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High quality AlGaN grown on ELO AlN/sapphire templates

Journal of crystal growth, 2013-08, Vol.377, p.32-36

2013

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High-quality AlN grown on a thermally decomposed sapphire surface

Journal of crystal growth, 2017-12, Vol.479, p.16-21

2017

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Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers

IEEE photonics technology letters, 2005-05, Vol.17 (5), p.962-964

2005

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Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate

Semiconductor science and technology, 2017-11, Vol.32 (12), p.12

2017

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Controlled coalescence of MOVPE grown AlN during lateral overgrowth

Journal of crystal growth, 2013-04, Vol.368, p.83-86

2013

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Degradation of AlGaN-based metal-semiconductor-metal photodetectors

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCC21

2019

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Growth of AlGaN and AlN on patterned AlN/sapphire templates

Journal of crystal growth, 2011-01, Vol.315 (1), p.200-203

2011

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Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers

Semiconductor science and technology, 2019-01, Vol.34 (1), p.15005

2019

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AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates

Physica status solidi. A, Applications and materials science, 2013-03, Vol.210 (3), p.451-454

2013

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Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm

Journal of crystal growth, 2018-06, Vol.491, p.31-35

2018

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Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces

Semiconductor science and technology, 2015-12, Vol.31 (2)

2015

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Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN

Journal of crystal growth, 2019-01, Vol.505, p.69-73

2019

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Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth

Journal of crystal growth, 2017-03, Vol.462, p.18-23

2017

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Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes

Journal of crystal growth, 2014-04, Vol.391, p.46-51

2014

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Si Doping of GaN in Hydride Vapor-Phase Epitaxy

Journal of electronic materials, 2013-05, Vol.42 (5), p.820-825

2013

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Growth of laser diode structures with emission wavelength beyond 1100 nm for yellow-green emission by frequency conversion

Journal of crystal growth, 2015-03, Vol.414, p.205-209

2015

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Precision UV laser scribing for cleaving mirror facets of GaN-based laser diodes

Applied physics. A, Materials science & processing, 2016-04, Vol.122 (4), p.1-7, Article 396

2016

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Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes

Applied physics letters, 2014-10, Vol.105 (17)

2014

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MOVPE-grown AlxGa1−xAsyP1−y strain compensating layers on GaAs

Journal of crystal growth, 2013-05, Vol.370, p.150-153

2013

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Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process

Microelectronic engineering, 2016-08, Vol.161, p.63-68

2016

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Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells

Semiconductor science and technology, 2018-02, Vol.33 (3)

2018

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In-situ observation of InGaN quantum well decomposition during growth of laser diodes

Crystal research and technology (1979), 2015-06, Vol.50 (6), p.499-503

2015

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(Al,Ga)N overgrowth over AlN ridges oriented in [1120] and [1100] direction

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2022-2024

2011

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MOVPE growth of AlxGa1-xN with x ∼ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV-LEDs

Physica status solidi. C, 2014-04, Vol.11 (3-4), p.377-380

2014

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High quality AlGaN grown on ELO AlN/sapphire templates

High-quality AlN grown on a thermally decomposed sapphire surface

Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate

Controlled coalescence of MOVPE grown AlN during lateral overgrowth

Degradation of AlGaN-based metal-semiconductor-metal photodetectors

Growth of AlGaN and AlN on patterned AlN/sapphire templates

Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers

AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates

Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm

Defect distribution and compositional inhomogeneities in Al0.5Ga0.5N layers grown on stepped surfaces

Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN

Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth

Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes

Si Doping of GaN in Hydride Vapor-Phase Epitaxy

Growth of laser diode structures with emission wavelength beyond 1100 nm for yellow-green emission by frequency conversion

Precision UV laser scribing for cleaving mirror facets of GaN-based laser diodes

Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes

MOVPE-grown AlxGa1−xAsyP1−y strain compensating layers on GaAs

Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process

Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells

In-situ observation of InGaN quantum well decomposition during growth of laser diodes

(Al,Ga)N overgrowth over AlN ridges oriented in [1120] and [1100] direction

MOVPE growth of AlxGa1-xN with x ∼ 0.5 on epitaxial laterally overgrown AlN/sapphire templates for UV-LEDs

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