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Fault Diagnosis of Steel Wire Ropes Based on Magnetic Flux Leakage Imaging Under Strong Shaking and Strand Noises

IEEE transactions on industrial electronics (1982), 2021-03, Vol.68 (3), p.2543-2553

2021

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Thin film ferroelectric photonic-electronic memory

Light, science & applications, 2024-08, Vol.13 (1), p.206-12

2024

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Inversion-Type Ferroelectric Capacitive Memory and Its 1-Kbit Crossbar Array

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1641-1647

2023

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Investigation of Charge Trapping Aggravation Induced by Antiferroelectric Switching With a Unified Ferroelectric and Antiferroelectric Model

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4445-4452

2024

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Demonstration of Ferroelectricity in Al-Doped HfO₂ With a Low Thermal Budget of 500 °C

IEEE electron device letters, 2020-07, Vol.41 (7), p.1130-1133

2020

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A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film

IEEE electron device letters, 2020-12, Vol.41 (12), p.1837-1840

2020

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Comprehensive Experiments and Modeling Applicable for Ferroelectric Transistors With an MFMIS Structure and a Wide Range of Area Ratios: Unveiling the Operation Mechanisms

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5332-5338

2024

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A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm−3

Journal of physics. D, Applied physics, 2022-01, Vol.55 (1), p.14003

2022

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Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs

IEEE electron device letters, 2021-10, Vol.42 (10), p.1488-1491

2021

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Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5425-5431

2024

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BEOL-Compatible MFMIS Ferroelectric/ Anti-ferroelectric FETs-Part II: Mechanism With Load Line Analysis and Scaling Strategy

IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5325-5331

2024

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BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs-Part I: Experimental Results With Boosted Memory Window

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1827-1833

2024

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Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High Pr of 23.7 μC/cm2

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5633-5638

2020

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Temperature Dependence of Ferroelectricity in Al-Doped HfO 2 Featuring a High P r of 23.7 μC/cm 2

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5633-5638

2020

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Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics

IEEE electron device letters, 2022-01, Vol.43 (1), p.158-161

2022

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Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High P r of 23.7 μC/cm2

IEEE transactions on electron devices, 2020-01, Vol.67 (12), p.5633

2020

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Advancing the Understanding of Reliability in BEOL-Compatible Oxide Semiconductor Transistors: The Impact of AC PBTI

IEEE transactions on electron devices, 2024-10, p.1-7

2024

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Hydrogen-Related Instability of IGZO Field-Effect Transistors

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.2995-3001

2024

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Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2059-2066

2023

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Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6665-6672

2023

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A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlO ₓ Ferroelectric Film

IEEE electron device letters, 2020-12, Vol.41 (12), p.1837-1840

2020

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First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.357-358

2022

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First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory

2023 International Conference on IC Design and Technology (ICICDT), 2023, p.29-33

2023

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Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Advanced electronic materials, 2022-12, Vol.8 (12), p.n/a

2022

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Fault Diagnosis of Steel Wire Ropes Based on Magnetic Flux Leakage Imaging Under Strong Shaking and Strand Noises

Thin film ferroelectric photonic-electronic memory

Inversion-Type Ferroelectric Capacitive Memory and Its 1-Kbit Crossbar Array

Investigation of Charge Trapping Aggravation Induced by Antiferroelectric Switching With a Unified Ferroelectric and Antiferroelectric Model

Demonstration of Ferroelectricity in Al-Doped HfO₂ With a Low Thermal Budget of 500 °C

A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film

Comprehensive Experiments and Modeling Applicable for Ferroelectric Transistors With an MFMIS Structure and a Wide Range of Area Ratios: Unveiling the Operation Mechanisms

A 6.5 nm thick anti-ferroelectric HfAlO x film for energy storage devices with a high density of 63.7 J cm−3

Back-End-of-Line Compatible Fully Depleted CMOS Inverters Employing Ge p-FETs and α-InGaZnO n-FETs

Discovering the Impact of Cooling Scheme During Annealing: A New Knob for Achieving Thermally Stable IGZO FETs

BEOL-Compatible MFMIS Ferroelectric/ Anti-ferroelectric FETs-Part II: Mechanism With Load Line Analysis and Scaling Strategy

BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs-Part I: Experimental Results With Boosted Memory Window

Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High Pr of 23.7 μC/cm2

Temperature Dependence of Ferroelectricity in Al-Doped HfO 2 Featuring a High P r of 23.7 μC/cm 2

Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics

Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High P r of 23.7 μC/cm2

Advancing the Understanding of Reliability in BEOL-Compatible Oxide Semiconductor Transistors: The Impact of AC PBTI

Hydrogen-Related Instability of IGZO Field-Effect Transistors

Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors

Grain Size Reduction of Ferroelectric HZO Enabled by Solid Phase Epitaxy (SPE): Working Principle, Experimental Demonstration, and Theoretical Understanding

A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlO ₓ Ferroelectric Film

First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack

Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention

First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

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