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Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

Applied physics letters, 2009-11, Vol.95 (21)

2009

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Photocurrent Amplification at Carbon Nanotube-Metal Contacts

Advanced materials (Weinheim), 2006-01, Vol.18 (1), p.98-103

2006

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New Organic Phototransistor With Bias-Modulated Photosensitivity and Bias-Enhanced Memory Effect

IEEE electron device letters, 2009-07, Vol.30 (7), p.721-723

2009

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Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2343-2346

2005

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Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

Physica status solidi. C, 2010-04, Vol.7 (3-4), p.583-587

2010

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High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

Applied physics letters, 2009-07, Vol.95 (4)

2009

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Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors

Vacuum, 2002-09, Vol.67 (3), p.641-645

2002

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Wide bandgap n-type and p-type semiconductor porous junction devices as photovoltaic cells

Journal of physics. D, Applied physics, 2011-10, Vol.44 (40), p.405103-1-6

2011

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A W-spacer GOLD TFT with high performance and high reliability

Vacuum, 2002-09, Vol.67 (3), p.595-598

2002

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Dimensional effects on the reliability of polycrystalline silicon thin-film transistors

Microelectronics and reliability, 2000-08, Vol.40 (8-10), p.1479-1483

2000

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Defect selective passivation in GaN epitaxial growth and its applicationto light emitting diodes

Applied physics letters, 2009-11, Vol.95 (21), p.211103-211103-3

2009

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High efficiency light emitting diode with anisotropically etchedGaN-sapphire interface

Applied physics letters, 2009-07, Vol.95 (4), p.041109-041109-3

2009

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Influence of Hydrogen on the Germanium Incorporation in a-Si1-xGex:H for Thin-film Solar Cell Application

MRS proceedings, 2010-01, Vol.1245 (1)

2010

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Study of Crystallinity in μc-Si:H Films Deposited by Cat-CVD for Thin Film Solar Cell Applications

MRS proceedings, 2010-01, Vol.1245 (1), Article 1245-A21-05

2010

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High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

Applied physics letters, 2004-05, Vol.84 (19), p.3822-3824

2004

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A novel method for growing polycrystalline Ge layer by using UHVCVD

Surface & coatings technology, 2006-02, Vol.200 (10), p.3261-3264

2006

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Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

Applied physics letters, 2002-12, Vol.81 (25), p.4763-4765

2002

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A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain

IEEE electron device letters, 2003-08, Vol.24 (8), p.509-511

2003

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Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel and Self-Aligned Tungsten-Clad Source/Drain

Electrochemical and solid-state letters, 2004, Vol.7 (2), p.G31

2004

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Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors

Applied physics letters, 2002-06, Vol.80 (25), p.4780-4782

2002

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Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics, 2003-01, Vol.42 (Part 1, No. 1), p.28-32

2003

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Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors

Vacuum, 2002, Vol.67 (3-4), p.541-545

2002

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An Ultra-Thin Polycrystalline-Silicon Thin-Film Transistor with SiGe Raised Source/Drain

32nd European Solid-State Device Research Conference, 2002, p.535-538

2002

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Dimensional Effects on the Drain Current of N- and P-Channel Polycrystalline Silicon Thin Film Transistors

Japanese Journal of Applied Physics, 2000-07, Vol.39 (7R), p.3879

2000

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Anomalous substrate current in polycrystalline silicon thin-film transistors

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.469-472

2003

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Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

Photocurrent Amplification at Carbon Nanotube-Metal Contacts

New Organic Phototransistor With Bias-Modulated Photosensitivity and Bias-Enhanced Memory Effect

Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors

Wide bandgap n-type and p-type semiconductor porous junction devices as photovoltaic cells

A W-spacer GOLD TFT with high performance and high reliability

Dimensional effects on the reliability of polycrystalline silicon thin-film transistors

Defect selective passivation in GaN epitaxial growth and its applicationto light emitting diodes

High efficiency light emitting diode with anisotropically etchedGaN-sapphire interface

Influence of Hydrogen on the Germanium Incorporation in a-Si1-xGex:H for Thin-film Solar Cell Application

Study of Crystallinity in μc-Si:H Films Deposited by Cat-CVD for Thin Film Solar Cell Applications

High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

A novel method for growing polycrystalline Ge layer by using UHVCVD

Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain

Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel and Self-Aligned Tungsten-Clad Source/Drain

Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors

Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors

Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors

An Ultra-Thin Polycrystalline-Silicon Thin-Film Transistor with SiGe Raised Source/Drain

Dimensional Effects on the Drain Current of N- and P-Channel Polycrystalline Silicon Thin Film Transistors

Anomalous substrate current in polycrystalline silicon thin-film transistors

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