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Fever, convulsions, and rash: a case report of neonatal lupus erythematosus with macrophage activation syndrome

Frontiers in pediatrics, 2024-08, Vol.12, p.1381493

2024

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Preliminary Study on the Clinical and Genetic Characteristics of Hereditary Spherocytosis in 15 Chinese Children

Frontiers in genetics, 2021-03, Vol.12, p.652376-652376

2021

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Dopant Segregation and Nickel Stanogermanide Contact Formation on p+Ge0.947Sn0.053 Source/Drain

IEEE electron device letters, 2012-05, Vol.33 (5), p.634-636

2012

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Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1852-1860

2013

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Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2135-2141

2013

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Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.02BC04-02BC04-6

2012

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Dopant Segregation and Nickel Stanogermanide Contact Formation on \hbox^ \hbox\hbox Source/Drain

IEEE electron device letters, 2012-05, Vol.33 (5), p.634-636

2012

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Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

Applied physics letters, 2011-04, Vol.98 (15), p.153502-153502-3

2011

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Simulation of tunneling field-effect transistors with extended source structures

Journal of applied physics, 2012-06, Vol.111 (11)

2012

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Temperature-insensitive tilt sensor with strain-chirped fiber Bragg gratings

IEEE photonics technology letters, 2005-11, Vol.17 (11), p.2394-2396

2005

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High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules

2011 International Electron Devices Meeting, 2011, p.16.7.1-16.7.3

2011

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Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon--Germanium/Germanium Heterostructure

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4), p.04DJ07-04DJ07-4

2011

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AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CF06-04CF06-5

2013

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AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm$^{2}$ Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process

Applied physics express, 2012-06, Vol.5 (6), p.66501

2012

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Single Crystalline Germanium-Lead Alloy on Germanium Substrate Formed by Pulsed Laser Epitaxy

ECS solid state letters, 2014-05, Vol.3 (8), p.P91-P93

2014

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Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon–Germanium/Germanium Heterostructure

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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High mobility germanium-tin (Ge0.930Sn0.070) P-MOSFETs with surface passivation by silicon atomic layer epitaxy

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, p.147-148

2014

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Effect of Fin Doping Concentration on the Electrical Characteristics of Germanium-on-Insulator Multi-Gate Field-Effect Transistor

ECS transactions, 2013, Vol.50 (9), p.23-30

2013

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Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, p.79-80

2014

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(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2013, p.1-2

2013

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Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, 2011, p.1-2

2011

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Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2013, p.1-2

2013

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Enhancement of TFET performance using dopant profile-steepening implant and source dopant concentration engineering at tunneling junction

2010 Silicon Nanoelectronics Workshop, 2010, p.1-2

2010

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A new self-aligned contact technology for III-V MOSFETs

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.152-153

2010

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Fever, convulsions, and rash: a case report of neonatal lupus erythematosus with macrophage activation syndrome

Preliminary Study on the Clinical and Genetic Characteristics of Hereditary Spherocytosis in 15 Chinese Children

Dopant Segregation and Nickel Stanogermanide Contact Formation on p+Ge0.947Sn0.053 Source/Drain

Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate

Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Dopant Segregation and Nickel Stanogermanide Contact Formation on \hbox^ \hbox\hbox Source/Drain

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

Simulation of tunneling field-effect transistors with extended source structures

Temperature-insensitive tilt sensor with strain-chirped fiber Bragg gratings

High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules

Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon--Germanium/Germanium Heterostructure

AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process

AlGaN/GaN-on-Silicon Metal–Oxide–Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm$^{2}$ Using a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process

Single Crystalline Germanium-Lead Alloy on Germanium Substrate Formed by Pulsed Laser Epitaxy

Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon–Germanium/Germanium Heterostructure

High mobility germanium-tin (Ge0.930Sn0.070) P-MOSFETs with surface passivation by silicon atomic layer epitaxy

Effect of Fin Doping Concentration on the Electrical Characteristics of Germanium-on-Insulator Multi-Gate Field-Effect Transistor

Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy

(110)-oriented germanium-tin (Ge0.97Sn0.03) P-channel MOSFETs

Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

Germanium-Tin (GeSn) N-channel MOSFETs with low temperature silicon surface passivation

Enhancement of TFET performance using dopant profile-steepening implant and source dopant concentration engineering at tunneling junction

A new self-aligned contact technology for III-V MOSFETs

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