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Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Science (American Association for the Advancement of Science), 2017-12, Vol.358 (6369), p.1423-1427

2017

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Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials

Nature communications, 2021-11, Vol.12 (1), p.6473-6473, Article 6473

2021

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Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

MRS bulletin, 2019-09, Vol.44 (9), p.715-720

2019

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Ultrahigh drive current and large selectivity in GeS selector

Nature communications, 2020-09, Vol.11 (1), p.4636-9, Article 4636

2020

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The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Nano research, 2022-02, Vol.15 (2), p.765-772

2022

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Improving the performance of phase-change memory by grain refinement

Journal of applied physics, 2020-08, Vol.128 (7)

2020

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Elemental electrical switch enabling phase segregation-free operation

Science (American Association for the Advancement of Science), 2021-12, Vol.374 (6573), p.1390-1394

2021

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In situ insight into temperature-dependent microstructure evolution of carbon doped phase change materials

Journal of applied physics, 2023-11, Vol.134 (20)

2023

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GeSe ovonic threshold switch: the impact of functional layer thickness and device size

Scientific reports, 2024-03, Vol.14 (1), p.6685-6685, Article 6685

2024

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Atomic insight into the BEOL thermal budget on phase transition of phase change memory cells

Applied physics letters, 2023-10, Vol.123 (16)

2023

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Y‑Doped Sb2Te3 Phase-Change Materials: Toward a Universal Memory

ACS applied materials & interfaces, 2020-05, Vol.12 (18), p.20672-20679

2020

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Phase-Change Memory Materials by Design: A Strain Engineering Approach

Advanced materials (Weinheim), 2016-04, Vol.28 (15), p.3007-3016

2016

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Ge2Sb2Te5/Sb superlattice-like thin film for high speed phase change memory application

Applied physics letters, 2015-12, Vol.107 (26)

2015

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Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina ( Al 2 O 3 ) Abrasive. Materials 2024, 17 , 679

Materials, 2024-07, Vol.17 (13), p.3295

2024

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Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina ( Al 2 O 3 ) Abrasive

Materials, 2024-01, Vol.17 (3), p.679

2024

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Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Applied physics letters, 2024-05, Vol.124 (20)

2024

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In-situ investigation on the crystallization property and microstructure evolution induced by thermal annealing and electron beam irradiation of titanium antimony thin film

Applied physics letters, 2019-07, Vol.115 (2)

2019

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A candidate Zr-doped Sb2Te alloy for phase change memory application

Applied physics letters, 2016-02, Vol.108 (5)

2016

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Realization of fast-speed and low-power phase change memory by optimizing Ge10Sb90 film with samarium doping

Applied physics letters, 2024-01, Vol.124 (1)

2024

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Understanding the switching mechanism of oxygen-doped Sb phase-change material: Insights from first principles

Journal of applied physics, 2022-09, Vol.132 (11)

2022

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High speed and high reliability phase transition via constrained crystallization in ultrathin a-C/Sb2Te multilayer nanostructures

Applied physics letters, 2023-11, Vol.123 (21)

2023

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Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

Applied physics letters, 2018-03, Vol.112 (13)

2018

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High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application

Applied physics letters, 2014-12, Vol.105 (24)

2014

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One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Nature communications, 2014-07, Vol.5 (1), p.4086-4086, Article 4086

2014

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Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials

Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

Ultrahigh drive current and large selectivity in GeS selector

The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Improving the performance of phase-change memory by grain refinement

Elemental electrical switch enabling phase segregation-free operation

In situ insight into temperature-dependent microstructure evolution of carbon doped phase change materials

GeSe ovonic threshold switch: the impact of functional layer thickness and device size

Atomic insight into the BEOL thermal budget on phase transition of phase change memory cells

Y‑Doped Sb2Te3 Phase-Change Materials: Toward a Universal Memory

Phase-Change Memory Materials by Design: A Strain Engineering Approach

Ge2Sb2Te5/Sb superlattice-like thin film for high speed phase change memory application

Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina ( Al 2 O 3 ) Abrasive. Materials 2024, 17 , 679

Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina ( Al 2 O 3 ) Abrasive

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

In-situ investigation on the crystallization property and microstructure evolution induced by thermal annealing and electron beam irradiation of titanium antimony thin film

A candidate Zr-doped Sb2Te alloy for phase change memory application

Realization of fast-speed and low-power phase change memory by optimizing Ge10Sb90 film with samarium doping

Understanding the switching mechanism of oxygen-doped Sb phase-change material: Insights from first principles

High speed and high reliability phase transition via constrained crystallization in ultrathin a-C/Sb2Te multilayer nanostructures

Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications

Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

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