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Physical model-based ArF photoresist formulation development

AIP advances, 2024-02, Vol.14 (2), p.025343-025343-13

2024

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High-rate synthesis of SiCN films using single-source silicon precursor with high-density helicon plasma

Vacuum, 2020-07, Vol.177, p.109397, Article 109397

2020

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Synthesis, characterization, and thermal properties of novel silicon 1,1,3,3‐tetramethylguanidinate derivatives and use as single‐source chemical vapor deposition precursors

Applied organometallic chemistry, 2020-02, Vol.34 (2), p.n/a

2020

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Preparation and Cationic Photopolymerization of Organic−Inorganic Hybrid Matrixes

Chemistry of materials, 1997-07, Vol.9 (7), p.1562-1569

1997

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Research of SMO process to improve the imaging capability of lithography system for 28nm node and beyond

2017 China Semiconductor Technology International Conference (CSTIC), 2017, p.1-3

2017

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Sub-resolution-assist-feature placement study to dense patterns in advanced lithography process

2016 China Semiconductor Technology International Conference (CSTIC), 2016, p.1-3

2016

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Illumination optimization for lithography tools ope matching at 28 nm nodes

2017 China Semiconductor Technology International Conference (CSTIC), 2017, p.1-4

2017

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Diffraction-based and image-based overlay evaluation for advanced technology node

2017 China Semiconductor Technology International Conference (CSTIC), 2017, p.1-4

2017

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Blob defect solution for 28 nm hole pattern in 193 nm topcoat-free immersion lithography

2017 China Semiconductor Technology International Conference (CSTIC), 2017, p.1-3

2017

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The problems and solutions in 40 nm node dual gate lithography process development

2015 China Semiconductor Technology International Conference, 2015, p.1-3

2015

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Challenges and solutions of 28nm poly etching

2017 China Semiconductor Technology International Conference (CSTIC), 2017, p.1-3

2017

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Metal layer OPC repair flow for 28NM node and beyond

2016 China Semiconductor Technology International Conference (CSTIC), 2016, p.1-3

2016

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Mask corner chopping effect in OPC modeling

2015 China Semiconductor Technology International Conference, 2015, p.1-3

2015

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Metal layer PWOPC solution for 28nm node and beyond

2015 China Semiconductor Technology International Conference, 2015, p.1-3

2015

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Sub resolution assist feature study in 28nm node poly lithographic process

2015 China Semiconductor Technology International Conference, 2015, p.1-3

2015

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Mask model analysis and its application in 28 OPC modeling

2015 China Semiconductor Technology International Conference, 2015, p.1-3

2015

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The optimization of overlay control for beyond sub-40nm lithography processes

2015 China Semiconductor Technology International Conference, 2015, p.1-3

2015

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Mask Bias optimization for NTD lithography process

2022 International Workshop on Advanced Patterning Solutions (IWAPS), 2022, p.1-3

2022

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Process Model Guided Photoresist Formulation Optimization

2021 International Workshop on Advanced Patterning Solutions (IWAPS), 2021, p.1-4

2021

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Photolithography solutions for fabrication of Fin and Poly-gate in 14nm FinFET devices

2015 China Semiconductor Technology International Conference, 2015, p.1-3

2015

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Catalytic hydrosilylation of organic esters using manganese carbonyl acetyl complexes

Journal of the American Chemical Society, 1995-10, Vol.117 (40), p.10139-10140

1995

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Investigation of A New Method to Weigh the Data Used for OPC Model Calibration

2020 International Workshop on Advanced Patterning Solutions (IWAPS), 2020, p.1-3

2020

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Synthesis of Novel Multifunctional Siloxane Oligomers Using Sol−Gel Techniques and Their Photoinitiated Cationic Polymerization

Chemistry of materials, 1997-07, Vol.9 (7), p.1554-1561

1997

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Manganese- and Rhodium-Catalyzed Phenylsilane Hydrosilation−Deoxygenation of Iron Acyl Complexes Cp(L)(CO)FeC(O)R (L = CO, PPh3, P(OMe)3, P(OPh)3; R = CH3, Ph, CHMe2, CMe3)

Organometallics, 1998-05, Vol.17 (10), p.1993-2002

1998

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Manganese- and Rhodium-Catalyzed Phenylsilane Hydrosilation−Deoxygenation of Iron Acyl Complexes Cp(L)(CO)FeC(O)R (L = CO, PPh 3 , P(OMe) 3 , P(OPh) 3 ; R = CH 3 , Ph, CHMe 2 , CMe 3 )

Organometallics, 1998-05, Vol.17 (10), p.1993-2002

1998

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Physical model-based ArF photoresist formulation development

High-rate synthesis of SiCN films using single-source silicon precursor with high-density helicon plasma

Synthesis, characterization, and thermal properties of novel silicon 1,1,3,3‐tetramethylguanidinate derivatives and use as single‐source chemical vapor deposition precursors

Preparation and Cationic Photopolymerization of Organic−Inorganic Hybrid Matrixes

Research of SMO process to improve the imaging capability of lithography system for 28nm node and beyond

Sub-resolution-assist-feature placement study to dense patterns in advanced lithography process

Illumination optimization for lithography tools ope matching at 28 nm nodes

Diffraction-based and image-based overlay evaluation for advanced technology node

Blob defect solution for 28 nm hole pattern in 193 nm topcoat-free immersion lithography

The problems and solutions in 40 nm node dual gate lithography process development

Challenges and solutions of 28nm poly etching

Metal layer OPC repair flow for 28NM node and beyond

Mask corner chopping effect in OPC modeling

Metal layer PWOPC solution for 28nm node and beyond

Sub resolution assist feature study in 28nm node poly lithographic process

Mask model analysis and its application in 28 OPC modeling

The optimization of overlay control for beyond sub-40nm lithography processes

Mask Bias optimization for NTD lithography process

Process Model Guided Photoresist Formulation Optimization

Photolithography solutions for fabrication of Fin and Poly-gate in 14nm FinFET devices

Catalytic hydrosilylation of organic esters using manganese carbonyl acetyl complexes

Investigation of A New Method to Weigh the Data Used for OPC Model Calibration

Synthesis of Novel Multifunctional Siloxane Oligomers Using Sol−Gel Techniques and Their Photoinitiated Cationic Polymerization

Manganese- and Rhodium-Catalyzed Phenylsilane Hydrosilation−Deoxygenation of Iron Acyl Complexes Cp(L)(CO)FeC(O)R (L = CO, PPh3, P(OMe)3, P(OPh)3; R = CH3, Ph, CHMe2, CMe3)

Manganese- and Rhodium-Catalyzed Phenylsilane Hydrosilation−Deoxygenation of Iron Acyl Complexes Cp(L)(CO)FeC(O)R (L = CO, PPh 3 , P(OMe) 3 , P(OPh) 3 ; R = CH 3 , Ph, CHMe 2 , CMe 3 )

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