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High-resolution characterization of the forbidden Si 200 and Si 222 reflections

Journal of applied crystallography, 2015-04, Vol.48 (2), p.528-532

Zaumseil, Peter

2015

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Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD

Solid-state electronics, 2011-06, Vol.60 (1), p.2-6

2011

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Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

Scientific reports, 2016-06, Vol.6 (1), p.28155-28155, Article 28155

2016

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GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

ACS photonics, 2018-11, Vol.5 (11), p.4628-4636

2018

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Low threading dislocation Ge on Si by combining deposition and etching

Thin solid films, 2012-02, Vol.520 (8), p.3216-3221

2012

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Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Advanced science, 2018-06, Vol.5 (6), p.1700955-n/a

2018

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Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory

ACS applied materials & interfaces, 2014-04, Vol.6 (7), p.5056-5060

2014

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Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

Journal of applied physics, 2017-05, Vol.121 (20)

2017

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X‐ray investigation of strained epitaxial layer systems by reflections in skew geometry

Journal of applied crystallography, 2017-04, Vol.50 (2), p.475-480

Zaumseil, Peter

2017

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Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure

ACS applied materials & interfaces, 2016-10, Vol.8 (40), p.26948-26955

2016

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Monolithic integrated SAW filter based on AlN for high-frequency applications

Semiconductor science and technology, 2013-06, Vol.28 (6), p.65013

2013

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Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X‑ray Diffraction Microscopy

ACS applied materials & interfaces, 2015-05, Vol.7 (17), p.9031-9037

2015

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Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

Applied physics letters, 2015-02, Vol.106 (6)

2015

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Nachhaltigkeit und Unternehmensbesteuerung

Nachhaltigkeit und Innovation in Internen und Externen Unternehmensbeziehungen, 2023, p.415-424

2023

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Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X‑ray Nanodiffraction

ACS applied materials & interfaces, 2015-12, Vol.7 (48), p.26696-26700

2015

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High-resolution characterization of the forbidden Si 200 and Si 222 reflections1

Journal of applied crystallography, 2015-03, Vol.48 (Pt 2), p.528-532

Zaumseil, Peter

2015

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Abrupt SiGe and Si Profile Fabrication by Introducing Carbon Delta Layer

ECS journal of solid state science and technology, 2017, Vol.6 (8), p.P531-P534

2017

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Der Aufsichtsrat im System der Corporate Governance: Betriebswirtschaftliche und juristische Perspektiven

1. Aufl., 2011

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Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer

Applied physics express, 2016-03, Vol.9 (3), p.31201

2016

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Ni(SiGeSn) Metal Contact Formation on Low Bandgap Strained (Si)Ge(Sn) Semiconductors

ECS transactions, 2014-08, Vol.64 (6), p.107-112

2014

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Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells

Physical review materials, 2020-02, Vol.4 (2), Article 024601

2020

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Fast in situ X‐ray analysis of Ni silicide formation

physica status solidi (b), 2017-07, Vol.254 (7), p.n/a

2017

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Influence of annealing conditions on threading dislocation density in Ge deposited on Si by reduced pressure chemical vapor deposition

Semiconductor science and technology, 2018-12, Vol.33 (12), p.124007

2018

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Stoichiometry–structure correlation of epitaxial Ce1−Pr O2− (x=0−1) thin films on Si(111)

Journal of crystal growth, 2012-09, Vol.355 (1), p.159-165

2012

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Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

Advanced functional materials, 2019-04, Vol.29 (14), p.n/a

2019

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High-resolution characterization of the forbidden Si 200 and Si 222 reflections

Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

Low threading dislocation Ge on Si by combining deposition and etching

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory

Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

X‐ray investigation of strained epitaxial layer systems by reflections in skew geometry

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure

Monolithic integrated SAW filter based on AlN for high-frequency applications

Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X‑ray Diffraction Microscopy

Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

Nachhaltigkeit und Unternehmensbesteuerung

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X‑ray Nanodiffraction

High-resolution characterization of the forbidden Si 200 and Si 222 reflections1

Abrupt SiGe and Si Profile Fabrication by Introducing Carbon Delta Layer

Der Aufsichtsrat im System der Corporate Governance: Betriebswirtschaftliche und juristische Perspektiven

Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer

Ni(SiGeSn) Metal Contact Formation on Low Bandgap Strained (Si)Ge(Sn) Semiconductors

Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells

Fast in situ X‐ray analysis of Ni silicide formation

Influence of annealing conditions on threading dislocation density in Ge deposited on Si by reduced pressure chemical vapor deposition

Stoichiometry–structure correlation of epitaxial Ce1−Pr O2− (x=0−1) thin films on Si(111)

Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

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