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Dynamic Characteristics Analysis and Finite Element Simulation of an Ancient Timber Building under Environmental Excitation

Buildings (Basel), 2024-03, Vol.14 (3), p.771

2024

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High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1554-1560

2017

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Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors

Journal of applied physics, 2018-07, Vol.124 (3)

2018

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Detection of HER-3 with an AlGaN/GaN-Based Ion-Sensitive Heterostructure Field Effect Transistor Biosensor

Micromachines (Basel), 2023-06, Vol.14 (6), p.1186

2023

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GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid

Journal of crystal growth, 2015-09, Vol.426, p.168-172

2015

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Superfluorescence of Sub-Band States in C-Plane In0.1Ga0.9N/GaN Multiple-QWs

Nanomaterials (Basel, Switzerland), 2022-01, Vol.12 (3), p.327

2022

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Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

Materials science in semiconductor processing, 2017-08, Vol.67, p.141-146

2017

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Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3375-3382

2008

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All-solid-state AlGaN/GaN-based ion-sensitive heterostructure field effect transistor pH sensor microprobe encapsulated in medical needle

AIP advances, 2022-09, Vol.12 (9), p.095013-095013-6

2022

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120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode

Micromachines (Basel), 2022-07, Vol.13 (8), p.1172

2022

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Quantized Microcavity Polariton Lasing Based on InGaN Localized Excitons

Nanomaterials (Basel, Switzerland), 2024-07, Vol.14 (14), p.1197

2024

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A chip-level electrothermal-coupled design model for high-power light-emitting diodes

Journal of applied physics, 2010-03, Vol.107 (5)

2010

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Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates

Journal of crystal growth, 2013-08, Vol.376, p.23-27

2013

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An Integrated Neural Optrode with Modification of Polymer-Carbon Composite Films for Suppression of the Photoelectric Artifacts

ACS omega, 2024-07, Vol.9 (30), p.33119-33129

2024

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Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate

Chinese Journal of Electronics, 2016-07, Vol.25 (4), p.672-677

2016

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Double-Sided Sapphire Optrodes with Conductive Shielding Layers to Reduce Optogenetic Stimulation Artifacts

Micromachines (Basel), 2022-10, Vol.13 (11), p.1836

2022

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Low capacitance AlGaN/GaN based air-bridge structure planar Schottky diode with a half through-hole

AIP advances, 2020-04, Vol.10 (4), p.045219-045219-5

2020

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Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors

Physica status solidi. A, Applications and materials science, 2016-10, Vol.213 (10), p.2693-2698

2016

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Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure

Frontiers in physics, 2022-11, Vol.10

2022

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AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer

Advances in Condensed Matter Physics, 2022-04, Vol.2022, p.1-7

2022

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Influence of the Surface Material and Illumination upon the Performance of a Microelectrode/Electrolyte Interface in Optogenetics

Micromachines (Basel), 2021-08, Vol.12 (9), p.1061

2021

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Improving the Extraction Efficiency of Planar GaN-Based Blue Light-Emitting Diodes via Optimizing Indium Tin Oxide Nanodisc Arrays

Journal of display technology, 2016-12, Vol.12 (12), p.1588-1593

2016

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Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111)

Advances in Condensed Matter Physics, 2021-04, Vol.2021, p.1-5

2021

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The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

Journal of materials science. Materials in electronics, 2015-12, Vol.26 (12), p.9753-9758

2015

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Analysis and experiment of the sensitivity of AlGaN/GaN based heterostructure all-solid-state pH sensor

AIP advances, 2019-09, Vol.9 (9), p.095066-095066-5

2019

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Dynamic Characteristics Analysis and Finite Element Simulation of an Ancient Timber Building under Environmental Excitation

High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors

Detection of HER-3 with an AlGaN/GaN-Based Ion-Sensitive Heterostructure Field Effect Transistor Biosensor

GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid

Superfluorescence of Sub-Band States in C-Plane In0.1Ga0.9N/GaN Multiple-QWs

Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes

All-solid-state AlGaN/GaN-based ion-sensitive heterostructure field effect transistor pH sensor microprobe encapsulated in medical needle

120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode

Quantized Microcavity Polariton Lasing Based on InGaN Localized Excitons

A chip-level electrothermal-coupled design model for high-power light-emitting diodes

Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates

An Integrated Neural Optrode with Modification of Polymer-Carbon Composite Films for Suppression of the Photoelectric Artifacts

Current Spreading Effects in Vertical GaN-Based Light-Emitting Diode on Si(111) Substrate

Double-Sided Sapphire Optrodes with Conductive Shielding Layers to Reduce Optogenetic Stimulation Artifacts

Low capacitance AlGaN/GaN based air-bridge structure planar Schottky diode with a half through-hole

Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure

AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer

Influence of the Surface Material and Illumination upon the Performance of a Microelectrode/Electrolyte Interface in Optogenetics

Improving the Extraction Efficiency of Planar GaN-Based Blue Light-Emitting Diodes via Optimizing Indium Tin Oxide Nanodisc Arrays

Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111)

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

Analysis and experiment of the sensitivity of AlGaN/GaN based heterostructure all-solid-state pH sensor

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