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ZnSe and ZnCdSe/ZnSe Photodetectors for Visible Spectral Range: Comparative Parameters

Journal of communications technology & electronics, 2022-07, Vol.67 (7), p.911-917

2022

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Metal–Semiconductor–Metal–ZnS/GaP Detectors for the UV and Visible Spectrum with Electrically Tunable Spectral Photosensitivity

Journal of communications technology & electronics, 2023-09, Vol.68 (9), p.1009-1014

2023

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Narrowband MSM Detector of the Visible Part of the Spectrum Based on a ZnCdSe/ZnSSe/GaAs Heterostructure

Journal of communications technology & electronics, 2021-02, Vol.66 (2), p.202-205

2021

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Two-Color Photodetector for the Visible Spectral Range Based on ZnSe/ZnS/GaAs Bragg Reflector

Journal of communications technology & electronics, 2019-10, Vol.64 (10), p.1152-1155

2019

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Adsorption Activity of Chromium(VI) Ions on a Carbon Surface

Protection of metals and physical chemistry of surfaces, 2023-12, Vol.59 (6), p.1073-1077

2023

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MSM-photodetector with ZnSe/ZnS/GaAs Bragg reflector

Optical and quantum electronics, 2020-02, Vol.52 (2), Article 93

2020

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Multicolour photodetector based on a ZnSe/ZnTe/GaAs heterostructure

Quantum electronics (Woodbury, N.Y.), 2018-07, Vol.48 (7), p.675-678

2018

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Electrical, optical and spectral characteristics of type-II ZnSe/ZnTe/GaAs superlattice and MSM-photodetector on their base

Optical and quantum electronics, 2018-10, Vol.50 (10), p.1-8, Article 368

2018

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Pulse modulation of multicolored radiation of an argon laser

Journal of optical technology, 2020-07, Vol.87 (7), p.389

2020

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MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.249-253

2017

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A bicolor photodetector of ultraviolet radiation based on a low-dimensional ZnCdS/ZnMgS/GaP heterostructure

Journal of communications technology & electronics, 2015-04, Vol.60 (4), p.406-409

2015

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An ultraviolet MSM photodetector with electrically tunable spectral sensitivity

Journal of communications technology & electronics, 2013-03, Vol.58 (3), p.273-276

2013

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Nature and spatial localization of electroluminescence sources in the metal-composite layer-semiconductor structures

Journal of communications technology & electronics, 2012-04, Vol.57 (4), p.432-437

2012

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Metal–semiconductor–metal detectors ZnS/GaP for the ultraviolet and visible part of the spectrum with electrically tunable spectral photosensitivity

Радиотехника и электроника, 2023-09, Vol.68 (9), p.924-929

2023

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Solar-blind MSM-photodetectors based on AlxGa1−xN/GaN heterostructures grown by MOCVD

Solid-state electronics, 2008-05, Vol.52 (5), p.618-624

2008

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Electrically tunable spectral responsivity in metal–semiconductor–metal photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaP heterostructures

Solid-state electronics, 2015-12, Vol.114, p.135-140

2015

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Wavelength selective UV/visible metal-semiconductor-metal photodetectors

Optical and quantum electronics, 2016-05, Vol.48 (5), Article 303

2016

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Selective UV radiation detection on the basis of low-dimensional ZnCdS/ZnMgS/GaP and ZnCdS/ZnS/GaP heterostructures

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1393-1399

2015

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Deposition of heteroepitaxial layers of topological insulator Bi sub(2)Se sub(3) in the trimethylbismuth-isopropylselenide-hydrogen system on the (0001) Al sub(2)O sub(3) and (100) GaAs substrates

Journal of communications technology & electronics, 2016-02, Vol.61 (2), p.183-189

2016

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Deposition of heteroepitaxial layers of topological insulator Bi2Se3 in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al2O3 and (100) GaAs substrates

