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WN coating of TiN electrode to improve the reliability of phase change memory

Materials science in semiconductor processing, 2022-02, Vol.138, p.106273, Article 106273

2022

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Effect of Mo doping on phase change performance of Sb2Te3

中国物理B（英文版）, 2021-08, Vol.30 (8), p.500-504

2021

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Mechanism of titanium–nitride chemical mechanical polishing

Chinese physics B, 2021-02, Vol.30 (2), p.28301-628

2021

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Synthesis of colloid silica coated with ceria nano-particles with the assistance of PVP

Chinese chemical letters, 2015-06, Vol.26 (6), p.700-704

2015

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Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory

IEEE electron device letters, 2011-08, Vol.32 (8), p.1014-1016

2011

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Local structural characteristics of Sb2Te3 films studied by reverse Monte Carlo modeling

Nuclear science and techniques, 2017-03, Vol.28 (3), p.91-96, Article 38

2017

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Investigation of the effect of blade electrode width on performance of phase change memory

Semiconductor science and technology, 2021-10, Vol.36 (10), p.105003

2021

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A Compact Spice Model with Verilog-A for Phase Change Memory

Chinese physics letters, 2011, Vol.28 (1), p.212-214

2011

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Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire

Chinese physics letters, 2015-08, Vol.32 (8), p.181-184

闫未霞张泽芳郭晓慧刘卫丽宋志棠

2015

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Defect Engineering in Antimony Telluride Phase-Change Materials

Materials science forum, 2019-01, Vol.944, p.607-612

2019

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Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays

Chinese physics letters, 2015-06, Vol.32 (6), p.184-187

范茜陈后鹏王倩王月青吕士龙刘燕宋志棠冯高明刘波

2015

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Optimization of driving current and crosstalk effect in epitaxial diode array for phase change memory application

Semiconductor science and technology, 2020-11, Vol.35 (11), p.115001

2020

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Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

Chinese physics letters, 2010-06, Vol.27 (6), p.250-253, Article 068501

2010

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Chemical mechanical polishing of Ge2Sb2Te5 in alkaline slurry

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-07, Vol.35 (4)

2017

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An Improvement of the Thermal Stability of SnTe through Nitrogen Doping

Chinese physics letters, 2013-03, Vol.30 (3), p.37401-1-037401-4, Article 037401

2013

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High performance of multilevel-cell phase change memory device with good endurance reliability

Semiconductor science and technology, 2019-10, Vol.34 (10), p.105019

2019

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Thermal effect of Ge2Sb2Te5 in phase change memory device

中国物理B：英文版, 2014-08 (8), p.121-124

Li Jun-Tao Liu Bo Song Zhi-Tang Ren Kun Zhu Min Xu Jia Ren Jia-Dong Feng Gao-Ming Ren Wan-Chun Tong Hao

2014

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Fast switching and low drift of TiSbTe thin films for phase change memory applications

Materials science in semiconductor processing, 2019-03, Vol.91, p.399-403

2019

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Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

Thin solid films, 2005-12, Vol.492 (1), p.203-206

2005

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Carbon-Doped Sb-Rich Ge-Sb-Te Phase Change Material for High Speed and High Thermal Stability Phase Change Memory Applications

Materials science forum, 2017-06, Vol.898, p.1834-1838

2017

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Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling

Chinese physics letters, 2008-09, Vol.25 (9), p.3455-3458

2008

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Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials

Chinese physics letters, 2010-08, Vol.27 (8), p.246-249

龚岳峰宋志棠凌云刘燕李宜瑾封松林

2010

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Synthesis of crystalline cerium dioxide hydrosol by a sol–gel method

Ceramics international, 2012, Vol.38, p.S501-S504

2012

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An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector

Chinese physics letters, 2012-03, Vol.29 (3), p.38104-1-038104-4

2012

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Stability of Sb2Te Crystalline Films for Phase Change Memory

Materials science forum, 2017-06, Vol.898, p.1829-1833

2017

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WN coating of TiN electrode to improve the reliability of phase change memory

Effect of Mo doping on phase change performance of Sb2Te3

Mechanism of titanium–nitride chemical mechanical polishing

Synthesis of colloid silica coated with ceria nano-particles with the assistance of PVP

Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory

Local structural characteristics of Sb2Te3 films studied by reverse Monte Carlo modeling

Investigation of the effect of blade electrode width on performance of phase change memory

A Compact Spice Model with Verilog-A for Phase Change Memory

Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire

Defect Engineering in Antimony Telluride Phase-Change Materials

Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays

Optimization of driving current and crosstalk effect in epitaxial diode array for phase change memory application

Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

Chemical mechanical polishing of Ge2Sb2Te5 in alkaline slurry

An Improvement of the Thermal Stability of SnTe through Nitrogen Doping

High performance of multilevel-cell phase change memory device with good endurance reliability

Thermal effect of Ge2Sb2Te5 in phase change memory device

Fast switching and low drift of TiSbTe thin films for phase change memory applications

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

Carbon-Doped Sb-Rich Ge-Sb-Te Phase Change Material for High Speed and High Thermal Stability Phase Change Memory Applications

Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling

Three-Dimensional Finite Element Simulations for the Thermal Characteristics of PCRAMs with Different Buffer Layer Materials

Synthesis of crystalline cerium dioxide hydrosol by a sol–gel method

An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector

Stability of Sb2Te Crystalline Films for Phase Change Memory

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