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A wideband bandpass filter with wide upper stopband attenuation containing multiple resonators

Microwave and optical technology letters, 2023-10, Vol.65 (10), p.2741-2747

2023

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Analysis of interface trap charges on performance variation in L-shaped tunnel field-effect transistor

Micro & nano letters, 2019-09, Vol.14 (11), p.1140-1145

2019

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Impact of low/high-κ spacer–source overlap on characteristics of tunnel dielectric based tunnel field-effect transistor

Journal of Central South University, 2017-11, Vol.24 (11), p.2572-2581

2017

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Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

Chinese physics B, 2014-01, Vol.23 (1), p.18501

2014

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A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

Chinese physics B, 2014-03, Vol.23 (3), p.619-624

李聪庄奕琪张丽靳刚

2014

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Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric

Chinese physics B, 2018-07, Vol.27 (7), p.78502

2018

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Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

Chinese physics B, 2012-04, Vol.21 (4), p.48501-1-048501-7, Article 048501

2012

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A unified drain current 1/ f noise model for GaN-based high electron mobility transistors

Chinese physics B, 2014-02, Vol.23 (2), p.20701

2014

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Tax forecasting theory and model based on SVM optimized by PSO

Expert systems with applications, 2011-01, Vol.38 (1), p.116-120

2011

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Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Chinese physics B, 2016-02, Vol.25 (2), p.463-467

蒋智庄奕琪李聪王萍刘予琪

2016

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Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

Chinese physics B, 2010-03, Vol.19 (3), p.467-470, Article 037201

马中发张鹏吴勇李伟华庄奕琪杜磊

2010

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Distribution characteristic of p-channel metal-oxide-semiconductor negative bias temperature instability effect under process variations

Wuli xuebao, 2016-08, Vol.65 (16), p.168502

2016

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A new model for electromigration grain boundary noise based on free volume

Chinese physics B, 2010-09, Vol.19 (9), p.525-530

何亮杜磊庄奕琪陈华陈文豪李伟华孙鹏

2010

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Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal--Oxide--Semiconductor Field Effect Transistor with High-$\kappa$ Gate Dielectric and Tri-Material Gate Stack

Japanese Journal of Applied Physics, 2010-12, Vol.49 (12), p.124202-124202-6

2010

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Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model

Wuli xuebao, 2015-07, Vol.64 (13), p.136104

2015

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Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates

Chinese physics B, 2016-04, Vol.25 (4), p.261-267

赵启风庄奕琪包军林胡为

2016

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1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode

Wuli xuebao, 2013-07, Vol.62 (14), p.140703

2013

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Cost-effective VDMOS for PDP scan driver IC

2007 7th International Conference on ASIC, 2007, p.733-736

2007

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Analytical modeling for drain current of strained Si NMOSFET

Wuli xuebao, 2013-12, Vol.62 (23), p.237103

2013

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A D-BAND POWER AMPLIFIER WITH 30-GHZ BANDWIDTH AND 4.5-DBM PSAT FOR HIGH-SPEED COMMUNICATION SYSTEM

Electromagnetic waves (Cambridge, Mass.), 2010, Vol.107, p.161-178

2010

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Physical compact modeling for threshold voltage of strained Si NMOSFET

Wuli xuebao, 2013-04, Vol.62 (7), p.77103

2013

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An On-Chip Monitor for Hot Carrier Induced Degradation

2007 7th International Conference on ASIC, 2007, p.1002-1005

2007

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Design of Microstrip Vertical Transition in Multilayered Printed Circuit Board for Ultra Wide-band Communication: Design of Microstrip Vertical Transition in Multilayered Printed Circuit Board for Ultra Wide-band Communication

Dian zi yu xin xi xue bao = Journal of electronics & information technology, 2012-08, Vol.34 (6), p.1483-1488

2012

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Research on Tactical Communication Simulation Training Federation Development

Key engineering materials, 2010-01, Vol.439-440, p.475-480

2010

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A Kind of Hierarchical K-Means Web Log Clustering Algorithm

Key engineering materials, 2010-01, Vol.439-440, p.481-485

2010

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A wideband bandpass filter with wide upper stopband attenuation containing multiple resonators

Analysis of interface trap charges on performance variation in L-shaped tunnel field-effect transistor

Impact of low/high-κ spacer–source overlap on characteristics of tunnel dielectric based tunnel field-effect transistor

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

A unified drain current 1/ f noise model for GaN-based high electron mobility transistors

Tax forecasting theory and model based on SVM optimized by PSO

Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

Distribution characteristic of p-channel metal-oxide-semiconductor negative bias temperature instability effect under process variations

A new model for electromigration grain boundary noise based on free volume

Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal--Oxide--Semiconductor Field Effect Transistor with High-$\kappa$ Gate Dielectric and Tri-Material Gate Stack

Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model

Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates

1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode

Cost-effective VDMOS for PDP scan driver IC

Analytical modeling for drain current of strained Si NMOSFET

A D-BAND POWER AMPLIFIER WITH 30-GHZ BANDWIDTH AND 4.5-DBM PSAT FOR HIGH-SPEED COMMUNICATION SYSTEM

Physical compact modeling for threshold voltage of strained Si NMOSFET

An On-Chip Monitor for Hot Carrier Induced Degradation

Design of Microstrip Vertical Transition in Multilayered Printed Circuit Board for Ultra Wide-band Communication: Design of Microstrip Vertical Transition in Multilayered Printed Circuit Board for Ultra Wide-band Communication

Research on Tactical Communication Simulation Training Federation Development

A Kind of Hierarchical K-Means Web Log Clustering Algorithm

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