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Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire

Journal of crystal growth, 2008-05, Vol.310 (10), p.2432-2438

2008

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Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

Journal of crystal growth, 2011-01, Vol.315 (1), p.5-9

2011

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Analysis of doping induced wafer bow during GaN:Si growth on sapphire

Journal of applied physics, 2012-08, Vol.112 (3)

2012

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Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements

Journal of crystal growth, 2007, Vol.298, p.202-206

2007

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Advanced in-situ control for III-nitride RF power device epitaxy

Semiconductor science and technology, 2018-04, Vol.33 (4), p.45014

2018

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On the AlAs/GaAs (001) interface dielectric anisotropy

Thin solid films, 2005-01, Vol.472 (1), p.261-269

2005

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AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices

Journal of crystal growth, 2007, Vol.298, p.23-27

2007

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Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using an in situ curvature sensor

Semiconductor science and technology, 2006-09, Vol.21 (9), p.L45-L48

2006

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Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry

Progress in crystal growth and characterization of materials, 1997, Vol.35 (1), p.27-98

Zettler, J.-T.

1997

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Routine growth of InP based device structures using process calibration with optical in-situ techniques

Journal of crystal growth, 2004-12, Vol.272 (1), p.118-124

2004

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Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy

Journal of crystal growth, 2004-12, Vol.272 (1), p.143-147

2004

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Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE

Journal of crystal growth, 2004-12, Vol.272 (1), p.81-86

2004

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In situ determination and control of AlGaInP composition during MOVPE growth

Journal of crystal growth, 2006-01, Vol.287 (2), p.637-641

2006

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MOVPE growth and in situ characterization of GaN layers on sapphire substrates

Physica status solidi. A, Applied research, 2004-01, Vol.201 (2), p.312-319

2004

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In situ monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry

Journal of applied physics, 2000-10, Vol.88 (7), p.4085-4090

2000

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Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides

Physica Status Solidi (b), 2005-11, Vol.242 (13), p.2581-2586

2005

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Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE

Journal of crystal growth, 2002-04, Vol.240 (1-2), p.87-97

2002

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Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance

Journal of crystal growth, 2004-12, Vol.272 (1), p.76-80

2004

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Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques

Journal of crystal growth, 1998-12, Vol.195 (1), p.151-162

1998

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Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors

Journal of crystal growth, 2003-02, Vol.248, p.235-239

2003

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Influence of the reconstruction of GaAs (0 0 1) on the electro-optical bulk properties

Journal of crystal growth, 2003-02, Vol.248, p.254-258

2003

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In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry

Applied physics letters, 2006-03, Vol.88 (10)

2006

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Real-time analysis of III–V-semiconductor epitaxial growth

Applied surface science, 1996-07, Vol.100, p.465-477

1996

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Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques

Journal of crystal growth, 2000-12, Vol.221 (1), p.592-598

2000

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Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

Journal of crystal growth, 2003-02, Vol.248, p.240-243

2003

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Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire

Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

Analysis of doping induced wafer bow during GaN:Si growth on sapphire

Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements

Advanced in-situ control for III-nitride RF power device epitaxy

On the AlAs/GaAs (001) interface dielectric anisotropy

AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices

Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using an in situ curvature sensor

Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry

Routine growth of InP based device structures using process calibration with optical in-situ techniques

Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy

Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE

In situ determination and control of AlGaInP composition during MOVPE growth

MOVPE growth and in situ characterization of GaN layers on sapphire substrates

In situ monitoring of GaN metal-organic vapor phase epitaxy by spectroscopic ellipsometry

Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE

Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance

Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques

Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors

Influence of the reconstruction of GaAs (0 0 1) on the electro-optical bulk properties

In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry

Real-time analysis of III–V-semiconductor epitaxial growth

Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques

Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

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