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Progress in External Quantum Efficiency for III‐Nitride Based Deep Ultraviolet Light‐Emitting Diodes

Physica status solidi. A, Applications and materials science, 2019-02, Vol.216 (4), p.n/a

2019

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Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes

Optics express, 2019-06, Vol.27 (12), p.A643-A653

2019

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Investigation of Off-State Stress Induced Degradation of SiC MOSFETs Under Short-Circuit Condition

IEEE transactions on industrial electronics (1982), 2023-05, Vol.70 (5), p.5224-5234

2023

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Balanced Resistivity in n-AlGaN Layer to Increase the Current Uniformity for AlGaN-Based DUV LEDs

IEEE photonics technology letters, 2022-10, Vol.34 (20), p.1065-1068

2022

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Large scale synthesis of full-color emissive carbon dots from a single carbon source by a solvent-free method

Nano research, 2022-04, Vol.15 (4), p.3548-3555

2022

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Recent Advances on GaN-Based Micro-LEDs

Micromachines (Basel), 2023-05, Vol.14 (5), p.991

2023

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A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs

Journal of physics. D, Applied physics, 2021-04, Vol.54 (15), p.153002

2021

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MIS-Based GaN Schottky Barrier Diodes: Interfacial Conditions on the Reverse and Forward Properties

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5522-5529

2022

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Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Nanoscale research letters, 2018-04, Vol.13 (1), p.122-7, Article 122

2018

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One Stone, Two Birds: High-Efficiency Blue-Emitting Perovskite Nanocrystals for LED and Security Ink Applications

Chemistry of materials, 2019-07, Vol.31 (14), p.5116-5123

2019

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Is It Possible to Make Thin p-GaN Layer for AlGaN-Based Deep Ultraviolet Micro Light Emitting Diodes?

IEEE electron device letters, 2024-03, Vol.45 (3), p.316-319

2024

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Impact of the Surface Recombination on the Thermal Properties for GaN-Based μLEDs

IEEE photonics technology letters, 2023-10, Vol.35 (20), p.1111-1114

2023

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Promoted Hole Transport Capability by Improving Lateral Current Spreading for High‐Efficiency Quantum Dot Light‐Emitting Diodes

Advanced science, 2020-12, Vol.7 (23), p.2001760-n/a

2020

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Doping-Induced Energy Barriers to Improve the Current Spreading Effect for AlGaN-Based Ultraviolet-B Light-Emitting Diodes

IEEE electron device letters, 2020-07, Vol.41 (7), p.1001-1004

2020

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Improving the Current‐Spreading Effect for GaN‐Based Quasi‐Vertical PIN Diode by Using an Embedded PN Junction

Physica status solidi. A, Applications and materials science, 2020-09, Vol.217 (18), p.n/a

2020

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On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

Japanese Journal of Applied Physics, 2023-09, Vol.62 (9), p.94001

2023

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On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes

Optics express, 2017-07, Vol.25 (14), p.16550-16559

2017

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Improving the Performance of Free-pGaN Deep-Ultraviolet Light-Emitting Diodes by Embedding Self-Assembled Ni Nanoparticles Between p-AlGaN/p-Electrode

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6410-6414

2023

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Hybrid GaO/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6166-6170

2022

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Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes

Nanoscale research letters, 2019-05, Vol.14 (1), p.149-9, Article 149

2019

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3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1918-1923

2022

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On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

Materials, 2017-10, Vol.10 (10), p.1221

2017

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GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5707-5712

2023

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Lead-free, stable orange-red-emitting hybrid copper based organic-inorganic compounds

Dalton transactions : an international journal of inorganic chemistry, 2021-02, Vol.5 (8), p.2766-2773

2021

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Synthesis of highly stable quantum-dot silicone nanocomposites via in situ zinc-terminated polysiloxane passivation

Nanoscale, 2017-11, Vol.9 (43), p.16836-16842

2017

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Progress in External Quantum Efficiency for III‐Nitride Based Deep Ultraviolet Light‐Emitting Diodes

Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes

Investigation of Off-State Stress Induced Degradation of SiC MOSFETs Under Short-Circuit Condition

Balanced Resistivity in n-AlGaN Layer to Increase the Current Uniformity for AlGaN-Based DUV LEDs

Large scale synthesis of full-color emissive carbon dots from a single carbon source by a solvent-free method

Recent Advances on GaN-Based Micro-LEDs

A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs

MIS-Based GaN Schottky Barrier Diodes: Interfacial Conditions on the Reverse and Forward Properties

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

One Stone, Two Birds: High-Efficiency Blue-Emitting Perovskite Nanocrystals for LED and Security Ink Applications

Is It Possible to Make Thin p-GaN Layer for AlGaN-Based Deep Ultraviolet Micro Light Emitting Diodes?

Impact of the Surface Recombination on the Thermal Properties for GaN-Based μLEDs

Promoted Hole Transport Capability by Improving Lateral Current Spreading for High‐Efficiency Quantum Dot Light‐Emitting Diodes

Doping-Induced Energy Barriers to Improve the Current Spreading Effect for AlGaN-Based Ultraviolet-B Light-Emitting Diodes

Improving the Current‐Spreading Effect for GaN‐Based Quasi‐Vertical PIN Diode by Using an Embedded PN Junction

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes

Improving the Performance of Free-pGaN Deep-Ultraviolet Light-Emitting Diodes by Embedding Self-Assembled Ni Nanoparticles Between p-AlGaN/p-Electrode

Hybrid GaO/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity

Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity

Lead-free, stable orange-red-emitting hybrid copper based organic-inorganic compounds

Synthesis of highly stable quantum-dot silicone nanocomposites via in situ zinc-terminated polysiloxane passivation

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