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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Electronics (Basel), 2018-12, Vol.7 (12), p.377

2018

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Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs

AIP advances, 2021-04, Vol.11 (4), p.045207-045207-6

2021

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Graphene/epoxy interleaves for delamination toughening and monitoring of crack damage in carbon fibre/epoxy composite laminates

Composites science and technology, 2017-03, Vol.140, p.123-133

2017

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Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.875-880

2020

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Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1518-1523

2021

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Transport and Organization of Cholesterol in a Planar Solid-Supported Lipid Bilayer Depend on the Phospholipid Flip-Flop Rate

Langmuir, 2016-11, Vol.32 (44), p.11681-11689

2016

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Application of a gateless AlGaN/GaN HEMT sensor for diesel soot particulate detection

Sensors and actuators. B, Chemical, 2021-12, Vol.349, p.130811, Article 130811

2021

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p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2282-2286

2022

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Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process

IEEE electron device letters, 2022-04, Vol.43 (4), p.529-532

2022

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Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

IEEE electron device letters, 2022-04, Vol.43 (4), p.529-532

2022

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Carbon monoxide detection down to ppb-level realized by O2 plasma treated TiO2-gated AlGaN/GaN HEMT sensor

Sensors and actuators. B, Chemical, 2022-05, Vol.359, p.131556, Article 131556

2022

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Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer

Materials science in semiconductor processing, 2022-06, Vol.143, p.106544, Article 106544

2022

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Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiNx caps

Materials science in semiconductor processing, 2021-09, Vol.132, Article 105907

2021

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Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps

Materials science in semiconductor processing, 2021-09, Vol.132, p.105907, Article 105907

2021

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Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

Optical materials express, 2018-05, Vol.8 (5), p.1117

2018

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基于分布式光纤声场传感的预应力钢筒混凝土管断丝监测研究进展

Guangxué xuébào, 2024, Vol.44 (1), p.106006

2024

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Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

Optical materials express, 2020-01, Vol.10 (1), p.1

2020

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Analysis of Amorphous-to-crystalline Germanium Stack with Cs-corrected Analytical STEM

Microscopy and microanalysis, 2017-07, Vol.23 (S1), p.1514-1515

2017

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Oxygen-plasma-based digital etching for GaN/AlGaN high electron mobility transistors

2019 IEEE 13th International Conference on ASIC (ASICON), 2019, p.1-4

2019

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Reducing dynamic on-resistance of p-GaN gate HEMTs using dual field plate configurations

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2020, p.1-4

2020

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Technological Development in Pursuit of High-Performance Normally-off GaN-based HEMTs

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2020, p.1-5

2020

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Study on the Optimization of Off-State Breakdown Performance of p-GaN HEMTs

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020, p.1-4

2020

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Exposure of Equal-Channel Angular Extruded Tungsten to Deuterium Plasma

Plasma science & technology, 2015-07, Vol.17 (7), p.595-600

2015

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A coupled theory for deformation and phase transformation due to CMAS infiltration and corrosion of thermal barrier coatings

Corrosion science, 2021-09, Vol.190, p.109690, Article 109690

2021

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The p300/YY1/miR-500a-5p/HDAC2 signalling axis regulates cell proliferation in human colorectal cancer

Nature communications, 2019-02, Vol.10 (1), p.663-663, Article 663

2019

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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs

Graphene/epoxy interleaves for delamination toughening and monitoring of crack damage in carbon fibre/epoxy composite laminates

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements

Transport and Organization of Cholesterol in a Planar Solid-Supported Lipid Bilayer Depend on the Phospholipid Flip-Flop Rate

Application of a gateless AlGaN/GaN HEMT sensor for diesel soot particulate detection

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process

Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

Carbon monoxide detection down to ppb-level realized by O2 plasma treated TiO2-gated AlGaN/GaN HEMT sensor

Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer

Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiNx caps

Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps

Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

基于分布式光纤声场传感的预应力钢筒混凝土管断丝监测研究进展

Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

Analysis of Amorphous-to-crystalline Germanium Stack with Cs-corrected Analytical STEM

Oxygen-plasma-based digital etching for GaN/AlGaN high electron mobility transistors

Reducing dynamic on-resistance of p-GaN gate HEMTs using dual field plate configurations

Technological Development in Pursuit of High-Performance Normally-off GaN-based HEMTs

Study on the Optimization of Off-State Breakdown Performance of p-GaN HEMTs

Exposure of Equal-Channel Angular Extruded Tungsten to Deuterium Plasma

A coupled theory for deformation and phase transformation due to CMAS infiltration and corrosion of thermal barrier coatings

The p300/YY1/miR-500a-5p/HDAC2 signalling axis regulates cell proliferation in human colorectal cancer

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