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30-GHz Bandwidth With Directly Current-Modulated 980-nm Oxide-Aperture VCSELs

IEEE photonics technology letters, 2017-12, Vol.29 (23), p.2107-2110

2017

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Increased basolateral sorting of carcinoembryonic antigen in a polarized colon carcinoma cell line after cholesterol depletion-Implications for treatment of inflammatory bowel disease

World journal of gastroenterology : WJG, 2008-03, Vol.14 (10), p.1528-1533

2008

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19-Element 2D Top-Emitting VCSEL Arrays

Journal of lightwave technology, 2021-01, Vol.39 (1), p.186-192

2021

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Highly‐Efficient Semiconductor Laser Diodes: Advantages of small, efficient and customized high‐power light sources

Laser-Technik-Journal, 2015-01, Vol.12 (1), p.25-28

Zorn, Martin

2015

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Highly‐Efficient Semiconductor Laser Diodes

Laser-Technik-Journal, 2015-01, Vol.12 (1), p.25-28

Zorn, Martin

2015

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760 nm: Jenoptik's new color for aesthetic applications

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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290-fs pulses from a semiconductor disk laser

Optics express, 2008-04, Vol.16 (8), p.5770-5775

2008

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Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier

Optics express, 2009-06, Vol.17 (13), p.10820-10834

2009

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35 GHz Bandwidth with Directly Current Modulated 980 nm Oxide Aperture Single Cavity VCSELs

2018 IEEE International Semiconductor Laser Conference (ISLC), 2018, p.1-2

2018

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19-element vertical cavity surface emitting laser arrays with inter-vertical cavity surface emitting laser ridge connectors

JPhys photonics, 2020-10, Vol.2 (4), p.4

2020

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Nearly Diffraction-Limited Tapered Lasers at 675 nm With 1-W Output Power and Conversion Efficiencies Above 30

IEEE photonics technology letters, 2011-02, Vol.23 (4), p.266-268

2011

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Methodische Leistungsanalyse von Rechensystemen

Martin Haas, Werner Zorn

2020

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Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes

Journal of crystal growth, 2008-11, Vol.310 (23), p.5175-5177

2008

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Exciton resonance tuning for the generation of subpicosecond pulses from a mode-locked semiconductor disk laser

Applied physics letters, 2006-10, Vol.89 (14)

2006

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20 000 h reliable operation of 100 μm stripe width 650 nm broad area lasers at more than 1.1 W output power

Semiconductor science and technology, 2011-10, Vol.26 (10), p.1-2

2011

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5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31 ^ Emitting at 670 nm

IEEE photonics technology letters, 2008-04, Vol.20 (8), p.575-577

2008

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Optical in-well pumping of a semiconductor disk laser with high optical efficiency

IEEE journal of quantum electronics, 2005-12, Vol.41 (12), p.1439-1449

2005

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20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power

Semiconductor science and technology, 2011-10, Vol.26 (10), p.105011

2011

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Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes

Journal of crystal growth, 2008-11, Vol.310 (23), p.5175-5177

2008

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3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

IEEE journal of selected topics in quantum electronics, 2007-09, Vol.13 (5), p.1188-1193

2007

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Optically pumped semiconductor disk laser with graded and step indices

Applied physics letters, 2006-10, Vol.89 (15), p.151120-151120-3

2006

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Twin-Contact 645-nm Tapered Laser With 500-mW Output Power

IEEE photonics technology letters, 2009-02, Vol.21 (4), p.236-238

2009

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Conductively Cooled 637-nm InGaP Broad-Area Lasers and Laser Bars With Conversion Efficiencies Up to 37% and a Small Vertical Far Field of 30

IEEE photonics technology letters, 2008-11, Vol.20 (22), p.1824-1826

2008

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Thermal properties and degradation behavior of red-emitting high-power diode lasers

Applied physics letters, 2006-10, Vol.89 (18), p.181112-181112-3

2006

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Exciton resonance tuning for the generation of subpicosecond pulsesfrom a mode-locked semiconductor disk laser

Applied physics letters, 2006-10, Vol.89 (14), p.141107-141107-3

2006

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30-GHz Bandwidth With Directly Current-Modulated 980-nm Oxide-Aperture VCSELs

Increased basolateral sorting of carcinoembryonic antigen in a polarized colon carcinoma cell line after cholesterol depletion-Implications for treatment of inflammatory bowel disease

19-Element 2D Top-Emitting VCSEL Arrays

Highly‐Efficient Semiconductor Laser Diodes: Advantages of small, efficient and customized high‐power light sources

Highly‐Efficient Semiconductor Laser Diodes

760 nm: Jenoptik's new color for aesthetic applications

290-fs pulses from a semiconductor disk laser

Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier

35 GHz Bandwidth with Directly Current Modulated 980 nm Oxide Aperture Single Cavity VCSELs

19-element vertical cavity surface emitting laser arrays with inter-vertical cavity surface emitting laser ridge connectors

Nearly Diffraction-Limited Tapered Lasers at 675 nm With 1-W Output Power and Conversion Efficiencies Above 30

Methodische Leistungsanalyse von Rechensystemen

Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes

Exciton resonance tuning for the generation of subpicosecond pulses from a mode-locked semiconductor disk laser

20 000 h reliable operation of 100 μm stripe width 650 nm broad area lasers at more than 1.1 W output power

5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31 ^ Emitting at 670 nm

Optical in-well pumping of a semiconductor disk laser with high optical efficiency

20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power

Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes

3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm

Optically pumped semiconductor disk laser with graded and step indices

Twin-Contact 645-nm Tapered Laser With 500-mW Output Power

Conductively Cooled 637-nm InGaP Broad-Area Lasers and Laser Bars With Conversion Efficiencies Up to 37% and a Small Vertical Far Field of 30

Thermal properties and degradation behavior of red-emitting high-power diode lasers

Exciton resonance tuning for the generation of subpicosecond pulsesfrom a mode-locked semiconductor disk laser

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