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Simulation and experimental study of 3-step junction termination extension for high-voltage 4H-SiC gate turn-off thyristors

Solid-state electronics, 2013-08, Vol.86, p.36-40

2013

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High-Frequency Switching of SiC High-Voltage LJFET

IEEE transactions on power electronics, 2009-01, Vol.24 (1), p.271-277

2009

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A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes

Solid-state electronics, 2011-09, Vol.63 (1), p.167-176

2011

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4H-SiC UV photo detectors with large area and very high specific detectivity

IEEE journal of quantum electronics, 2004-09, Vol.40 (9), p.1315-1320

2004

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Monolithic Integration of a 4H-Silicon Carbide Vertical JFET and a JBS Diode

IEEE electron device letters, 2011-06, Vol.32 (6), p.785-787

2011

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Optical Filter Design and Analysis: A Signal Processing Approach

1999

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Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC

Materials Science Forum, 2016-05, Vol.858, p.193-196

2016

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Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1899-1906

2008

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Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor

Materials Science Forum, 2016-05, Vol.858, p.189-192

2016

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Proton Irradiation of Ultraviolet 4H-SiC Single Photon Avalanche Diodes

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.3343-3347

2011

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Demonstration of the first 4H-SiC avalanche photodiodes

Solid-state electronics, 2000-02, Vol.44 (2), p.341-346

2000

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Monte Carlo study of electron transport in SiC

Journal of applied physics, 1998-03, Vol.83 (6), p.3161-3167

1998

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Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers

IEEE electron device letters, 2008-05, Vol.29 (5), p.471-473

2008

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Silicon Carbide Power Field-Effect Transistors

MRS bulletin, 2005-04, Vol.30 (4), p.293-298

Zhao, Jian H.

2005

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Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

IEEE transactions on electron devices, 2003-08, Vol.50 (8), p.1724-1732

2003

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Demonstration of the first SiC power integrated circuit

Solid-state electronics, 2008-10, Vol.52 (10), p.1636-1646

2008

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On-line sample enrichment for the determination of proteins by capillary zone electrophoresis with poly(vinyl alcohol)-coated bubble cell capillaries

Electrophoresis, 2005-09, Vol.26 (18), p.3486-3494

2005

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5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application

Materials science forum, 2009, Vol.600-603, p.947-950

2009

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Characterization of 4H-SiC gate turn-off thyristor

Solid-state electronics, 2000-02, Vol.44 (2), p.347-352

2000

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4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile

Materials science forum, 2009-01, Vol.615-617, p.829-832

2009

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Development of Ultra High Sensitivity UV Silicon Carbide Detectors

Materials science forum, 2006-10, Vol.527-529, p.1461-1464, Article 1461

2006

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Design, fabrication and application of 4H-SiC trenched-and-lmplanted vertical JFETs

Materials science forum, 2006, Vol.527-529, p.1191-1194

2006

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4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Materials science forum, 2009, Vol.600-603, p.1203-1206

2009

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1000-V 9.1- \hbox\Omega \cdot \hbox^ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

IEEE electron device letters, 2007-05, Vol.28 (5), p.404-407

2007

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Demonstration of High-Voltage 4H-SiC Bipolar RF Power Limiter

Materials science forum, 2006-10, Vol.527-529, p.1371-1374

2006

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Simulation and experimental study of 3-step junction termination extension for high-voltage 4H-SiC gate turn-off thyristors

High-Frequency Switching of SiC High-Voltage LJFET

A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes

4H-SiC UV photo detectors with large area and very high specific detectivity

Monolithic Integration of a 4H-Silicon Carbide Vertical JFET and a JBS Diode

Optical Filter Design and Analysis: A Signal Processing Approach

Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC

Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

Elimination of BPD in 5~30um Thick 4H-SiC Epitaxial Layers Grown in a Warm-Wall Planetary Reactor

Proton Irradiation of Ultraviolet 4H-SiC Single Photon Avalanche Diodes

Demonstration of the first 4H-SiC avalanche photodiodes

Monte Carlo study of electron transport in SiC

Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers

Silicon Carbide Power Field-Effect Transistors

Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

Demonstration of the first SiC power integrated circuit

On-line sample enrichment for the determination of proteins by capillary zone electrophoresis with poly(vinyl alcohol)-coated bubble cell capillaries

5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application

Characterization of 4H-SiC gate turn-off thyristor

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile

Development of Ultra High Sensitivity UV Silicon Carbide Detectors

Design, fabrication and application of 4H-SiC trenched-and-lmplanted vertical JFETs

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

1000-V 9.1- \hbox\Omega \cdot \hbox^ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

Demonstration of High-Voltage 4H-SiC Bipolar RF Power Limiter

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