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Complete Genome Sequence of Bacillus thuringiensis subsp. chinensis Strain CT-43

Journal of Bacteriology, 2011-07, Vol.193 (13), p.3407-3408

2011

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High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer

Applied sciences, 2023-04, Vol.13 (9), p.5506

2023

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Purification of metallurgical silicon through directional solidification in a large cold crucible

Journal of crystal growth, 2012-09, Vol.355 (1), p.145-150

2012

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Impurity band conduction in Mn-doped p type InAs single crystal

Materials science in semiconductor processing, 2018-09, Vol.84, p.115-118

2018

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Large scale purification of metallurgical silicon for solar cell by using electron beam melting

Journal of crystal growth, 2012-07, Vol.351 (1), p.19-22

2012

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Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method

Journal of crystal growth, 2008-02, Vol.310 (3), p.639-645

2008

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Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment

半导体学报：英文版, 2017-11, Vol.38 (11), p.60-65

2017

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Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell

Journal of semiconductors, 2016-06, Vol.37 (6), p.21-26

曹可慰刘彤刘京明谢辉陶东言赵有文董志远惠峰

2016

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Analysis of solar cells fabricated from UMG-Si purified by a novel metallurgical method

Semiconductor science and technology, 2013-01, Vol.28 (1), p.15024

2013

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Implantation induced defects and electrical properties of Sb-implanted ZnO

Science China. Technological sciences, 2015-08, Vol.58 (8), p.1333-1338

2015

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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation

Semiconductor science and technology, 2011-07, Vol.26 (7), p.075016

2011

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Impurities related micro-defects in GaSb crystal grown by LEC method

Journal of crystal growth, 2024-03, Vol.630, p.127585, Article 127585

2024

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Carbon agent chemical vapor transport growth of Ga2O3 crystal

半导体学报：英文版, 2016-10 (10), p.47-51

苏杰刘彤刘京明杨俊沈桂英白永彪董志远赵有文

2016

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Relation extraction: advancements through deep learning and entity-related features

Social Network Analysis and Mining, 2023-06, Vol.13 (1), p.92-92, Article 92

2023

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Epitaxial hillocks defects caused by subsurface damage from InAs substrate

Microelectronics and reliability, 2024-05, Vol.156, p.115376, Article 115376

2024

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Investigation of Comet-Shaped Defects in an EPI-InP Layer Grown on S-Doped and Fe-Doped InP Substrates

Journal of electronic materials, 2023-08, Vol.52 (8), p.5047-5052

2023

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Oxidation related particles on GaSb (100) substrate surfaces

Journal of crystal growth, 2022-03, Vol.581, p.126499, Article 126499

2022

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Structural Characterization of Carbon-implanted GaSb

Journal of Wuhan University of Technology. Materials science edition, 2023-10, Vol.38 (5), p.969-973

2023

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Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method

Materials science in semiconductor processing, 2023-11, Vol.167, p.107770, Article 107770

2023

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High power GaSb-based superluminescent diode with cascade cavity suppression waveguide geometry and ultra-low antireflection coating

Applied physics letters, 2023-07, Vol.123 (2)

2023

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Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals

Journal of crystal growth, 2019-11, Vol.526, p.125237, Article 125237

2019

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HCl-H2SO4-H2O solution etching behavior of InAs (100) surface

Journal of crystal growth, 2020-10, Vol.547, p.125800, Article 125800

2020

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VGF growth of high quality InAs single crystals with low dislocation density

Journal of crystal growth, 2020-02, Vol.531, p.125350, Article 125350

2020

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Cyclic di-GMP contributes to adaption and virulence of Bacillus thuringiensis through a riboswitch-regulated collagen adhesion protein

Scientific reports, 2016-07, Vol.6 (1), p.28807-28807, Article 28807

2016

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Evaluation of LEC and VGF-InAs substrates through surface defect characterization and epitaxy growth

Materials science in semiconductor processing, 2021-04, Vol.125, p.105624, Article 105624

2021

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Complete Genome Sequence of Bacillus thuringiensis subsp. chinensis Strain CT-43

High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer

Purification of metallurgical silicon through directional solidification in a large cold crucible

Impurity band conduction in Mn-doped p type InAs single crystal

Large scale purification of metallurgical silicon for solar cell by using electron beam melting

Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method

Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment

Evaluation of four inch diameter VGF-Ge substrates used for manufacturing multi-junction solar cell

Analysis of solar cells fabricated from UMG-Si purified by a novel metallurgical method

Implantation induced defects and electrical properties of Sb-implanted ZnO

Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation

Impurities related micro-defects in GaSb crystal grown by LEC method

Carbon agent chemical vapor transport growth of Ga2O3 crystal

Relation extraction: advancements through deep learning and entity-related features

Epitaxial hillocks defects caused by subsurface damage from InAs substrate

Investigation of Comet-Shaped Defects in an EPI-InP Layer Grown on S-Doped and Fe-Doped InP Substrates

Oxidation related particles on GaSb (100) substrate surfaces

Structural Characterization of Carbon-implanted GaSb

Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method

High power GaSb-based superluminescent diode with cascade cavity suppression waveguide geometry and ultra-low antireflection coating

Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals

HCl-H2SO4-H2O solution etching behavior of InAs (100) surface

VGF growth of high quality InAs single crystals with low dislocation density

Cyclic di-GMP contributes to adaption and virulence of Bacillus thuringiensis through a riboswitch-regulated collagen adhesion protein

Evaluation of LEC and VGF-InAs substrates through surface defect characterization and epitaxy growth

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