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The optimized interface characteristics of β-Ga2O3 Schottky barrier diode with low temperature annealing

Applied physics letters, 2021-09, Vol.119 (13)

2021

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Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Applied physics letters, 2022-03, Vol.120 (12)

2022

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Enhanced performance of Ku-band GaN MMIC PA through embedded microfluidic cooling

Applied physics letters, 2024-04, Vol.124 (18)

2024

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A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Applied physics letters, 2023-05, Vol.122 (18)

2023

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Medical students' perceptions and performance in an online regional anatomy course during the Covid‐19 pandemic

Anatomical sciences education, 2022-08, Vol.15 (5), p.928-942

2022

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Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment

Applied physics letters, 2023-04, Vol.122 (16)

2023

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Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Applied physics letters, 2020-05, Vol.116 (20)

2020

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Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

Applied physics letters, 2018-06, Vol.112 (23)

2018

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An L314Q mutation in Map3k1 gene results in failure of eyelid fusion in the N-ethyl-N-nitrosourea-induced mutant line

Experimental Animals, 2021, Vol.70(4), pp.459-468

2021

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Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si

Applied physics letters, 2019-08, Vol.115 (8)

2019

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Combined Effects of Proton Irradiation and Forward Gate-Bias Stress on the Interface Traps in AlGaN/GaN Heterostructure

IEEE transactions on nuclear science, 2021-11, Vol.68 (11), p.2616-2623

2021

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Characteristic response of striatal astrocytes to dopamine depletion

Neural regeneration research, 2020-04, Vol.15 (4), p.724-730

2020

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Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment

Physica status solidi. A, Applications and materials science, 2018-07, Vol.215 (14), p.n/a

2018

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Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors

Chinese physics B, 2022-02, Vol.31 (3), p.36103-487

2022

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Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

Chinese physics B, 2022-06, Vol.31 (6), p.68501-809

2022

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A C1976Y missense mutation in the mouse Ip3r1 gene leads to short-term mydriasis and unfolded protein response in the iris constrictor muscles

Experimental Animals, 2020, Vol.69(1), pp.45-53

2020

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Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes

Chinese physics B, 2022-05, Vol.31 (6), p.68101-771

2022

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Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

Chinese physics B, 2021-05, Vol.30 (5), p.58501-783

2021

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Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

AIP advances, 2020-06, Vol.10 (6), p.065111-065111-5

2020

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Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Applied physics letters, 2014-03, Vol.104 (9), p.93504

2014

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Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

Solid-state electronics, 2017-03, Vol.129, p.114-119

2017

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Rupture of sigmoid colon caused by compressed air

World journal of gastroenterology : WJG, 2016-03, Vol.22 (10), p.3062-3065

2016

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Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress

Chinese physics B, 2021-07, Vol.30 (7), p.77305-550

2021

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Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Applied physics letters, 2014-10, Vol.105 (17)

2014

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RETRACTED: Hypo-fractionation radiotherapy normalizes tumor vasculature in non-small cell lung cancer xenografts through the p-STAT3/HIF-1 alpha signaling pathway

Therapeutic advances in medical oncology, 2020-10, Vol.12, p.175883592096585

2020

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The optimized interface characteristics of β-Ga2O3 Schottky barrier diode with low temperature annealing

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

Enhanced performance of Ku-band GaN MMIC PA through embedded microfluidic cooling

A thorough study on the electrical performance change and trap evolution of AlGaN/GaN MIS-HEMTs under proton irradiation

Medical students' perceptions and performance in an online regional anatomy course during the Covid‐19 pandemic

Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment

Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

An L314Q mutation in Map3k1 gene results in failure of eyelid fusion in the N-ethyl-N-nitrosourea-induced mutant line

Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si

Combined Effects of Proton Irradiation and Forward Gate-Bias Stress on the Interface Traps in AlGaN/GaN Heterostructure

Characteristic response of striatal astrocytes to dopamine depletion

Study of the Temperature Dependence of AlGaN/GaN HEMTs with Oxygen Plasma Treatment

Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors

Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

A C1976Y missense mutation in the mouse Ip3r1 gene leads to short-term mydriasis and unfolded protein response in the iris constrictor muscles

Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes

Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

Rupture of sigmoid colon caused by compressed air

Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress

Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

RETRACTED: Hypo-fractionation radiotherapy normalizes tumor vasculature in non-small cell lung cancer xenografts through the p-STAT3/HIF-1 alpha signaling pathway

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