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Self-assembled growth of BiFeO3 meso-octahedral particles synthesized by a facile surfactant-free hydrothermal method

Journal of crystal growth, 2016-01, Vol.434, p.42-46

2016

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Large positive room temperature magnetoresistance in nanogranular FeCo–Si–N thin films

Materials letters, 2013-11, Vol.110, p.27-30

2013

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Growth of (1 0 1¯ 3¯ ) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

Journal of crystal growth, 2009-08, Vol.311 (17), p.4153-4157

2009

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Emitter-Size Effects and Ultimate Scalability of InP:GaInP/GaAsSb/InP DHBTs

IEEE electron device letters, 2008-06, Vol.29 (6), p.546-548

2008

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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching

Journal of crystal growth, 2011, Vol.314 (1), p.141-145

2011

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Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres

Materials letters, 2012-02, Vol.68, p.327-330

2012

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Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

Solid-state electronics, 2005-08, Vol.49 (8), p.1387-1390

2005

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Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1−x DHBTs

Solid-state electronics, 2008-08, Vol.52 (8), p.1202-1206

2008

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Magnetoresistance effects associated with various electric conduction mechanisms in nanostructured [C/FeCo]n multilayers

Journal of magnetism and magnetic materials, 2017-01, Vol.421, p.39-43

2017

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Cathodoluminescence and Raman research of V-shape inverted pyramid in HVPE grown GaN film

Materials letters, 2007-07, Vol.61 (18), p.3882-3885

2007

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Magnetoresistance effects associated with various electric conduction mechanisms in nanostructured [C/FeCo] multilayers

Journal of magnetism and magnetic materials, 2017-01, Vol.421, p.39-43

2017

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The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE

Journal of crystal growth, 2005-07, Vol.280 (3-4), p.346-351

2005

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Effect of impedance on a compressor driving pulse tube refrigerator

Applied thermal engineering, 2017-09, Vol.124, p.688-694

2017

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Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition

Journal of crystal growth, 2018-12, Vol.504, p.7-12

2018

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Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching

Journal of crystal growth, 2020-02, Vol.531, p.125359, Article 125359

2020

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Bullous pemphigoid associated with silicosis

Journal of the European Academy of Dermatology and Venereology, 2018-01, Vol.32 (1), p.e1-e2

2018

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Pseudospin in Si -doped InAlAs/InGaAs/InAlAs single quantum well

Solid state communications, 2007-05, Vol.142 (7), p.393-397

2007

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The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates

Journal of crystal growth, 2019-02, Vol.507, p.175-179

2019

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Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates

Journal of crystal growth, 2020-02, Vol.531, p.125362, Article 125362

2020

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Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness

Journal of crystal growth, 2005-10, Vol.284 (1), p.20-27

2005

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Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition

Journal of crystal growth, 2019-02, Vol.507 (C), p.283-287

2019

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Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In 0.52 Al 0.48 As/In 0.65 Ga 0.35 As heterostructures: Experiment and calculation

Physica. E, Low-dimensional systems & nanostructures, 2016-09, Vol.83, p.114-118

2016

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Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers

Journal of crystal growth, 2019-01, Vol.505, p.1-4

2019

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A split-face treatment of adult colloid milium using a non-ablative, 1550-nm, erbium-glass fractional laser

Journal of the European Academy of Dermatology and Venereology, 2016-03, Vol.30 (3), p.490-491

2016

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Visible blind p+–π–n−–n+ ultraviolet photodetectors based on 4H–SiC homoepilayers

Microelectronics, 2006-11, Vol.37 (11), p.1396-1398

2006

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Self-assembled growth of BiFeO3 meso-octahedral particles synthesized by a facile surfactant-free hydrothermal method

Large positive room temperature magnetoresistance in nanogranular FeCo–Si–N thin films

Growth of (1 0 1¯ 3¯ ) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

Emitter-Size Effects and Ultimate Scalability of InP:GaInP/GaAsSb/InP DHBTs

Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching

Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1−x DHBTs

Magnetoresistance effects associated with various electric conduction mechanisms in nanostructured [C/FeCo]n multilayers

Cathodoluminescence and Raman research of V-shape inverted pyramid in HVPE grown GaN film

Magnetoresistance effects associated with various electric conduction mechanisms in nanostructured [C/FeCo] multilayers

The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE

Effect of impedance on a compressor driving pulse tube refrigerator

Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition

Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching

Bullous pemphigoid associated with silicosis

Pseudospin in Si -doped InAlAs/InGaAs/InAlAs single quantum well

The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates

Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates

Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness

Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition

Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In 0.52 Al 0.48 As/In 0.65 Ga 0.35 As heterostructures: Experiment and calculation

Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers

A split-face treatment of adult colloid milium using a non-ablative, 1550-nm, erbium-glass fractional laser

Visible blind p+–π–n−–n+ ultraviolet photodetectors based on 4H–SiC homoepilayers

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