Journal of communications technology & electronics, 2016-02, Vol.61 (2), p.183-189

2016

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Adsorption Activity of Chromium(VI) Ions on a Carbon Surface

Физикохимия поверхности и защита материалов, 2023-11, Vol.59 (6), p.571-576

2023

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Deposition of heteroepitaxial layers of topological insulator Bi^sub 2^Se^sub 3^ in the trimethylbismuth-isopropylselenide-hydrogen system on the (0001) Al^sub 2^O3 and (100) GaAs substrates

Journal of communications technology & electronics, 2016-02, Vol.61 (2), p.183

2016

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Metal-semiconductor-metal photodiodes based on ZnCdS/GaP wide-gap heterostructures

Technical physics, 2012-11, Vol.57 (11), p.1514-1518

2012

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AlN/AlGaN heterostructures for selective ultraviolet MSM detectors

Technical physics, 2011-02, Vol.56 (2), p.295-297

2011

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Solar-blind MSM-photodetectors based on AlxGa1-xN/GaN heterostructures grown by MOCVD

Solid-state electronics, 2008, Vol.52 (5), p.618-624

2008

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ZnSe and ZnCdSe/ZnSe Photodetectors for Visible Spectral Range: Comparative Parameters

Metal–Semiconductor–Metal–ZnS/GaP Detectors for the UV and Visible Spectrum with Electrically Tunable Spectral Photosensitivity

Narrowband MSM Detector of the Visible Part of the Spectrum Based on a ZnCdSe/ZnSSe/GaAs Heterostructure

Two-Color Photodetector for the Visible Spectral Range Based on ZnSe/ZnS/GaAs Bragg Reflector

Adsorption Activity of Chromium(VI) Ions on a Carbon Surface

MSM-photodetector with ZnSe/ZnS/GaAs Bragg reflector

Multicolour photodetector based on a ZnSe/ZnTe/GaAs heterostructure

Electrical, optical and spectral characteristics of type-II ZnSe/ZnTe/GaAs superlattice and MSM-photodetector on their base

Pulse modulation of multicolored radiation of an argon laser

MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice

A bicolor photodetector of ultraviolet radiation based on a low-dimensional ZnCdS/ZnMgS/GaP heterostructure

An ultraviolet MSM photodetector with electrically tunable spectral sensitivity

Nature and spatial localization of electroluminescence sources in the metal-composite layer-semiconductor structures

Metal–semiconductor–metal detectors ZnS/GaP for the ultraviolet and visible part of the spectrum with electrically tunable spectral photosensitivity

Solar-blind MSM-photodetectors based on AlxGa1−xN/GaN heterostructures grown by MOCVD

Electrically tunable spectral responsivity in metal–semiconductor–metal photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaP heterostructures

Wavelength selective UV/visible metal-semiconductor-metal photodetectors

Selective UV radiation detection on the basis of low-dimensional ZnCdS/ZnMgS/GaP and ZnCdS/ZnS/GaP heterostructures

Deposition of heteroepitaxial layers of topological insulator Bi sub(2)Se sub(3) in the trimethylbismuth-isopropylselenide-hydrogen system on the (0001) Al sub(2)O sub(3) and (100) GaAs substrates

Deposition of heteroepitaxial layers of topological insulator Bi2Se3 in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al2O3 and (100) GaAs substrates

Adsorption Activity of Chromium(VI) Ions on a Carbon Surface

Deposition of heteroepitaxial layers of topological insulator Bi^sub 2^Se^sub 3^ in the trimethylbismuth-isopropylselenide-hydrogen system on the (0001) Al^sub 2^O3 and (100) GaAs substrates

Metal-semiconductor-metal photodiodes based on ZnCdS/GaP wide-gap heterostructures

AlN/AlGaN heterostructures for selective ultraviolet MSM detectors

Solar-blind MSM-photodetectors based on AlxGa1-xN/GaN heterostructures grown by MOCVD

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