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Dynamic behaviors of rockslides subjected to brittle failure of locked segments

Journal of mountain science, 2023-02, Vol.20 (2), p.532-541

2023

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Experimental study on the failure characteristics and damage evolution of sandstones from typical buried depths in high in situ stress area

Lithosphere, 2022, Vol.2022 (Special 10)

2022

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A comparison of mechanical properties and failure processes of saturated and unsaturated slate from Sichuan-Tibet Plateau area, China

Lithosphere, 2022, Vol.2021 (Special 4)

2022

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Spatial-temporal distribution of debris flow impact pressure on rigid barrier

Journal of mountain science, 2019-04, Vol.16 (4), p.793-805

2019

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Variational quantum imaginary time evolution for matrix product state Ansatz with tests on transcorrelated Hamiltonians

The Journal of chemical physics, 2024-10, Vol.161 (14)

2024

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Improved optimization for the neural-network quantum states and tests on the chromium dimer

The Journal of chemical physics, 2024-06, Vol.160 (23)

2024

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A Nonstochastic Optimization Algorithm for Neural-Network Quantum States

Journal of chemical theory and computation, 2023-11, Vol.19 (22), p.8156-8165

2023

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Calculation of the ultimate depth of a scour pit after debris flow through drainage canal ribs

Journal of mountain science, 2016-02, Vol.13 (2), p.246-254

2016

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Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

Chinese physics letters, 2013-11, Vol.30 (11), p.118501-1-118501-4

2013

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Geothermal characteristics of the Xianshuihe fault zone and their engineering influence on tunnel construction

Thermal science, 2023, Vol.27 (1 Part B), p.615-622

2023

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Energy evolution and distribution law of rock under thermal mechanical coupling

Thermal science, 2022, Vol.26 (2 Part A), p.1081-1088

2022

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Strained and strain-relaxed epitaxial Ge1−xSnx alloys on Si(100) substrates

Chinese physics B, 2011-06, Vol.20 (6), p.068103-jQuery1323923684614='49'

2011

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Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Chinese physics B, 2012, Vol.21 (1), p.493-498

胡炜玄成步文薛春来张广泽苏少坚左玉华王启明

2012

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Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser

中国物理B：英文版, 2015-02 (2), p.191-197

张东亮成步文薛春来张旭丛慧刘智张广泽王启明

2015

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High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy

Wuli xuebao, 2013-03, Vol.62 (5), p.58101

2013

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Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R

Chinese physics letters, 2005-09, Vol.22 (9), p.2269-2272

2005

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Lattice constant deviation from Vegard's law in GeSn alloys

Wuli xuebao, 2012-09, Vol.61 (17), p.176104

2012

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Theoretical study of the optical gain characteristics of a Ge sub(1-x)Sn sub(x) alloy for a short-wave infrared laser

Chinese physics B, 2015-02, Vol.24 (2), p.024211-1-024211-7

2015

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Theoretical study of the optical gain characteristics of a Ge 1− x Sn x alloy for a short-wave infrared laser

Chinese physics B, 2015-02, Vol.24 (2), p.24211

2015

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Theoretical study of the optical gain characteristics of a Ge1−xSnx alloy for a short-wave infrared laserProject supported by the Major State Basic Research Development Program of China (Grant No. 2013CB632103), the National High-Technology Research and Development Program of China (Grant No. 2012AA012202), and the National Natural Science Foundation of China (Grant Nos. 61177038 and 61176013)

Chinese physics B, 2015-02, Vol.24 (2)

2015

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Deficiency of IRTKS as an adaptor of insulin receptor leads to insulin resistance

Cell research, 2013-11, Vol.23 (11), p.1310-1321

2013

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Epidemiologic differences in esophageal cancer between Asian and Western populations

Ai zheng, 2012-06, Vol.31 (6), p.281-286

2012

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Strained and strain-relaxed epitaxial Ge 1− x Sn x alloys on Si(100) substrates

Chinese physics B, 2011-06, Vol.20 (6), p.68103

2011

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Minimally invasive thalamic hematoma drainage can improve the six-month outcome of thalamic hemorrhage

Journal of geriatric cardiology : JGC, 2017-04, Vol.14 (4), p.266-273

2017

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Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy

Wuli xuebao, 2011, Vol.60 (2), p.28101

2011

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Dynamic behaviors of rockslides subjected to brittle failure of locked segments

Experimental study on the failure characteristics and damage evolution of sandstones from typical buried depths in high in situ stress area

A comparison of mechanical properties and failure processes of saturated and unsaturated slate from Sichuan-Tibet Plateau area, China

Spatial-temporal distribution of debris flow impact pressure on rigid barrier

Variational quantum imaginary time evolution for matrix product state Ansatz with tests on transcorrelated Hamiltonians

Improved optimization for the neural-network quantum states and tests on the chromium dimer

A Nonstochastic Optimization Algorithm for Neural-Network Quantum States

Calculation of the ultimate depth of a scour pit after debris flow through drainage canal ribs

Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

Geothermal characteristics of the Xianshuihe fault zone and their engineering influence on tunnel construction

Energy evolution and distribution law of rock under thermal mechanical coupling

Strained and strain-relaxed epitaxial Ge1−xSnx alloys on Si(100) substrates

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser

High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy

Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R

Lattice constant deviation from Vegard's law in GeSn alloys

Theoretical study of the optical gain characteristics of a Ge sub(1-x)Sn sub(x) alloy for a short-wave infrared laser

Theoretical study of the optical gain characteristics of a Ge 1− x Sn x alloy for a short-wave infrared laser

Deficiency of IRTKS as an adaptor of insulin receptor leads to insulin resistance

Epidemiologic differences in esophageal cancer between Asian and Western populations

Strained and strain-relaxed epitaxial Ge 1− x Sn x alloys on Si(100) substrates

Minimally invasive thalamic hematoma drainage can improve the six-month outcome of thalamic hemorrhage

Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy

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