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Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing

NPJ 2D materials and applications, 2022-01, Vol.6 (1), p.1-10, Article 8

2022

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Electroforming in Metal-Oxide Memristive Synapses

ACS applied materials & interfaces, 2020-03, Vol.12 (10), p.11806-11814

2020

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Characterizing ABS–copper chemistry-dependent adhesion: From the atomic to macro level

Journal of materials research and technology, 2024-03, Vol.29, p.4384-4393

2024

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On the Limits of Scanning Thermal Microscopy of Ultrathin Films

Materials, 2020-01, Vol.13 (3), p.518

2020

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Memristors with Initial Low‐Resistive State for Efficient Neuromorphic Systems

Advanced intelligent systems, 2022-08, Vol.4 (8), p.n/a

2022

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Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect

Advanced materials (Weinheim), 2021-10, Vol.33 (41), p.e2103656-n/a

2021

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Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

Advanced functional materials, 2021-07, Vol.31 (27), p.n/a

2021

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All-2D materials-based 1T1M cells with threshold switching for electronic neurons

Microelectronic engineering, 2024-11, Vol.294, p.112247, Article 112247

2024

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The development of integrated circuits based on two-dimensional materials

Nature electronics, 2021-11, Vol.4 (11), p.775-785

2021

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Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology

Advanced materials (Weinheim), 2022-12, Vol.34 (48), p.e2104138-n/a

2022

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Hybrid 2D–CMOS microchips for memristive applications

Nature (London), 2023-06, Vol.618 (7963), p.57-62

2023

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Integration of Ag-based threshold switching devices in silicon microchips

Materials science & engineering. R, Reports : a review journal, 2024-12, Vol.161, p.100837, Article 100837

2024

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Graphene–Boron Nitride–Graphene Cross-Point Memristors with Three Stable Resistive States

ACS applied materials & interfaces, 2019-10, Vol.11 (41), p.37999-38005

2019

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Advanced Data Encryption using 2D Materials

Advanced materials (Weinheim), 2021-07, Vol.33 (27), p.e2100185-n/a

2021

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High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Advanced functional materials, 2024-04, Vol.34 (15), p.n/a

2024

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An Electrical Model for Trap Coupling Effects on Random Telegraph Noise

IEEE electron device letters, 2020-10, Vol.41 (10), p.1596-1599

2020

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Fully 2D Materials‐Based Resistive Switching Circuits for Advanced Data Encryption

Advanced functional materials, 2024-06, Vol.34 (41), p.n/a

2024

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The origin and mitigation of defects induced by metal evaporation in 2D materials

Materials science & engineering. R, Reports : a review journal, 2024-09, Vol.160, p.100831, Article 100831

2024

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Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient

ACS applied materials & interfaces, 2023-04, Vol.15 (15), p.19102-19110

2023

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28.2%-efficient, outdoor-stable perovskite/silicon tandem solar cell

Joule, 2021-12, Vol.5 (12), p.3169-3186

2021

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Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller

Nanoscale, 2023-02, Vol.15 (5), p.2171-218

2023

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Inkjet Printing: A Cheap and Easy‐to‐Use Alternative to Wire Bonding for Academics

Crystal research and technology (1979), 2022-03, Vol.57 (3), p.n/a

2022

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Solution-processed memristors: performance and reliability

Nature reviews. Materials, 2024-05, Vol.9 (5), p.358-373

2024

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Inkjet-printed h-BN memristors for hardware security

Nanoscale, 2023-06, Vol.15 (23), p.9985-9992

2023

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Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing

Electroforming in Metal-Oxide Memristive Synapses

Characterizing ABS–copper chemistry-dependent adhesion: From the atomic to macro level

On the Limits of Scanning Thermal Microscopy of Ultrathin Films

Memristors with Initial Low‐Resistive State for Efficient Neuromorphic Systems

Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect

Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

All-2D materials-based 1T1M cells with threshold switching for electronic neurons

The development of integrated circuits based on two-dimensional materials

Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology

Hybrid 2D–CMOS microchips for memristive applications

Integration of Ag-based threshold switching devices in silicon microchips

Graphene–Boron Nitride–Graphene Cross-Point Memristors with Three Stable Resistive States

Standards for the Characterization of Endurance in Resistive Switching Devices

Advanced Data Encryption using 2D Materials

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

An Electrical Model for Trap Coupling Effects on Random Telegraph Noise

Fully 2D Materials‐Based Resistive Switching Circuits for Advanced Data Encryption

The origin and mitigation of defects induced by metal evaporation in 2D materials

Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient

28.2%-efficient, outdoor-stable perovskite/silicon tandem solar cell

Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller

Inkjet Printing: A Cheap and Easy‐to‐Use Alternative to Wire Bonding for Academics

Solution-processed memristors: performance and reliability

Inkjet-printed h-BN memristors for hardware security

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