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A 0.0043-mm 2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248-1252

2023

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A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC Network

IEEE transactions on very large scale integration (VLSI) systems, 2023-08, Vol.31 (8), p.1248-1252

2023

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0.005% Preservative-Free Latanoprost Induces Dry Eye-Like Ocular Surface Damage via Promotion of Inflammation in Mice

Investigative ophthalmology & visual science, 2018-07, Vol.59 (8), p.3375-3384

2018

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A 0.1–1.1 GHz inductorless differential LNA with double g m -boosting and positive feedback

Analog integrated circuits and signal processing, 2017-11, Vol.93 (2), p.205-215

2017

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A 0.1–1.1 GHz inductorless differential LNA with double gm-boosting and positive feedback

Analog integrated circuits and signal processing, 2017-11, Vol.93 (2), p.205-215

2017

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A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifier

Journal of semiconductors, 2020-06, Vol.41 (6), p.62401-48

2020

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A 0.1-3.4 GHz LNA with Multiple Feedback and Current-Reuse Technique based on 0.13-μm SOI CMOS

2019 IEEE MTT-S International Wireless Symposium (IWS), 2019, p.1-3

2019

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A 0.1-6 GHz inductorless differential common gate LNA

2015 IEEE International Wireless Symposium (IWS 2015), 2015, p.1-4

2015

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A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

International journal of circuit theory and applications, 2018-04, Vol.46 (4), p.827-841

2018

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0.14THz high speed data communication over 1.5 kilometers

2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves, 2012, p.1-2

2012

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0.18µm 200V SOI-BCD Technology with Ultra-Low Specific On-Resistance LDMOS for Automotive Application

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.266-269

2023

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0.2-4.0 THz broadband terahertz detector based on antenna-coupled AlGaN/GaN HEMTs arrayed in a bow-tie pattern

Optics express, 2023-03, Vol.31 (6), p.10720-10731

2023

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0.22THz Wideband Doubler Based on a Single-chip GaAs Monolithic Integration

2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2022, p.1-2

2022

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A 0.3 THz Multi-Beam Extended Interaction Klystron Based on TM 10,1,0 Mode Coaxial Coupled Cavity

IEEE access, 2020, Vol.8, p.214383-214391

2020

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A 0.3 THz Multi-Beam Extended Interaction Klystron Based on TM10,1,0 Mode Coaxial Coupled Cavity

IEEE access, 2020, Vol.8, p.214383-214391

2020

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0.339fJ/bit/search energy-efficient TCAM macro design in 40nm LP CMOS

2014 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2014, p.129-132

2014

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0.34 THz Continuous Wave Microwave Power Module

2022 23rd International Vacuum Electronics Conference (IVEC), 2022, p.180-181

2022

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0.34-THz Wireless Link Based on High-Order Modulation for Future Wireless Local Area Network Applications

IEEE transactions on terahertz science and technology, 2014-01, Vol.4 (1), p.75-85

2014

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0.36BiScO^sub 3^-0.64PbTiO^sub 3^ piezoelectric ceramics for high temperature ultrasonic transducer applications

Journal of alloys and compounds, 2018-04, Vol.743, p.365

2018

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0.36BiScO3-0.64PbTiO3 piezoelectric ceramics for high temperature ultrasonic transducer applications

Journal of alloys and compounds, 2018-04, Vol.743, p.365-371

2018

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A 0.42V Vccmin ASIC-compatible pulse-latch solution as a replacement for a traditional master-slave flip-flop in a digital SOC

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 2014, p.1-4

2014

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A 0.5-16.3 Gbps Multi-Standard Serial Transceiver With 219 mW/Channel in 16-nm FinFET

IEEE journal of solid-state circuits, 2017-07, Vol.52 (7), p.1783-1797

2017

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A 0.5-16.3Gbps multi-standard serial transceiver with 219mW/channel in 16nm FinFET

ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 2016, p.297-300

2016

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A 0.5-3.0 GHz SP4T RF switch with improved body self-biasing technique in 130-nm SOI CMOS

Journal of semiconductors, 2020-10, Vol.41 (10), p.102404-73

2020

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A 0.5-5.6 GHz Inductorless Wideband LNA with Local Active Feedback

2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM), 2018, p.164-168

2018

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1 – 25 von 285.875

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A 0.0043-mm 2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R- RC Network

A 0.0043-mm2 0.085-μW/MHz Relaxation Oscillator Using Charge-Prestored Asymmetric Swings R-RC Network

0.005% Preservative-Free Latanoprost Induces Dry Eye-Like Ocular Surface Damage via Promotion of Inflammation in Mice

A 0.1–1.1 GHz inductorless differential LNA with double g m -boosting and positive feedback

A 0.1–1.1 GHz inductorless differential LNA with double gm-boosting and positive feedback

A 0.1-1.5 GHz multi-octave quadruple-stacked CMOS power amplifier

A 0.1-3.4 GHz LNA with Multiple Feedback and Current-Reuse Technique based on 0.13-μm SOI CMOS

A 0.1-6 GHz inductorless differential common gate LNA

A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

0.14THz high speed data communication over 1.5 kilometers

0.18µm 200V SOI-BCD Technology with Ultra-Low Specific On-Resistance LDMOS for Automotive Application

0.2-4.0 THz broadband terahertz detector based on antenna-coupled AlGaN/GaN HEMTs arrayed in a bow-tie pattern

0.22THz Wideband Doubler Based on a Single-chip GaAs Monolithic Integration

A 0.3 THz Multi-Beam Extended Interaction Klystron Based on TM 10,1,0 Mode Coaxial Coupled Cavity

A 0.3 THz Multi-Beam Extended Interaction Klystron Based on TM10,1,0 Mode Coaxial Coupled Cavity

0.339fJ/bit/search energy-efficient TCAM macro design in 40nm LP CMOS

0.34 THz Continuous Wave Microwave Power Module

0.34-THz Wireless Link Based on High-Order Modulation for Future Wireless Local Area Network Applications

0.36BiScO^sub 3^-0.64PbTiO^sub 3^ piezoelectric ceramics for high temperature ultrasonic transducer applications

0.36BiScO3-0.64PbTiO3 piezoelectric ceramics for high temperature ultrasonic transducer applications

A 0.42V Vccmin ASIC-compatible pulse-latch solution as a replacement for a traditional master-slave flip-flop in a digital SOC

A 0.5-16.3 Gbps Multi-Standard Serial Transceiver With 219 mW/Channel in 16-nm FinFET

A 0.5-16.3Gbps multi-standard serial transceiver with 219mW/channel in 16nm FinFET

A 0.5-3.0 GHz SP4T RF switch with improved body self-biasing technique in 130-nm SOI CMOS

A 0.5-5.6 GHz Inductorless Wideband LNA with Local Active Feedback

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