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Geometrically Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Crystal growth & design, 2024-08, Vol.24 (15), p.6095-6100

2024

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BAlGaN light‐emitting diode emitting at 350 nm

Electronics letters, 2023-10, Vol.59 (19), p.n/a

2023

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Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD

Journal of applied physics, 2020-01, Vol.127 (2)

2020

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Surface Morphology Evolution of AlGaN Microhoneycomb Structures during Epitaxial Overgrowth

physica status solidi (b), 2024-03, Vol.261 (3), p.n/a

2024

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Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges

Scientific reports, 2020-10, Vol.10 (1), p.16205-16205, Article 16205

2020

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Effect of Surface and Defect Chemistry on the Photocatalytic Properties of Intentionally Defect-Rich ZnO Nanorod Arrays

ACS applied materials & interfaces, 2018-05, Vol.10 (21), p.17994-18004

2018

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InGaN/AlInN interface with enhanced holes to improve photoelectrochemical etching and GaN device release

Semiconductor science and technology, 2023-05, Vol.38 (5), p.55015

2023

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Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (2), p.431-437

2015

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A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content

Journal of physics. D, Applied physics, 2021-01, Vol.54 (3), p.35302

2021

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Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN

Journal of physics. D, Applied physics, 2018-02, Vol.51 (6), p.6

2018

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InAlN-based LEDs emitting in the near-UV region

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCB33

2019

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Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics

Advanced photonics research, 2023-12, Vol.4 (12), p.n/a

2023

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Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells

Applied physics letters, 2020-11, Vol.117 (22)

2020

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Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach

ACS nano, 2016-02, Vol.10 (2), p.1988-1994

2016

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Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering

Carbon (New York), 2022-01, Vol.186, p.128-140

2022

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GaN Nanowire Schottky Barrier Diodes

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2283-2290

2017

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Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD

Nanotechnology, 2017-09, Vol.28 (37), p.375701-375701

2017

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Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well

Nanotechnology, 2017-03, Vol.28 (11), p.115401-115401

2017

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Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition

ACS applied materials & interfaces, 2014-10, Vol.6 (20), p.17954-17964

2014

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Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy

Physica status solidi. A, Applications and materials science, 2020-07, Vol.217 (14), p.n/a

2020

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AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1010

2019

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Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods

Crystal growth & design, 2016-12, Vol.16 (12), p.6769-6775

2016

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Strongly nonparabolic variation of the band gap in InxAl1−xN with low indium content

Semiconductor science and technology, 2015-12, Vol.31 (2)

2015

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Enhanced UV luminescence from InAlN quantum well structures using two temperature growth

Journal of luminescence, 2014-11, Vol.155, p.108-111

2014

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Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy

Crystal growth & design, 2020-06, Vol.20 (6), p.3686-3700

2020

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Geometrically Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

BAlGaN light‐emitting diode emitting at 350 nm

Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD

Surface Morphology Evolution of AlGaN Microhoneycomb Structures during Epitaxial Overgrowth

Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges

Effect of Surface and Defect Chemistry on the Photocatalytic Properties of Intentionally Defect-Rich ZnO Nanorod Arrays

InGaN/AlInN interface with enhanced holes to improve photoelectrochemical etching and GaN device release

Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content

Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN

InAlN-based LEDs emitting in the near-UV region

Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics

Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells

Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach

Strain control in graphene on GaN nanowires: Towards pseudomagnetic field engineering

GaN Nanowire Schottky Barrier Diodes

Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD

Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well

Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition

Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy

AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods

Strongly nonparabolic variation of the band gap in InxAl1−xN with low indium content

Enhanced UV luminescence from InAlN quantum well structures using two temperature growth

Thermal Stability of Crystallographic Planes of GaN Nanocolumns and Their Overgrowth by Metal Organic Vapor Phase Epitaxy

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