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Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures

Thin solid films, 2010-02, Vol.518 (9), p.2555-2561

2010

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Sb mediated formation of Ge/Si quantum dots: Growth and properties

Thin solid films, 2012-02, Vol.520 (8), p.3322-3325

2012

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Growth phenomena of Si and Si/Ge nanowires on Si (1 1 1) by molecular beam epitaxy

Journal of crystal growth, 2006-04, Vol.290 (1), p.6-10

2006

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Aperiodic SiSn/Si multilayers for thermoelectric applications

Journal of crystal growth, 2014-04, Vol.392, p.49-51

2014

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Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well

Journal of crystal growth, 2015-09, Vol.425, p.172-176

2015

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Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

Journal of crystal growth, 2014-06, Vol.396, p.66-70

2014

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Sb-modified growth of stacked Ge/Si(100) quantum dots

Thin solid films, 2011-03, Vol.519 (11), p.3669-3673

2011

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Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defects

Thin solid films, 2008-11, Vol.517 (1), p.278-280

2008

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Structure of UMo4O14 oxide

Progress in nuclear energy (New series), 2012-05, Vol.57, p.150-154

2012

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Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy

Microelectronics, 2009-03, Vol.40 (3), p.452-455

2009

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Optical properties of InAs quantum dots in a Si matrix

Physica. E, Low-dimensional systems & nanostructures, 2000-05, Vol.7 (3-4), p.317-321

2000

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Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge islands

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1418

2012

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Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals

Solid state sciences, 2008-06, Vol.10 (6), p.702-708

2008

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Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time

Technical physics, 2014-03, Vol.59 (3), p.402-406

2014

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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Nanoscale research letters, 2006-12, Vol.1 (2), p.137-153, Article 137

2006

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Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO 2 (rutile) and (001) BaTiO 3 single crystals

Solid state sciences, 2008, Vol.10 (6), p.702-708

2008

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Preparation and magnetic properties of (Bi,Pb)-1212

Physica. C, Superconductivity, 1996-09, Vol.268 (1), p.100-106

1996

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Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1460-1470

2012

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Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm

Physica. E, Low-dimensional systems & nanostructures, 2009-05, Vol.41 (6), p.935-938

2009

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Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice

Journal of luminescence, 2006-12, Vol.121 (2), p.417-420

2006

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Three Dimensional Structure of UMo 8 O 26 : Ordering of U-Vacancies

MRS proceedings, 2002, Vol.718, Article D4.12

2002

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Transient spectroscopy of InAs quantum dot molecules

Applied physics letters, 2004-07, Vol.85 (2), p.284-286

2004

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InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics

Semiconductors (Woodbury, N.Y.), 2010-08, Vol.44 (8), p.1050-1058

2010

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Si Wafer Bonding: Structural Features of the Interface

Solid state phenomena, 2009-10, Vol.156-158, p.85-90

2009

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Room Temperature Superlinear Power Dependence of Photoluminescence from Defect-Free Si/Ge Quantum Dot Multilayer Structures

Physica status solidi. B. Basic research, 2002-07, Vol.232 (1), p.R1-R3

2002

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Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures

Sb mediated formation of Ge/Si quantum dots: Growth and properties

Growth phenomena of Si and Si/Ge nanowires on Si (1 1 1) by molecular beam epitaxy

Aperiodic SiSn/Si multilayers for thermoelectric applications

Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well

Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

Sb-modified growth of stacked Ge/Si(100) quantum dots

Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defects

Structure of UMo4O14 oxide

Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy

Optical properties of InAs quantum dots in a Si matrix

Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge islands

Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals

Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO 2 (rutile) and (001) BaTiO 3 single crystals

Preparation and magnetic properties of (Bi,Pb)-1212

Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm

Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice

Three Dimensional Structure of UMo 8 O 26 : Ordering of U-Vacancies

Transient spectroscopy of InAs quantum dot molecules

InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics

Si Wafer Bonding: Structural Features of the Interface

Room Temperature Superlinear Power Dependence of Photoluminescence from Defect-Free Si/Ge Quantum Dot Multilayer Structures

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