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High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

IEEE photonics journal, 2020-02, Vol.12 (1), p.1-7

2020

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Current transport mechanisms in Pt/Au Schottky contacts to AlInGaN using AlGaN/InGaN short-period superlattices

Applied physics. A, Materials science & processing, 2017-05, Vol.123 (5), p.1-6, Article 344

2017

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Design and implementation of a home embedded surveillance system with ultra-low alert power

IEEE transactions on consumer electronics, 2011-02, Vol.57 (1), p.153-159

2011

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Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstrating FT/Fmax of 350/532 GHz

Microwave and optical technology letters, 2015-12, Vol.57 (12), p.2774-2778

2015

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Properties of a CdZnO/ZnO multiple quantum-well light-emitting diode

Journal of the Korean Physical Society, 2016, 69(7), , pp.1219-1224

2016

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Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs

IEEE journal of quantum electronics, 2009-06, Vol.45 (6), p.575-578

2009

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Intelligent Identification of Chinese and Australian Merino Wool Fibers Based on Image Recognition

Key engineering materials, 2024-03, Vol.978, p.143-148

2024

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Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

Chinese physics letters, 2015-09, Vol.32 (9), p.145-148

柴旭朝周东刘斌谢自力韩平修向前陈鹏陆海张荣郑有炓

2015

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Effects of V/III ratio on the growth of a-plane GaN films

Chinese physics B, 2011-10, Vol.20 (10), p.368-372

2011

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Study on the self-absorption of InGaN quantum wells at high photon density

Applied optics (2004), 2020-06, Vol.59 (16), p.4790

2020

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Properties of an AlGaN/AlN distributed-Bragg-reflector structure

Journal of the Korean Physical Society, 2014, 65(7), , pp.1101-1105

2014

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Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted–molecular beam epitaxy

Journal of crystal growth, 2019-01, Vol.506, p.30-35

2019

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Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells

Chinese physics letters, 2012-07, Vol.29 (7), p.78501-1-078501-4

2012

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Growth and properties of wide spectral white light emitting diodes

Chinese physics B, 2011-11, Vol.20 (11), p.414-416, Article 116801

谢自力张荣傅德颐刘斌修向前华雪梅赵红陈鹏

2011

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The Formation and Characterization of GaN Hexagonal Pyramids

Chinese physics letters, 2013-05, Vol.30 (5), p.56801-1-056801-4

2013

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Synthesis and Growth Mechanism： A Novel Fishing Rod-Shaped GaN Nanorods

Chinese physics letters, 2014-05, Vol.31 (5), p.114-117

张士英修向前华雪梅谢自力刘斌陈鹏韩平陆海张荣郑有炓

2014

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GaN hexagonal pyramids formed by a photo-assisted chemical etching method

Chinese physics B, 2014-05, Vol.23 (5), p.588-593

张士英修向前华雪梅谢自力刘斌陈鹏韩平陆海张荣郑有炓

2014

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Gallium Nitride Nanowires Grown by Hydride Vapor Phase Epitaxy

Chinese physics letters, 2011-05, Vol.28 (5), p.057804

2011

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Comparison study of GaN films grown on porous and planar GaN templates

Chinese physics B, 2020-02, Vol.29 (3), p.38103

2020

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High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

Chinese physics letters, 2013-07, Vol.30 (7), p.78502-1-078502-4

2013

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Roles of V/III ratio and mixture degree in GaN growth： CFD and MD simulation study

Chinese physics B, 2013, Vol.22 (1), p.513-517

周安修向前张荣谢自力华雪梅刘斌韩平顾书林施毅郑有炓

2013

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Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template

Chinese physics letters, 2012-09, Vol.29 (9), p.98502-1-098502-3

2012

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Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask

Chinese physics B, 2014-09, Vol.23 (9), p.327-330

陶涛智婷李民雪谢自力张荣刘斌李毅庄喆张国刚蒋府龙陈鹏郑有炓

2014

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Effect of Rapid Thermal Annealing on the Formation of In-N Clusters in Strained InGaNAs

Chinese physics letters, 2010-07, Vol.27 (7), p.077802-077802

2010

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Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate

Chinese physics letters, 2019-08, Vol.36 (8), p.88501

2019

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High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

Current transport mechanisms in Pt/Au Schottky contacts to AlInGaN using AlGaN/InGaN short-period superlattices

Design and implementation of a home embedded surveillance system with ultra-low alert power

Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstrating FT/Fmax of 350/532 GHz

Properties of a CdZnO/ZnO multiple quantum-well light-emitting diode

Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs

Intelligent Identification of Chinese and Australian Merino Wool Fibers Based on Image Recognition

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

Effects of V/III ratio on the growth of a-plane GaN films

Study on the self-absorption of InGaN quantum wells at high photon density

Properties of an AlGaN/AlN distributed-Bragg-reflector structure

Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted–molecular beam epitaxy

Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells

Growth and properties of wide spectral white light emitting diodes

The Formation and Characterization of GaN Hexagonal Pyramids

Synthesis and Growth Mechanism： A Novel Fishing Rod-Shaped GaN Nanorods

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

Gallium Nitride Nanowires Grown by Hydride Vapor Phase Epitaxy

Comparison study of GaN films grown on porous and planar GaN templates

High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

Roles of V/III ratio and mixture degree in GaN growth： CFD and MD simulation study

Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template

Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask

Effect of Rapid Thermal Annealing on the Formation of In-N Clusters in Strained InGaNAs

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate

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