UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 615

Sortiert nach

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Light, science & applications, 2021-04, Vol.10 (1), p.94-94, Article 94

2021

Volltextzugriff (PDF)

Do all screw dislocations cause leakage in GaN-based devices?

Applied physics letters, 2020-02, Vol.116 (6)

2020

Volltextzugriff (PDF)

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

Nature nanotechnology, 2021-11, Vol.16 (11), p.1231-1236

2021

Volltextzugriff (PDF)

An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

Nature communications, 2023-07, Vol.14 (1), p.4459-4459, Article 4459

2023

Volltextzugriff (PDF)

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

Applied physics letters, 2024-06, Vol.124 (23)

2024

Volltextzugriff (PDF)

Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Applied physics letters, 2024-04, Vol.124 (17)

2024

Volltextzugriff (PDF)

Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3

Applied physics letters, 2024-04, Vol.124 (15)

2024

Volltextzugriff (PDF)

High Sensitivity and Selectivity of AsP Sensor in Detecting SF6 Decomposition Gases

Scientific reports, 2018-08, Vol.8 (1), p.1-6, Article 12011

2018

Volltextzugriff (PDF)

Design of a quantum-spin sensor with sub-micron resolution and enhanced optical read-out ability by the nitrogen-vacancy centers in diamond

Journal of materials research, 2023-11, Vol.38 (22), p.4819-4827

2023

Volltextzugriff (PDF)

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-10, Vol.97 (15)

2010

Volltextzugriff (PDF)

Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure

Applied physics letters, 2023-09, Vol.123 (12)

2023

Volltextzugriff (PDF)

RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs

Applied physics letters, 2022-08, Vol.121 (7)

2022

Volltextzugriff (PDF)

Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

Applied physics letters, 2013-05, Vol.102 (19)

2013

Volltextzugriff (PDF)

Speed up Ferroelectric Organic Transistor Memories by Using Two-Dimensional Molecular Crystalline Semiconductors

ACS applied materials & interfaces, 2017-05, Vol.9 (21), p.18127-18133

2017

Volltextzugriff (PDF)

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Applied physics letters, 2023-04, Vol.122 (14)

2023

Volltextzugriff (PDF)

Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

Applied physics letters, 2012-06, Vol.100 (24), p.243505

2012

Volltextzugriff (PDF)

Forward tunneling current in GaN-based blue light-emitting diodes

Applied physics letters, 2010-02, Vol.96 (8), p.083504-083504-3

2010

Volltextzugriff (PDF)

Effects of indium doping on the crystallographic, morphological, electrical, and optical properties of highly crystalline ZnO films

Journal of alloys and compounds, 2015-12, Vol.653, p.643-648

2015

Volltextzugriff (PDF)

Property manipulation through pulsed laser annealing in high dose Mg-implanted GaN

Journal of applied physics, 2020-12, Vol.128 (23)

2020

Volltextzugriff (PDF)

Charge transfer dynamics of the CdTe quantum dots fluorescence quenching induced by ferrous (II) ions

Applied physics letters, 2020-01, Vol.116 (1)

2020

Volltextzugriff (PDF)

Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Applied physics letters, 2015-08, Vol.107 (5)

2015

Volltextzugriff (PDF)

Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

The journal of physical chemistry letters, 2018-03, Vol.9 (6), p.1318-1323

2018

Volltextzugriff (PDF)

High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes

IEEE photonics technology letters, 2014-06, Vol.26 (11), p.1136-1138

2014

Volltextzugriff (PDF)

Analysis of Dark Count Mechanisms of 4H-SiC Ultraviolet Avalanche Photodiodes Working in Geiger Mode

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4532-4539

2017

Volltextzugriff (PDF)

M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes

Scientific reports, 2023-07, Vol.13 (1), p.11394-11394, Article 11394

2023

Volltextzugriff (PDF)

1 – 25 von 615

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(508)
Mit Volltextzugriff
(587)

Publikationsform

Artikel
(572)
Tagungsberichte
(43)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(433)
Physical Sciences
(353)
Physics
(327)
Technology
(270)
Physics, Applied
(238)
Materials Science
(163)
Engineering
(138)
Engineering, Electrical & Electronic
(131)
Materials Science, Multidisciplinary
(126)
Physics, Condensed Matter
(97)
Science & Technology - Other Topics
(72)
Gallium Nitrides
(71)
Optics
(63)
Exact Sciences And Technology
(57)
Nanoscience & Nanotechnology
(56)
Chemistry
(49)
Substrates
(46)
Gan
(41)
Silicon Carbide
(32)
Chemical Vapor Deposition
(31)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Do all screw dislocations cause leakage in GaN-based devices?

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias

Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3

High Sensitivity and Selectivity of AsP Sensor in Detecting SF6 Decomposition Gases

Design of a quantum-spin sensor with sub-micron resolution and enhanced optical read-out ability by the nitrogen-vacancy centers in diamond

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure

RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs

Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

Speed up Ferroelectric Organic Transistor Memories by Using Two-Dimensional Molecular Crystalline Semiconductors

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

Forward tunneling current in GaN-based blue light-emitting diodes

Effects of indium doping on the crystallographic, morphological, electrical, and optical properties of highly crystalline ZnO films

Property manipulation through pulsed laser annealing in high dose Mg-implanted GaN

Charge transfer dynamics of the CdTe quantum dots fluorescence quenching induced by ferrous (II) ions

Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors

High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes

Analysis of Dark Count Mechanisms of 4H-SiC Ultraviolet Avalanche Photodiodes Working in Geiger Mode

M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes

Suchergebnisse filtern