UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC), 2014, p.538-541

2014

Volltextzugriff (PDF)

Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC), 2014, p.101-104

2014

Volltextzugriff (PDF)

Electrochemical stability of Li6.5La3Zr2M0.5O12 (M = Nb or Ta) against metallic lithium

Frontiers in energy research, 2018, Vol.4

2018

Volltextzugriff (PDF)

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Applied physics letters, 1997-11, Vol.71 (18), p.2638-2640

1997

Volltextzugriff (PDF)

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Applied physics letters, 1997-10, Vol.71 (17), p.2472-2474

1997

Volltextzugriff (PDF)

A compact 100-A, 850-V, silicon carbide solid-state DC circuit breaker

2016 IEEE Energy Conversion Congress and Exposition (ECCE), 2016, p.1-5

2016

Volltextzugriff (PDF)

Deposition factors and band gap of zinc-blende AlN

Journal of applied physics, 2001-03, Vol.89 (6), p.3331-3336

2001

Volltextzugriff (PDF)

Pendeo-epitaxy : A new approach for lateral growth of gallium nitride films

Journal of electronic materials, 1999-04, Vol.28 (4), p.L5-L8

1999

Volltextzugriff (PDF)

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Journal of crystal growth, 2001-02, Vol.222 (4), p.706-718

2001

Volltextzugriff (PDF)

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Journal of crystal growth, 2001-05, Vol.225 (2-4), p.134-140

2001

Volltextzugriff (PDF)

Study of the turn-on of various high-voltage SiC thyristors

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2015, p.5-9

2015

Volltextzugriff (PDF)

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Journal of electronic materials, 1998-04, Vol.27 (4), p.233-237

1998

Volltextzugriff (PDF)

Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures

Applied physics letters, 1999-04, Vol.74 (17), p.2492-2494

1999

Volltextzugriff (PDF)

Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si

Journal of applied physics, 2004-11, Vol.96 (10), p.5613-5618

2004

Volltextzugriff (PDF)

Characterization with TEM of AlN/GaN Heterostructures for Implant Activation Annealing

Microscopy and microanalysis, 2008-08, Vol.14 (S2), p.462-463

2008

Volltextzugriff (PDF)

Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC

Solid-state electronics, 2003-02, Vol.47 (2), p.253-257

2003

Volltextzugriff (PDF)

Decreasing the laser radiation absorption in the plasma plume and improving the sensitivity in quantitative laser microspectral analysis

Spectrochimica acta. Part B: Atomic spectroscopy, 1984, Vol.39 (9), p.1209-1219

1984

Volltextzugriff (PDF)

Carbon Nanotube - Substrate Interface Characteristics Studied via TEM

Microscopy and microanalysis, 2006-08, Vol.12 (S02), p.660-661

2006

Volltextzugriff (PDF)

A comparison of graphite and AlN caps used for annealing ion-implanted SiC

Journal of electronic materials, 2002-06, Vol.31 (6), p.568-575

2002

Volltextzugriff (PDF)

Structural Defects Formed in Al-Implanted and Annealed 4H-SiC

Materials science forum, 2004-01, Vol.457-460, p.889-892

2004

Volltextzugriff (PDF)

Charged Quantum Dots for High-Efficiency Photovoltaics and IR Sensing

Future Trends in Microelectronics, 2013, p.244-253

1, 2013

Volltextzugriff (PDF)

Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC

Materials science forum, 2004-01, Vol.457-460, p.929-932

2004

Volltextzugriff (PDF)

Optical and structural properties of lateral epitaxial overgrown GaN layers

Journal of crystal growth, 1998-06, Vol.189-190, p.92-96

1998

Volltextzugriff (PDF)

In Situ SEM Observations and Electrical Measurements During the Annealing of Si/Ni Contacts to SiC

MRS proceedings, 2003, Vol.764, Article C2.11

2003

Volltextzugriff (PDF)

The properties of annealed AlN films deposited by pulsed laser deposition

Journal of electronic materials, 2000-03, Vol.29 (3), p.262-267

2000

Volltextzugriff (PDF)

1 – 25 von 40

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(27)
Mit Volltextzugriff
(31)

Publikationsform

Sprache

Englisch
(37)
Russisch
(3)

Erscheinungsjahr

n.n

Thema

Science & Technology
(32)
Physical Sciences
(26)
Technology
(25)
Materials Science
(23)
Materials Science, Multidisciplinary
(22)
Physics
(20)
Physics, Applied
(17)
Exact Sciences And Technology
(8)
Silicon Carbide
(8)
Electrochemistry
(6)
Energy & Fuels
(6)
Engineering
(6)
Engineering, Electrical & Electronic
(6)
Physics, Condensed Matter
(6)
Cross-Disciplinary Physics: Materials Science; Rheology
(4)
Crystallography
(4)
Materials Science, Coatings & Films
(4)
Ascaris - Immunology
(3)
Defects
(3)
Logic Gates
(3)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Large chip area SiC PiN diodes demonstrated for thyristor protection in a pulsed system

Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

Electrochemical stability of Li6.5La3Zr2M0.5O12 (M = Nb or Ta) against metallic lithium

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

A compact 100-A, 850-V, silicon carbide solid-state DC circuit breaker

Deposition factors and band gap of zinc-blende AlN

Pendeo-epitaxy : A new approach for lateral growth of gallium nitride films

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Study of the turn-on of various high-voltage SiC thyristors

Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures

Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si

Characterization with TEM of AlN/GaN Heterostructures for Implant Activation Annealing

Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC

Decreasing the laser radiation absorption in the plasma plume and improving the sensitivity in quantitative laser microspectral analysis

Carbon Nanotube - Substrate Interface Characteristics Studied via TEM

A comparison of graphite and AlN caps used for annealing ion-implanted SiC

Structural Defects Formed in Al-Implanted and Annealed 4H-SiC

Charged Quantum Dots for High-Efficiency Photovoltaics and IR Sensing

Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC

Optical and structural properties of lateral epitaxial overgrown GaN layers

In Situ SEM Observations and Electrical Measurements During the Annealing of Si/Ni Contacts to SiC

The properties of annealed AlN films deposited by pulsed laser deposition

Suchergebnisse filtern