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Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Maternal serum uric acid concentration is associated with the expression of tumour necrosis factor-α and intercellular adhesion molecule-1 in patients with preeclampsia

Journal of human hypertension, 2016-07, Vol.30 (7), p.456-462

2016

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A prognostic model for assessment of outcome of root canal treatment in teeth with pulpitis or apical periodontitis

Beijing da xue xue bao. Journal of Peking University. Yi xue ban, 2018-02, Vol.50 (1), p.123

2018

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Free vibration analysis of a cracked beam by finite element method

Journal of sound and vibration, 2004-06, Vol.273 (3), p.457-475

2004

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Molecular Cloning and Abiotic Stress Expression Analysis of GTPase Era Gene in Mulberry (Morus alba L.)

Russian journal of plant physiology, 2021-03, Vol.68 (2), p.293-299

2021

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Electroluminescent and transport mechanisms of n-ZnO∕p-Si heterojunctions

Applied physics letters, 2006-05, Vol.88 (18)

2006

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Quality assessment of global colorectal cancer screening guidelines and consensus

Zhōnghuá liúxíngbìng zázhì, 2021-02, Vol.42 (2), p.248

2021

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The research progress of circular RNAs in the development and progression of cervical cancer

Zhōnghuá yùfáng-yīxué zázhì, 2021-03, Vol.55 (3), p.409

2021

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Quality assessment of global breast cancer screening guidelines

Zhōnghuá liúxíngbìng zázhì, 2021-02, Vol.42 (2), p.219

2021

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Metabolic syndrome components and breast cancer risk in Chinese females: a population based prospective study

Zhōnghuá yùfáng-yīxué zázhì, 2021-03, Vol.55 (3), p.359

2021

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Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers

IEEE photonics journal, 2015-12, Vol.7 (6), p.1-7

2015

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β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

Applied physics letters, 2021-05, Vol.118 (20)

2021

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Correlation between green luminescence and morphology evolution of ZnO films

Applied physics. A, Materials science & processing, 2005-09, Vol.81 (4), p.759-762

2005

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Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

Applied physics letters, 2006-02, Vol.88 (9)

2006

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Influence of two positions for measuring instrument adapter on measurement of hand-transmitted vibration in grinding machine

Zhonghua laodong weisheng zhiyebing zazhi, 2016-06, Vol.34 (6), p.426

2016

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Metal-Semiconductor-Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate

IEEE electron device letters, 2011-09, Vol.32 (9), p.1260-1262

2011

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Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

Applied physics letters, 2020-07, Vol.117 (2)

2020

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In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 p-n heterojunction

Applied physics letters, 2021-06, Vol.118 (26)

2021

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Fermi-level band filling and band-gap renormalization in Ga-doped ZnO

Applied physics letters, 2005-05, Vol.86 (19), p.192111-192111-3

2005

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On the origin of dislocation generation and annihilation in α-Ga2O3 epilayers on sapphire

Applied physics letters, 2019-10, Vol.115 (18)

2019

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Vibration and stability of cracked hollow-sectional beams

Journal of sound and vibration, 2003-10, Vol.267 (4), p.933-954

2003

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Improved Performances of InGaN Schottky Photodetectors by Inducing a Thin Insulator Layer and Mesa Process

IEEE electron device letters, 2009-06, Vol.30 (6), p.605-607

2009

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Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes

Applied physics letters, 2023-04, Vol.122 (15)

2023

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AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure

Applied physics letters, 2018-09, Vol.113 (12)

2018

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A self-aligned Ga2O3 heterojunction barrier Schottky power diode

Applied physics letters, 2023-07, Vol.123 (1)

2023

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Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

Maternal serum uric acid concentration is associated with the expression of tumour necrosis factor-α and intercellular adhesion molecule-1 in patients with preeclampsia

A prognostic model for assessment of outcome of root canal treatment in teeth with pulpitis or apical periodontitis

Free vibration analysis of a cracked beam by finite element method

Molecular Cloning and Abiotic Stress Expression Analysis of GTPase Era Gene in Mulberry (Morus alba L.)

Electroluminescent and transport mechanisms of n-ZnO∕p-Si heterojunctions

Quality assessment of global colorectal cancer screening guidelines and consensus

The research progress of circular RNAs in the development and progression of cervical cancer

Quality assessment of global breast cancer screening guidelines

Metabolic syndrome components and breast cancer risk in Chinese females: a population based prospective study

Analysis of 270/290/330-nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Different Al Content in Quantum Wells and Barriers

β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

Correlation between green luminescence and morphology evolution of ZnO films

Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

Influence of two positions for measuring instrument adapter on measurement of hand-transmitted vibration in grinding machine

Metal-Semiconductor-Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate

Sulfur regulation of boron doping and growth behavior for high-quality diamond in microwave plasma chemical vapor deposition

In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 p-n heterojunction

Fermi-level band filling and band-gap renormalization in Ga-doped ZnO

On the origin of dislocation generation and annihilation in α-Ga2O3 epilayers on sapphire

Vibration and stability of cracked hollow-sectional beams

Improved Performances of InGaN Schottky Photodetectors by Inducing a Thin Insulator Layer and Mesa Process

Traps inhomogeneity induced conversion of Shockley–Read–Hall recombination in NiO/β-Ga2O3 p+–n heterojunction diodes

AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure

A self-aligned Ga2O3 heterojunction barrier Schottky power diode

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