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High-speed uni-traveling-carrier photodiodes on silicon nitride

APL photonics, 2023-01, Vol.8 (1), p.016104-016104-6

2023

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Ultrawide-Bandwidth Single-Channel 0.4-THz Wireless Link Combining Broadband Quasi-Optic Photomixer and Coherent Detection

IEEE transactions on terahertz science and technology, 2014-05, Vol.4 (3), p.328-337

2014

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THz Communications using Photonics and Electronic Devices: the Race to Data-Rate

Journal of infrared, millimeter and terahertz waves, 2015-02, Vol.36 (2), p.198-220

2015

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InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

IEEE electron device letters, 2014-10, Vol.35 (10), p.1010-1012

2014

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High‑Q Silicon Nitride Drum Resonators Strongly Coupled to Gates

Nano letters, 2021-07, Vol.21 (13), p.5738-5744

2021

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V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I }=\text \,\,\mu A. \mu m ^} at V }= \text V

IEEE journal of the Electron Devices Society, 2017-01, Vol.5 (1), p.53-58

2017

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32 Gbit/s QPSK transmission at 385 GHz using coherent fibre-optic technologies and THz double heterodyne detection

Electronics letters, 2015-06, Vol.51 (12), p.915-917

2015

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GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

Micro and nanostructures (2022), 2022-04, Vol.164, p.107116, Article 107116

2022

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Coherent THz communication at 200 GHz using a frequency comb, UTC-PD and electronic detection

Electronics letters, 2014-02, Vol.50 (5), p.386-388

2014

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A 300-GHz Wireless Link Employing a Photonic Transmitter and an Active Electronic Receiver With a Transmission Bandwidth of 54 GHz

IEEE transactions on terahertz science and technology, 2020-05, Vol.10 (3), p.271-281

2020

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Generation of mW Level in the 300-GHz Band Using Resonant-Cavity-Enhanced Unitraveling Carrier Photodiodes

IEEE transactions on terahertz science and technology, 2017-11, Vol.7 (6), p.800-807

2017

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InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance

Japanese Journal of Applied Physics, 1999-02, Vol.38 (2S), p.1164

1999

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Multi‐carrier transmission of vectorial modulation schemes using electronic transceivers at 588 GHz

Electronics letters, 2014-11, Vol.50 (23), p.1715-1717

2014

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Photonics-Based Projects at IEMN

THz Communications, 2022, p.477-479

2022

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0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz

IEEE electron device letters, 2014-03, Vol.35 (3), p.321

2014

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0.2- \mu InP/GaAsSb DHBT Power Performance With 10 /\mu^ and 25% PAE at 94 GHz

IEEE electron device letters, 2014-03, Vol.35 (3), p.321-323

2014

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0.2-μm InP/GaAsSb DHBT Power Performance With 10 mW/μm2 and 25% PAE at 94 GHz

IEEE electron device letters, 2014, Vol.35 (3), p.321-323

2014

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High Performance Heterostructure Low Barrier Diodes for Sub-THz Detection

IEEE transactions on terahertz science and technology, 2017-11, Vol.7 (6), p.780-788

2017

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High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz

Electronics letters, 2008-10, Vol.44 (22), p.1320-1322

2008

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V-shaped InAs/Al0.5Ga0.5Sb vertical tunnel FET on GaAs (001) substrate with ION=433 µA.µm-1 at VDS= 0.5V

IEEE journal of the Electron Devices Society, 2017, Vol.5 (1), p.53-58

2017

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Trends in Submicrometer InP-Based HBT Architecture Targeting Thermal Management

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2566-2572

2011

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Radiation Pattern Measurements of an Integrated Transverse Electromagnetic Horn Antenna Using a Terahertz Photomixing Setup

IEEE microwave and wireless components letters, 2011-01, Vol.21 (1), p.49-51

2011

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E-beam Fabricated GaN Schottky diode: High-frequency and non-linear properties

2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013, p.1-4

2013

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Narrow Linewidth Tunable Terahertz Radiation By Photomixing Without Servo-Locking

IEEE transactions on terahertz science and technology, 2014-03, Vol.4 (2), p.260-266

2014

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Optically power supplied Gbit/s wireless hotspot using 1.55 µm THz photomixer and heterodyne detection at 200 GHz

Electronics letters, 2010, Vol.46, p.1349-1350

2010

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High-speed uni-traveling-carrier photodiodes on silicon nitride

Ultrawide-Bandwidth Single-Channel 0.4-THz Wireless Link Combining Broadband Quasi-Optic Photomixer and Coherent Detection

THz Communications using Photonics and Electronic Devices: the Race to Data-Rate

InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

High‑Q Silicon Nitride Drum Resonators Strongly Coupled to Gates

V-Shaped InAs/Al0.5Ga0.5Sb Vertical Tunnel FET on GaAs (001) Substrate With I }=\text \,\,\mu A. \mu m ^} at V }= \text V

32 Gbit/s QPSK transmission at 385 GHz using coherent fibre-optic technologies and THz double heterodyne detection

GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

Coherent THz communication at 200 GHz using a frequency comb, UTC-PD and electronic detection

A 300-GHz Wireless Link Employing a Photonic Transmitter and an Active Electronic Receiver With a Transmission Bandwidth of 54 GHz

Generation of mW Level in the 300-GHz Band Using Resonant-Cavity-Enhanced Unitraveling Carrier Photodiodes

InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance

Multi‐carrier transmission of vectorial modulation schemes using electronic transceivers at 588 GHz

Photonics-Based Projects at IEMN

0.2-[Formula Omitted] InP/GaAsSb DHBT Power Performance With 10 [Formula Omitted] and 25% PAE at 94 GHz

0.2- \mu InP/GaAsSb DHBT Power Performance With 10 /\mu^ and 25% PAE at 94 GHz

0.2-μm InP/GaAsSb DHBT Power Performance With 10 mW/μm2 and 25% PAE at 94 GHz

High Performance Heterostructure Low Barrier Diodes for Sub-THz Detection

High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz

V-shaped InAs/Al0.5Ga0.5Sb vertical tunnel FET on GaAs (001) substrate with ION=433 µA.µm-1 at VDS= 0.5V

Trends in Submicrometer InP-Based HBT Architecture Targeting Thermal Management

Radiation Pattern Measurements of an Integrated Transverse Electromagnetic Horn Antenna Using a Terahertz Photomixing Setup

E-beam Fabricated GaN Schottky diode: High-frequency and non-linear properties

Narrow Linewidth Tunable Terahertz Radiation By Photomixing Without Servo-Locking

Optically power supplied Gbit/s wireless hotspot using 1.55 µm THz photomixer and heterodyne detection at 200 GHz

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