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Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.168-171

2008

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NiSi2/Si interface chemistry and epitaxial growth mode

Acta materialia, 2009, Vol.57 (1), p.232-236

2009

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Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs

Solid-state electronics, 2006-04, Vol.50 (4), p.594-600

2006

Volltextzugriff (PDF)

Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents

Solid-state electronics, 2018-05, Vol.143, p.62-68

2018

Volltextzugriff (PDF)

Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages

Solid-state electronics, 2016-01, Vol.115, p.152-159

2016

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Process modules for GeSn nanoelectronics with high Sn-contents

Solid-state electronics, 2017-02, Vol.128, p.54-59

2017

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Roughness improvement of the CoSi2/Si-interface for an application as buried silicide

Microelectronic engineering, 2007-11, Vol.84 (11), p.2537-2541

2007

Volltextzugriff (PDF)

Cryogenic Steep Slope Field-Effect Transistors

2022 IEEE Silicon Nanoelectronics Workshop (SNW), 2022, p.1-2

2022

Volltextzugriff (PDF)

Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon

IEEE electron device letters, 2010-04, Vol.31 (4), p.350-352

2010

Volltextzugriff (PDF)

Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity

Solid-state electronics, 2015-06, Vol.108, p.97-103

2015

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Generation of uniform transverse beam distributions for high-energy electron radiography

Laser and particle beams, 2018-09, Vol.36 (3), p.313-322

2018

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Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3

Solid-state electronics, 2015-06, Vol.108, p.19-23

2015

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Silicon–germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions

Solid-state electronics, 2014-08, Vol.98, p.75-80

2014

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Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs

Microelectronic engineering, 2014-01, Vol.113, p.5-9

2014

Volltextzugriff (PDF)

20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Solid-state electronics, 2012-05, Vol.71, p.88-92

2012

Volltextzugriff (PDF)

Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50nm

Solid-state electronics, 2014-07, Vol.97, p.76-81

2014

Volltextzugriff (PDF)

Si tunneling transistors with high on-currents and slopes of 50mV/dec using segregation doped NiSi2 tunnel junctions

Solid-state electronics, 2013-06, Vol.84, p.211-215

2013

Volltextzugriff (PDF)

Nanometer patterning of epitaxial CoSi2 on silicon-on-insulator substrates

Microelectronic engineering, 2002, Vol.60 (1-2), p.183-190

2002

Volltextzugriff (PDF)

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Solid-state electronics, 2012-08, Vol.74, p.97-101

2012

Volltextzugriff (PDF)

NiSi 2/Si interface chemistry and epitaxial growth mode

Acta materialia, 2009, Vol.57 (1), p.232-236

2009

Volltextzugriff (PDF)

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Solid-state electronics, 2012-05, Vol.71, p.42-47

2012

Volltextzugriff (PDF)

20nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Solid-state electronics, 2012-05, Vol.71, p.88-92

2012

Volltextzugriff (PDF)

Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-07, Vol.307, p.408-411

2013

Volltextzugriff (PDF)

Superconducting platinum silicide for electron cooling in silicon

Solid-state electronics, 2015-01, Vol.103, p.15-18

2015

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High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Solid-state electronics, 2011-08, Vol.62 (1), p.185-188

2011

Volltextzugriff (PDF)

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Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

NiSi2/Si interface chemistry and epitaxial growth mode

Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs

Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents

Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages

Process modules for GeSn nanoelectronics with high Sn-contents

Roughness improvement of the CoSi2/Si-interface for an application as buried silicide

Cryogenic Steep Slope Field-Effect Transistors

Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon

Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity

Generation of uniform transverse beam distributions for high-energy electron radiography

Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3

Silicon–germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions

Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs

20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50nm

Si tunneling transistors with high on-currents and slopes of 50mV/dec using segregation doped NiSi2 tunnel junctions

Nanometer patterning of epitaxial CoSi2 on silicon-on-insulator substrates

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

NiSi 2/Si interface chemistry and epitaxial growth mode

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

20nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

Superconducting platinum silicide for electron cooling in silicon

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

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