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AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

Applied physics letters, 2018-01, Vol.112 (4)

2018

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Stress control of tensile-strained In1−xGaxP nanomechanical string resonators

Applied physics letters, 2018-11, Vol.113 (20)

2018

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High Beam Quality in Broad Area Lasers via Suppression of Lateral Carrier Accumulation

IEEE photonics technology letters, 2015-09, Vol.27 (17), p.1809-1812

2015

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Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

Journal of applied physics, 2017-09, Vol.122 (12)

2017

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Effect of the GaN:Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes

IEEE photonics technology letters, 2017-12, Vol.29 (24), p.2222-2225

2017

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An influence of the local strain on cathodoluminescence of GaN/AlxGa1−xN nanowire structures

Journal of applied physics, 2016-11, Vol.120 (19)

2016

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Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth

Journal of crystal growth, 2014-09, Vol.402, p.222-229

2014

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Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces

Semiconductor science and technology, 2013-12, Vol.28 (12), p.125015

2013

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UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates

IEEE photonics technology letters, 2015-09, Vol.27 (18), p.1969-1972

2015

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Spatial inhomogeneities in AlxGa1−xN quantum wells induced by the surface morphology of AlN sapphire templates

Semiconductor science and technology, 2015-10, Vol.30 (11)

2015

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Semi-polar (112¯2)-GaN templates grown on 100 mm trench-patterned r-plane sapphire

physica status solidi (b), 2015-05, Vol.252 (5), p.1189-1194

2015

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Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire

Journal of crystal growth, 2015-03, Vol.414, p.32-37

2015

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AlGaN Metal--Semiconductor--Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JF03-08JF03-4

2013

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Boule-like growth of GaN by HVPE

Physica status solidi. C, 2010-01, Vol.7 (1), p.28-31

2010

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Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching

Journal of crystal growth, 2008-03, Vol.310 (5), p.955-958

2008

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Reduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors

Optics letters, 2018-08, Vol.43 (15), p.3522-3525

2018

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Defect analysis in AlGaN layers on AIN templates obtained by epitaxial lateral overgrowth

Journal of crystal growth, 2014-09, Vol.402, p.222-229

2014

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Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs

IEEE journal of selected topics in quantum electronics, 2017-03, Vol.23 (2), p.29-36

2017

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Stress control of tensile-strained In1− x Ga x P nanomechanical string resonators

Applied physics letters, 2018-11, Vol.113 (20)

2018

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CBr sub(4)-based in-situ etching of GaAs, assisted with TMAl and TMGa

Journal of crystal growth, 2016-01, Vol.434, p.116-122

2016

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Semi-polar [Formulaomitted]-GaN templates grown on 100mm trench-patterned r-plane sapphire

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1189-1194

2015

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On the formation of cleaved mirror facets of GaN-based laser diodes—A comparative study of diamond-tip edge-scribing and laser scribing

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2016-07, Vol.34 (4)

2016

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Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers

IEEE photonics technology letters, 2005-05, Vol.17 (5), p.962-964

2005

Volltextzugriff (PDF)

How does external feedback cause AlGaAs-based diode lasers to degrade?

Applied physics letters, 2013-01, Vol.102 (2)

2013

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AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

Stress control of tensile-strained In1−xGaxP nanomechanical string resonators

High Beam Quality in Broad Area Lasers via Suppression of Lateral Carrier Accumulation

Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

Effect of the GaN:Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs

Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes

An influence of the local strain on cathodoluminescence of GaN/AlxGa1−xN nanowire structures

Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth

Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces

UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates

Spatial inhomogeneities in AlxGa1−xN quantum wells induced by the surface morphology of AlN sapphire templates

Semi-polar (112¯2)-GaN templates grown on 100 mm trench-patterned r-plane sapphire

Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire

AlGaN Metal--Semiconductor--Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region

Boule-like growth of GaN by HVPE

Determination of dislocation density in MOVPE grown GaN layers using KOH defect etching

Reduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors

Defect analysis in AlGaN layers on AIN templates obtained by epitaxial lateral overgrowth

Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs

Stress control of tensile-strained In1− x Ga x P nanomechanical string resonators

CBr sub(4)-based in-situ etching of GaAs, assisted with TMAl and TMGa

Semi-polar [Formulaomitted]-GaN templates grown on 100mm trench-patterned r-plane sapphire

On the formation of cleaved mirror facets of GaN-based laser diodes—A comparative study of diamond-tip edge-scribing and laser scribing

Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers

How does external feedback cause AlGaAs-based diode lasers to degrade?

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