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High‐Contrast SEM Imaging of Supported Few‐Layer Graphene for Differentiating Distinct Layers and Resolving Fine Features: There is Plenty of Room at the Bottom

Small (Weinheim an der Bergstrasse, Germany), 2018-05, Vol.14 (22), p.e1704190-n/a

2018

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Broadband composite pulse for quantum sensing with a solid-state spin in diamond

Applied physics letters, 2022-05, Vol.120 (19)

2022

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Twinkling graphene on polycrystalline Cu substrate: A scanning electron microscopy study

Journal of applied physics, 2019-05, Vol.125 (19)

2019

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Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes

Chinese physics B, 2023-03, Vol.32 (3), p.38502-670

2023

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Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment

Chinese physics B, 2021-02, Vol.30 (2), p.28502-640

2021

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Comparison of Composition and Diversity of Bacterial Microbiome in Human Upper and Lower Respiratory Tract

Chinese medical journal, 2017-05, Vol.130 (9), p.1122-1124

2017

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Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen

International journal of minerals, metallurgy and materials, 2017-07, Vol.24 (7), p.850-856

2017

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Study of Sericite Quartz Schist Coarse-Grained Soil by Large-Scale Triaxial Shear Tests

Frontiers in physics, 2020-11, Vol.8

2020

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High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

Chinese physics letters, 2015-11, Vol.32 (11), p.118501-118501

2015

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Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

Chinese physics letters, 2011-07, Vol.28 (7), p.78401-1-078401-4

2011

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Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2016-12, Vol.30 (35), p.1650411

2016

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650 mW/mm output power density of H-terminated polycrystalline diamond MISFET at 10 GHz

Electronics letters, 2020-03, Vol.56 (7), p.334-335

2020

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Development and application of a rapid rehabilitation system for reconstruction of maxillofacial soft-tissue defects related to war and traumatic injuries

Military medical research, 2014-01, Vol.1 (1), p.11

2014

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Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

Chinese physics letters, 2015-11, Vol.32 (11), p.118-121

何泽召杨克武蔚翠李佳刘庆彬芦伟立冯志红蔡树军

2015

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Ti/Al Based Ohmic Contact to As-Grown N-Polar GaN

Chinese physics letters, 2015-08, Vol.32 (8), p.132-134

冯志红王现彬王丽吕元杰房玉龙敦少博赵正平

2015

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Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells

Chinese physics B, 2015-02, Vol.24 (2), p.237-241

王强冀子武王帆牟奇郑雨军徐现刚吕元杰冯志红

2015

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Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

Chinese physics B, 2015-11, Vol.24 (11), p.406-409

杨铭林兆军赵景涛王玉堂李志远吕元杰冯志红

2015

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Removal pathway quantification and co-metabolic mechanism evaluation of alkylphenols from synthetic wastewater by phenolic root exudates in the rhizosphere of Phragmites australis

Journal of hazardous materials, 2022-02, Vol.424 (Pt A), p.127269-127269, Article 127269

2022

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Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

Chinese physics B, 2013-05, Vol.22 (5), p.57105-1-057105-4

2013

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Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

Chinese physics B, 2015-04, Vol.24 (4), p.048503-1-048503-5

2015

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The use of platelet-rich fibrin combined with periodontal ligament and jaw bone mesenchymal stem cell sheets for periodontal tissue engineering

Scientific reports, 2016-06, Vol.6 (1), p.28126-28126, Article 28126

2016

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Effects of GaN cap layer thickness on an AlN/GaN heterostructure

Chinese physics B, 2014-12, Vol.23 (12), p.127104-1-127104-4

2014

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High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

Chinese physics letters, 2015-03, Vol.32 (3), p.117-120

房玉龙冯志红李成明宋旭波尹甲运周幸叶王元刚吕元杰蔡树军

2015

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Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching

Chinese physics letters, 2014-08, Vol.31 (8), p.163-166

王强冀子武肖洪地吕海燕李建飞徐现刚吕元杰冯志红

2014

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Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

Chinese physics B, 2015-12, Vol.24 (12), p.346-351

吕海燕牟奇张磊吕元杰冀子武冯志红徐现刚郭其新

2015

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High‐Contrast SEM Imaging of Supported Few‐Layer Graphene for Differentiating Distinct Layers and Resolving Fine Features: There is Plenty of Room at the Bottom

Broadband composite pulse for quantum sensing with a solid-state spin in diamond

Twinkling graphene on polycrystalline Cu substrate: A scanning electron microscopy study

Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes

Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment

Comparison of Composition and Diversity of Bacterial Microbiome in Human Upper and Lower Respiratory Tract

Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen

Study of Sericite Quartz Schist Coarse-Grained Soil by Large-Scale Triaxial Shear Tests

High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors

650 mW/mm output power density of H-terminated polycrystalline diamond MISFET at 10 GHz

Development and application of a rapid rehabilitation system for reconstruction of maxillofacial soft-tissue defects related to war and traumatic injuries

Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

Ti/Al Based Ohmic Contact to As-Grown N-Polar GaN

Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

Removal pathway quantification and co-metabolic mechanism evaluation of alkylphenols from synthetic wastewater by phenolic root exudates in the rhizosphere of Phragmites australis

Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

The use of platelet-rich fibrin combined with periodontal ligament and jaw bone mesenchymal stem cell sheets for periodontal tissue engineering

Effects of GaN cap layer thickness on an AlN/GaN heterostructure

High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

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