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Activation of buried p-GaN in MOCVD-regrown vertical structures

Applied physics letters, 2018-08, Vol.113 (6)

2018

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1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

IEEE electron device letters, 2017-08, Vol.38 (8), p.1071-1074

2017

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IEEE_Xplore

Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy

Applied physics letters, 2017-06, Vol.110 (25)

2017

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1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

IEEE electron device letters, 2015-04, Vol.36 (4), p.375-377

2015

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IEEE_Xplore

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f of 370 GHz

IEEE electron device letters, 2012-07, Vol.33 (7), p.988-990

2012

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IEEE_Xplore

Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

Applied physics letters, 2012-12, Vol.101 (25)

2012

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High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Applied physics letters, 2015-12, Vol.107 (23)

2015

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Gallium nitride tunneling field-effect transistors exploiting polarization fields

Applied physics letters, 2020-02, Vol.116 (7)

2020

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Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Applied physics letters, 2022-03, Vol.120 (12)

2022

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Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts

IEEE electron device letters, 2016-01, Vol.37 (1), p.16-19

2016

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IEEE_Xplore

Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4597-4603

2019

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IEEE_Xplore

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

Applied physics letters, 2018-11, Vol.113 (20)

2018

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Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

Applied physics letters, 2018-09, Vol.113 (12)

2018

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Low temperature AlN growth by MBE and its application in HEMTs

Journal of crystal growth, 2015-09, Vol.425, p.133-137

2015

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Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz

IEEE electron device letters, 2013-03, Vol.34 (3), p.378-380

2013

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IEEE_Xplore

Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD15

2019

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220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

IEEE electron device letters, 2011-09, Vol.32 (9), p.1215-1217

2011

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IEEE_Xplore

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.747-754

2014

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IEEE_Xplore

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

IEEE electron device letters, 2012-05, Vol.33 (5), p.661-663

2012

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IEEE_Xplore

1.7-kV and 0.55- \text\Omega \cdot \text ^ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

IEEE electron device letters, 2016-02, Vol.37 (2), p.161-164

2016

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IEEE_Xplore

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

IEEE electron device letters, 2018-06, Vol.39 (6), p.869-872

2018

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IEEE_Xplore

Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature

2017 75th Annual Device Research Conference (DRC), 2017, p.1-2

2017

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Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes

Applied physics letters, 2015-01, Vol.106 (4)

2015

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Digital Twin in smart manufacturing: remote control and virtual machining using VR and AR technologies

Structural and multidisciplinary optimization, 2022-11, Vol.65 (11), Article 321

2022

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GaN vertical nanowire and fin power MISFETs

2017 75th Annual Device Research Conference (DRC), 2017, p.1-2

2017

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Activation of buried p-GaN in MOCVD-regrown vertical structures

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f of 370 GHz

Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Gallium nitride tunneling field-effect transistors exploiting polarization fields

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts

Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

Low temperature AlN growth by MBE and its application in HEMTs

Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz

Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts

1.7-kV and 0.55- \text\Omega \cdot \text ^ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature

Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes

Digital Twin in smart manufacturing: remote control and virtual machining using VR and AR technologies

GaN vertical nanowire and fin power MISFETs

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