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Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

Physica status solidi. A, Applications and materials science, 2007-01, Vol.204 (1), p.227-230

2007

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Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1900-1903

2019

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Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density

Semiconductors (Woodbury, N.Y.), 2006-07, Vol.40 (7), p.839-845

2006

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Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (14), p.1843-1845

2018

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Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping

Physica status solidi. C, 2006-06, Vol.3 (6), p.2160-2164

2006

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High power blue AlGaInN LED chips with two-level metallization

Physica status solidi. C, 2015-04, Vol.12 (4-5), p.381-384

2015

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Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12206

2020

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Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

Journal of physics. Conference series, 2019-11, Vol.1400 (7), p.77009

2019

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Study of silicon nitride deposition in III-N MOVPE reactors

Journal of crystal growth, 2020-12, Vol.551, p.125906, Article 125906

2020

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Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

Semiconductor science and technology, 2018-01, Vol.33 (2)

2018

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Proton irradiation effects on GaN-based epitaxial structures

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12073

2020

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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

Journal of crystal growth, 2018-12, Vol.504, p.1-6

2018

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InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications

IOP conference series. Materials Science and Engineering, 2021-01, Vol.1019 (1), p.12071

2021

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Modeling of the electrical properties of polycrystalline ceramic semiconductors with submicron grains

Microelectronic engineering, 2005-08, Vol.81 (2), p.494-502

2005

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Field effect in granular metal films

Nanotechnology, 2003-03, Vol.14 (3), p.366-370

2003

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High-power flip-chip blue light-emitting diodes based on AlGaInN

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (7), p.851-855

2005

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Efficiency improvement of AlGaInN LEDs advanced by ray-tracing analysis

IEEE journal of quantum electronics, 2004-12, Vol.40 (12), p.1675-1686

2004

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Monte-Carlo simulation of electron transport and field effect in granular metal nanostructures

Microelectronic engineering, 2003-09, Vol.69 (2), p.646-652

2003

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Temperature dependence of the conductivity of Cu: SiO2 composite films. Experiment and numerical simulation

Journal of experimental and theoretical physics, 2000-01, Vol.91 (3), p.553-561

2000

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Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling

Physica status solidi. A, Applications and materials science, 2012-03, Vol.209 (3), p.456-460

2012

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Fabrication of high-power flip-chip blue and white LEDs operating under high current density

Physica status solidi. C, 2004-09, Vol.1 (10), p.2401-2404

2004

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Barrier height modification and mechanism of carrier transport in Ni/ in situ grown Si 3 N 4 /n-GaN Schottky contacts

Semiconductor science and technology, 2018-02, Vol.33 (2), p.25009

2018

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Simulation of the electrical properties of polycrystalline ceramic semiconductors with submicrometer grain sizes

Semiconductors (Woodbury, N.Y.), 2005-01, Vol.39 (5), p.577-584

2005

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Technique for forming ITO films with a controlled refractive index

Semiconductors (Woodbury, N.Y.), 2016-07, Vol.50 (7), p.984-988

2016

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Calculation of the optimal architecture of a double-layer ITO film intended for use in reflective contacts in blue and near-UV LEDs

Semiconductors (Woodbury, N.Y.), 2015-07, Vol.49 (7), p.972-975

2015

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Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density

Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs

Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping

High power blue AlGaInN LED chips with two-level metallization

Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

Study of silicon nitride deposition in III-N MOVPE reactors

Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

Proton irradiation effects on GaN-based epitaxial structures

Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications

Modeling of the electrical properties of polycrystalline ceramic semiconductors with submicron grains

Field effect in granular metal films

High-power flip-chip blue light-emitting diodes based on AlGaInN

Efficiency improvement of AlGaInN LEDs advanced by ray-tracing analysis

Monte-Carlo simulation of electron transport and field effect in granular metal nanostructures

Temperature dependence of the conductivity of Cu: SiO2 composite films. Experiment and numerical simulation

Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling

Fabrication of high-power flip-chip blue and white LEDs operating under high current density

Barrier height modification and mechanism of carrier transport in Ni/ in situ grown Si 3 N 4 /n-GaN Schottky contacts

Simulation of the electrical properties of polycrystalline ceramic semiconductors with submicrometer grain sizes

Technique for forming ITO films with a controlled refractive index

Calculation of the optimal architecture of a double-layer ITO film intended for use in reflective contacts in blue and near-UV LEDs

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