sciences
(43)
Physics
(41)
Technology
(29)
Materials Science
(25)
Physics, Applied
(24)
Materials Science, Multidisciplinary
(22)
Physics, Condensed Matter
(18)
Engineering
(11)
Engineering, Electrical & Electronic
(10)
Physics And Astronomy
(10)
Gallium Nitrides
(8)
Substrates
(7)
Magnetic Materials
(6)
Magnetism
(6)
Materials Science, Coatings & Films
(6)
Gallium Nitride
(5)
Gan
(5)
Silicon Carbide
(5)
Condensed Matter Physics
(4)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Two modes of HVPE growth of GaN and related macrodefects

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

ZnO/GaN heterostructure for LED applications

Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

Spontaneous and stimulated emission from photopumped GaN grown on SiC

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Growth of AlGaN on Si(111) by gas source molecular beam epitaxy

Investigation of n-GaN/p-SiC/n-SiC heterostructures

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates

Optically Transparent 6H-Silicon Carbide

Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia

Optical confinement and threshold currents in III–V nitride heterostructures: Simulation

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates

Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

Defect-related tunneling mechanism of efficiency droop in III-nitridelight-emitting diodes

Electrical Properties of n-GaN∕p-SiC Heterojunctions

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

Mechanism of the GaN LED efficiency falloff with increasing current

Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates

AlGaN pn junctions

Properties of Si-Doped GaN Layers Grown by HVPE

ZnO/GaN heterostructure for LED applications

Suchergebnisse filtern