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Few‐Hydrogen Metal‐Bonded Perovskite Superconductor MgHCu3 with a Critical Temperature of 42 K under Atmospheric Pressure

Advanced functional materials, 2024-03, Vol.34 (11), p.n/a

2024

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Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect

ACS nano, 2015-09, Vol.9 (9), p.9276-9283

2015

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Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation

New journal of physics, 2014-11, Vol.16 (11), p.113065

2014

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Silicene on substrates:A theoretical perspective

Chinese physics B, 2015-08, Vol.24 (8), p.87-98

钟红霞屈贺如歌王洋洋史俊杰吕劲

2015

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High-Accuracy Machine-Learned Interatomic Potentials for the Phase Change Material Ge3Sb6Te5

Chemistry of materials, 2023-09, Vol.35 (17), p.6651-6658

2023

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Metal-bonded perovskite lead hydride with phonon-mediated superconductivity exceeding 46 K under ambient pressure

Journal of physics. Condensed matter, 2024-05, Vol.36 (20)

2024

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Anomalous high ZT above 2.2 in light element dominated compound Li4OTe due to low thermal conductivity

Acta materialia, 2023-08, Vol.255, Article 119045

2023

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Improving p -type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ -codoping: Role of O-atom in GaN monolayer

AIP advances, 2015-01, Vol.5 (1), p.017114-017114-8

2015

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Anti-perovskite carbides Ca6CSe4 and Sr6CSe4 for photovoltaics with similar optoelectronic properties to MAPbI3

Journal of materials chemistry. A, Materials for energy and sustainability, 2022-09, Vol.10 (40), p.21540-21550

2022

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Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g‑C3N4, and g‑CN: Electric Field Effect

Journal of physical chemistry. C, 2016-05, Vol.120 (20), p.11299-11305

2016

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The Dion–Jacobson perovskite CsSbCl4: a promising Pb-free solar-cell absorber with optimal bandgap ∼1.4 eV, strong optical absorption ∼105 cm−1, and large power-conversion efficiency above 20

Journal of materials chemistry. A, Materials for energy and sustainability, 2021-08, Vol.9 (30), p.16436-16446

2021

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Layered Dion-Jacobson-Type Chalcogenide Perovskite CsLaM2X7 (M = Ta/Nb; X = S/Se) with a Narrow Band Gap of ∼1 eV as a Promising Rear Cell for All-Perovskite Tandem Solar Cells

ACS applied materials & interfaces, 2021-10, Vol.13 (41), p.48971-48980

2021

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Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure

The journal of physical chemistry letters, 2016-08, Vol.7 (15), p.2888-2892

2016

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Lead-free layered Aurivillius-type Sn-based halide perovskite Ba2X2[Csn−1SnnX3n+1] (X = I/Br/Cl) with an optimal band gap of ∼1.26 eV and theoretical efficiency beyond 27% for photovoltaics

Journal of materials chemistry. A, Materials for energy and sustainability, 2022-01, Vol.10 (19), p.10682-10691

2022

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Significant reduction of the lattice thermal conductivity in antifluorites via a split-anion approach

Physical review. B, 2023-05, Vol.107 (20), Article 205206

2023

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Modulation of electronic and optical properties of ZnO by inserting an ultrathin ZnX (X = S, Se and Te) layer to form short-period (ZnO)5/(ZnX)1 superlattice

Journal of alloys and compounds, 2017-07, Vol.711, p.581-591

2017

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Cerium-based lead-free chalcogenide perovskites for photovoltaics

Physical review. B, 2021-12, Vol.104 (23), Article 235206

2021

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Improvement of p-type conductivity in Al-rich AlGaN substituted by MgGaδ-doping (AlN)m/(GaN)n (m≥n) superlattice

Journal of alloys and compounds, 2016-11, Vol.686, p.484-488

2016

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Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

Scientific reports, 2014-10, Vol.4 (1), Article 6710

2014

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Breakthrough of the p-type doping bottleneck in ZnO by inserting an ultrathin ZnX (X = S, Se and Te) layer doped with NX or AgZn

Journal of physics. D, Applied physics, 2016-02, Vol.49 (9)

2016

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Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON, and 3ON–VAl Surface Defects

Journal of physical chemistry. C, 2015-09, Vol.119 (37), p.21688-21693

2015

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Improvement of n-type conductivity in hexagonal boron nitride monolayers by doping, strain and adsorption

RSC advances, 2016-01, Vol.6 (35), p.2919-29196

2016

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Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

Journal of physics. D, Applied physics, 2015-10, Vol.48 (47)

2015

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Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution

Journal of physical chemistry. C, 2013-08, Vol.117 (31), p.16231-16237

2013

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Investigation of dietary fiber intakes and varies in 53 patients with diabetes

Zhōnghuá yùfáng-yīxué zázhì, 2005-09, Vol.39 (5), p.342

2005

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Few‐Hydrogen Metal‐Bonded Perovskite Superconductor MgHCu3 with a Critical Temperature of 42 K under Atmospheric Pressure

Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect

Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation

Silicene on substrates:A theoretical perspective

High-Accuracy Machine-Learned Interatomic Potentials for the Phase Change Material Ge3Sb6Te5

Metal-bonded perovskite lead hydride with phonon-mediated superconductivity exceeding 46 K under ambient pressure

Anomalous high ZT above 2.2 in light element dominated compound Li4OTe due to low thermal conductivity

Improving p -type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON δ -codoping: Role of O-atom in GaN monolayer

Anti-perovskite carbides Ca6CSe4 and Sr6CSe4 for photovoltaics with similar optoelectronic properties to MAPbI3

Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g‑C3N4, and g‑CN: Electric Field Effect

The Dion–Jacobson perovskite CsSbCl4: a promising Pb-free solar-cell absorber with optimal bandgap ∼1.4 eV, strong optical absorption ∼105 cm−1, and large power-conversion efficiency above 20

Layered Dion-Jacobson-Type Chalcogenide Perovskite CsLaM2X7 (M = Ta/Nb; X = S/Se) with a Narrow Band Gap of ∼1 eV as a Promising Rear Cell for All-Perovskite Tandem Solar Cells

Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure

Lead-free layered Aurivillius-type Sn-based halide perovskite Ba2X2[Csn−1SnnX3n+1] (X = I/Br/Cl) with an optimal band gap of ∼1.26 eV and theoretical efficiency beyond 27% for photovoltaics

Significant reduction of the lattice thermal conductivity in antifluorites via a split-anion approach

Modulation of electronic and optical properties of ZnO by inserting an ultrathin ZnX (X = S, Se and Te) layer to form short-period (ZnO)5/(ZnX)1 superlattice

Cerium-based lead-free chalcogenide perovskites for photovoltaics

Improvement of p-type conductivity in Al-rich AlGaN substituted by MgGaδ-doping (AlN)m/(GaN)n (m≥n) superlattice

Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect

Breakthrough of the p-type doping bottleneck in ZnO by inserting an ultrathin ZnX (X = S, Se and Te) layer doped with NX or AgZn

Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON, and 3ON–VAl Surface Defects

Improvement of n-type conductivity in hexagonal boron nitride monolayers by doping, strain and adsorption

Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution

Investigation of dietary fiber intakes and varies in 53 patients with diabetes

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