UB Paderborn / Katalog / Suche / in CDI

Silver nanoplates with ground or metastable structures obtained from template-free two-phase aqueous/organic synthesis

Journal of applied physics, 2014-01, Vol.115 (4)

2014

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Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS

Applied physics letters, 2018-11, Vol.113 (19)

2018

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Pendeo-epitaxy : A new approach for lateral growth of gallium nitride films

Journal of electronic materials, 1999-04, Vol.28 (4), p.L5-L8

1999

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Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Journal of crystal growth, 2001-02, Vol.222 (4), p.706-718

2001

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Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2013-01, Vol.113 (4)

2013

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Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied physics letters, 1997-11, Vol.71 (18), p.2638-2640

1997

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Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Applied physics letters, 1997-10, Vol.71 (17), p.2472-2474

1997

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Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Journal of electronic materials, 1998-04, Vol.27 (4), p.233-237

1998

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Deposition factors and band gap of zinc-blende AlN

Journal of applied physics, 2001-03, Vol.89 (6), p.3331-3336

2001

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Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1−xN

Diamond and related materials, 1999-03, Vol.8 (2-5), p.288-294

1999

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Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures

Applied physics letters, 1999-04, Vol.74 (17), p.2492-2494

1999

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Optical and structural properties of lateral epitaxial overgrown GaN layers

Journal of crystal growth, 1998-06, Vol.189-190, p.92-96

1998

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Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures

MRS proceedings, 1998, Vol.537, Article G3.38

1998

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In Situ SEM Observations and Electrical Measurements During the Annealing of Si/Ni Contacts to SiC

MRS proceedings, 2003, Vol.764, Article C2.11

2003

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Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and Al xGa 1− xN

Diamond and related materials, 1999, Vol.8 (2), p.288-294

1999

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Epitaxial Growth of Zinc-Blende Ain by Plasma Source Molecular Beam Epitaxy

MRS proceedings, 1999, Vol.570, Article 297

1999

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Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.275-280

1999

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Epitaxial Growth in Large Lattice Mismatch Systems: Characteristics of Domain Epitaxy

MRS proceedings, 1992, Vol.280, Article 393

1992

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Point and extended defects in the bulk and at the interface of GaN with metals

2009 International Semiconductor Device Research Symposium, 2009, p.1-2

2009

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Epitaxial Growth of TiN on GaAs(100) by Pulsed Laser Deposition

MRS proceedings, 1992-01, Vol.285, Article 343

1992

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Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors

Journal of applied physics, 2021-05, Vol.129 (19)

2021

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Transition layers at the SiO2∕SiC interface

Applied physics letters, 2008-07, Vol.93 (2)

2008

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Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Microelectronics and reliability, 2011-02, Vol.51 (2), p.201-206

2011

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Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors

Micron (Oxford, England : 1993), 2021-01, Vol.140, p.102954-102954, Article 102954

2021

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Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS

Microscopy and microanalysis, 2015-08, Vol.21 (S3), p.1537-1538

2015

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Einstellungen

Silver nanoplates with ground or metastable structures obtained from template-free two-phase aqueous/organic synthesis

Analysis of the electronic and chemical structure in boron and phosphorus passivated 4H-SiC/SiO2 interfaces using HRTEM and STEM-EELS

Pendeo-epitaxy : A new approach for lateral growth of gallium nitride films

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Deposition factors and band gap of zinc-blende AlN

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1−xN

Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures

Optical and structural properties of lateral epitaxial overgrown GaN layers

Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures

In Situ SEM Observations and Electrical Measurements During the Annealing of Si/Ni Contacts to SiC

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and Al xGa 1− xN

Epitaxial Growth of Zinc-Blende Ain by Plasma Source Molecular Beam Epitaxy

Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures

Epitaxial Growth in Large Lattice Mismatch Systems: Characteristics of Domain Epitaxy

Point and extended defects in the bulk and at the interface of GaN with metals

Epitaxial Growth of TiN on GaAs(100) by Pulsed Laser Deposition

Analytical electron microscopy of ( 2 ¯ 01) β-Ga2O3/SiO2 and ( 2 ¯ 01) β-Ga2O3/Al2O3 interface structures in MOS capacitors

Transition layers at the SiO2∕SiC interface

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors

Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS

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