UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Identification of the Structures and Sources of Shockley‐Type In‐Grown Stacking Faults in 4H‐SiC Epilayers

Crystal research and technology (1979), 2018-09, Vol.53 (9), p.n/a

2018

Volltextzugriff (PDF)

Optoelectronic platform and technology

Frontiers of information technology & electronic engineering, 2019-04, Vol.20 (4), p.439-457

2019

Volltextzugriff (PDF)

Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JG08-08JG08-4

2013

Volltextzugriff (PDF)

Silicon carbide and graphene based UV-IR dual-color detector

Optoelectronics letters, 2019-05, Vol.15 (3), p.170-173

2019

Volltextzugriff (PDF)

Self-catalyzed metal organic chemical vapor deposition growth of vertical β-Ga2O3 nanowire arrays

Nanotechnology, 2020-01, Vol.31 (2), p.02LT01-02LT01

2020

Volltextzugriff (PDF)

Oxyresveratrol prevents lipopolysaccharide/d-galactosamine-induced acute liver injury in mice

International immunopharmacology, 2018-03, Vol.56, p.105-112

2018

Volltextzugriff (PDF)

Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

Chinese physics B, 2012-10, Vol.21 (10), p.516-521

孙云飞孙建东张晓渝秦华张宝顺吴东岷

2012

Volltextzugriff (PDF)

A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

Chinese physics letters, 2013-10, Vol.30 (10), p.104205-1-104205-4, Article 104205

2013

Volltextzugriff (PDF)

Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor

Wuli xuebao, 2020-05, Vol.69 (9), p.98501

2020

Volltextzugriff (PDF)

Modeling an antenna-coupled graphene field-effect terahertz detector

Applied physics letters, 2013-10, Vol.103 (17)

2013

Volltextzugriff (PDF)

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Chinese physics B, 2014-06, Vol.23 (6), p.629-634

杨静赵德刚江德生刘宗顺陈平李亮吴亮亮乐伶聪李晓静何晓光王辉朱建军张书明张宝顺杨辉

2014

Volltextzugriff (PDF)

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Chinese physics B, 2013-09, Vol.22 (9), p.671-675, Article 098801

杨静赵德刚江德生刘宗顺陈平李亮吴亮亮乐伶聪李晓静何晓光王辉朱建军张书明张宝顺杨辉

2013

Volltextzugriff (PDF)

Effect of 8-alkylberberine homologues on erythrocyte membrane

Indian journal of experimental biology, 2011-05, Vol.49 (5), p.319-323

2011

Volltextzugriff (PDF)

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p—i—n avalanche photodiodes

Chinese physics B, 2014-02, Vol.23 (2), p.028503-1-028503-5

2014

Volltextzugriff (PDF)

Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors

Chinese physics letters, 2012-06, Vol.29 (6), p.60701-1-060701-3

2012

Volltextzugriff (PDF)

Ion implantation isolation based micro-light-emitting diode device array properties

Wuli xuebao, 2020-01, Vol.69 (2), p.27802

2020

Volltextzugriff (PDF)

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

Chinese physics B, 2011-12, Vol.20 (12), p.400-403

乐伶聪赵德刚吴亮亮邓懿江德生朱建军刘宗顺王辉张书明张宝顺杨辉

2011

Volltextzugriff (PDF)

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

Chinese physics letters, 2011-07, Vol.28 (7), p.77202-1-077202-4

2011

Volltextzugriff (PDF)

AlGaN/GaN MIS-HEMTs of Very-Low }} Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

IEEE electron device letters, 2017-02, Vol.38 (2), p.236-239

2017

Volltextzugriff (PDF)

High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics

Wuli xuebao, 2017-10, Vol.66 (19), p.197301

2017

Volltextzugriff (PDF)

Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate

Faguang xuebao, 2014, Vol.35 (6), p.727-731

2014

Volltextzugriff (PDF)

Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials

Faguang xuebao, 2014, Vol.35 (7), p.830-834

2014

Volltextzugriff (PDF)

Synthesis and Antimicrobial Activity of 8-Alkylpalmatine Derivatives

Letters in drug design & discovery, 2011-06, Vol.8 (5), p.464-468

2011

Volltextzugriff (PDF)

Effects of the periodicity of the subwavelength hole arrays and hole shape of a thin gold film on the optical transmission characteristics

Optoelectronics letters, 2010-05, Vol.6 (3), p.211-213

2010

Volltextzugriff (PDF)

Study on interaction between plasmid DNA and berberine derivatives with aliphatic chain by fluorescence analysis

Pharmacognosy Magazine, 2014-04, Vol.10 (38), p.97-100

2014

Volltextzugriff (PDF)

1 – 25 von 136

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(105)
Mit Volltextzugriff
(97)

Publikationsform

Sprache

Englisch
(110)
Chinesisch
(36)

Erscheinungsjahr

n.n

Thema

Science & Technology
(62)
Physical Sciences
(33)
Physics
(24)
Life Sciences & Biomedicine
(18)
Technology
(17)
Physics, Multidisciplinary
(16)
Materials Science
(13)
Humans
(10)
Male
(10)
Materials Science, Multidisciplinary
(10)
Gallium Nitrides
(9)
Engineering
(8)
Animals
(7)
Female
(7)
Mice
(6)
Physics, Applied
(6)
Adult
(5)
Aged
(5)
Middle Aged
(5)
Optics
(5)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Faguang Xuebao
(10)
Chinese Physics Letters
(8)
Wuli Xuebao
(8)
Materials Science Forum
(6)
求是
(6)
Chinese Physics B
(5)
Heart
(5)
Advanced Materials Research
(4)
Applied Mechanics And Materials
(3)
Guang Zi Xue Bao = Acta Photonica Sinica
(3)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Identification of the Structures and Sources of Shockley‐Type In‐Grown Stacking Faults in 4H‐SiC Epilayers

Optoelectronic platform and technology

Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode

Silicon carbide and graphene based UV-IR dual-color detector

Self-catalyzed metal organic chemical vapor deposition growth of vertical β-Ga2O3 nanowire arrays

Oxyresveratrol prevents lipopolysaccharide/d-galactosamine-induced acute liver injury in mice

Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors

A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor

Modeling an antenna-coupled graphene field-effect terahertz detector

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Effect of 8-alkylberberine homologues on erythrocyte membrane

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p—i—n avalanche photodiodes

Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors

Ion implantation isolation based micro-light-emitting diode device array properties

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure

AlGaN/GaN MIS-HEMTs of Very-Low }} Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics

Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate

Influence of Growth Time of AlN Interfacial Layer on Electrical Properties of AlGaN/AlN/GaN HEMT Materials

Synthesis and Antimicrobial Activity of 8-Alkylpalmatine Derivatives

Effects of the periodicity of the subwavelength hole arrays and hole shape of a thin gold film on the optical transmission characteristics

Study on interaction between plasmid DNA and berberine derivatives with aliphatic chain by fluorescence analysis

Suchergebnisse filtern