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First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

IEEE electron device letters, 2012-08, Vol.33 (8), p.1168-1170

2012

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IEEE_Xplore

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

IEEE electron device letters, 2011-07, Vol.32 (7), p.874-876

2011

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IEEE_Xplore

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

Journal of electronic materials, 2023-08, Vol.52 (8), p.5249-5255

2023

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GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV

Electronics letters, 2015-09, Vol.51 (19), p.1532-1534

2015

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Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

Applied physics letters, 2011-05, Vol.98 (22), p.223502-223502-3

2011

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Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band

IEEE microwave and wireless components letters, 2017-04, Vol.27 (4), p.419-421

2017

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IEEE_Xplore

Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate

IEEE electron device letters, 2011-09, Vol.32 (9), p.1230-1232

2011

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IEEE_Xplore

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

Electronics letters, 2011, Vol.47 (24), p.1345-1346

2011

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Micro-patterning of LiPON and lithium iron phosphate material deposited onto silicon nanopillars array for lithium ion solid state 3D micro-battery

Microelectronic engineering, 2011-10, Vol.88 (10), p.3172-3177

2011

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Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

Microelectronics and reliability, 2017-09, Vol.76-77, p.575-578

2017

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Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

IEEE electron device letters, 2012-09, Vol.33 (9), p.1258-1260

2012

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IEEE_Xplore

Single-channel 100 Gbit/s transmission using III–V UTC-PDs for future IEEE 802.15.3d wireless links in the 300 GHz band

Electronics letters, 2018-05, Vol.54 (10), p.638-640

2018

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High dynamic range single channel sampling of wideband RF signals using ultra-fast nanoscale photoconductive switching

Electronics letters, 2016-02, Vol.52 (3), p.237-239

2016

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Thermal management of electronic devices by composite materials integrated in silicon

Microelectronic engineering, 2014-09, Vol.127, p.28-33

2014

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A New Low Crosstalk InP Digital Optical Switch Based on Carrier-Induced Effects for 1.55- \mu m Applications

IEEE photonics technology letters, 2009-04, Vol.21 (8), p.546-548

2009

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IEEE_Xplore

2$\,\times\,$2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-$\mu$m Applications

IEEE photonics technology letters, 2009-10, Vol.21 (19), p.1357-1359

2009

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Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Electronics letters, 2007, Vol.43 (22), p.1234-1236, Article 1234

2007

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High thermally induced index variations with short response time in InP/GaInAsP/ InP waveguide Schottky diodes

Electronics letters, 2009, Vol.45 (15), p.802-803

2009

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Optical devices for ultra-compact photonic integrated circuits based on III-V/polymer nanowires

Optics express, 2007-04, Vol.15 (9), p.5333-5341, Article 5333

2007

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Low-loss InGaAsP∕InP submicron optical waveguides fabricated by ICP etching

Electronics letters, 2004, Vol.40 (14), p.865-866

2004

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Design Considerations for 1.3 $\mu$m GaNAsSb–GaAs High Speed and High Quantum Efficiency Waveguide Photodetectors

Journal of lightwave technology, 2009-07, Vol.27 (13), p.2518-2524

2009

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Design Considerations for 1.3 \mum GaNAsSb-GaAs High Speed and High Quantum Efficiency Waveguide Photodetectors

Journal of lightwave technology, 2009-07, Vol.27 (13), p.2518-2524

2009

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IEEE_Xplore

A Novel Bondpad report process for III–V semiconductor devices using full HSQ properties

Microelectronic engineering, 2009, Vol.86 (1), p.68-71

2009

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Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

Microelectronics and reliability, 2019-09, Vol.100-101, p.113388, Article 113388

2019

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GaAs/polymer optical nanowires : fabrication and characterisation

Electronics letters, 2006-02, Vol.42 (4), p.217-219

2006

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First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band

Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

Micro-patterning of LiPON and lithium iron phosphate material deposited onto silicon nanopillars array for lithium ion solid state 3D micro-battery

Degradation of InGaN-based MQW solar cells under 405 nm laser excitation

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

Single-channel 100 Gbit/s transmission using III–V UTC-PDs for future IEEE 802.15.3d wireless links in the 300 GHz band

High dynamic range single channel sampling of wideband RF signals using ultra-fast nanoscale photoconductive switching

Thermal management of electronic devices by composite materials integrated in silicon

A New Low Crosstalk InP Digital Optical Switch Based on Carrier-Induced Effects for 1.55- \mu m Applications

2$\,\times\,$2 InP Optical Switching Matrix Based on Carrier-Induced Effects for 1.55-$\mu$m Applications

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

High thermally induced index variations with short response time in InP/GaInAsP/ InP waveguide Schottky diodes

Optical devices for ultra-compact photonic integrated circuits based on III-V/polymer nanowires

Low-loss InGaAsP∕InP submicron optical waveguides fabricated by ICP etching

Design Considerations for 1.3 $\mu$m GaNAsSb–GaAs High Speed and High Quantum Efficiency Waveguide Photodetectors

Design Considerations for 1.3 \mum GaNAsSb-GaAs High Speed and High Quantum Efficiency Waveguide Photodetectors

A Novel Bondpad report process for III–V semiconductor devices using full HSQ properties

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

GaAs/polymer optical nanowires : fabrication and characterisation

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