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Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs-InP DBR Grown by MOCVD

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.990-998

2005

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High efficiency long wavelength VCSEL on InP grown by MOCVD

Electronics letters, 2003-03, Vol.39 (5), p.437

2003

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Multiwavelength DFB laser array transmitters for ONTC reconfigurable optical network testbed

Journal of lightwave technology, 1996-06, Vol.14 (6), p.967-976

1996

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Continuous wavelength tuning of two-electrode vertical cavity surface emitting lasers

Electronics letters, 1991-05, Vol.27 (11), p.1002-1003

1991

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Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics

IEEE photonics technology letters, 1990-04, Vol.2 (4), p.231-233

1990

Volltextzugriff (PDF)

Tunable Optical Delay and Nonlinear Phase Shift using 1.55 μm VCSEL

2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest, 2006, p.121-122

2006

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Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions

Applied physics letters, 1988-06, Vol.52 (23), p.1945-1947

1988

Volltextzugriff (PDF)

Wavelength accuracy and output power of multiwavelength DFB laser arrays with integrated star couplers and optical amplifiers

IEEE photonics technology letters, 1996-07, Vol.8 (7), p.864-866

1996

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Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

Journal of crystal growth, 1991, Vol.107 (1), p.772-778

1991

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Unambiguous determination of quantum capture, carrier diffusion, and intrinsic effects in quantum-well laser dynamics using wavelength-selective optical modulation

IEEE photonics technology letters, 1995-07, Vol.7 (7), p.706-708

1995

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Low threshold 1.5μm tensile-strained single quantum well lasers

Electronics letters, 1991-08, Vol.27 (16), p.1414-1416

1991

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Measurement of differential gain and linewidth enhancement factor of 1.5-μm strained quantum-well active layers

IEEE journal of quantum electronics, 1994-02, Vol.30 (2), p.571-577

1994

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Amplitude-modulation sideband injection locking characteristics of semiconductor lasers and their application

Journal of lightwave technology, 1988-12, Vol.6 (12), p.1821-1830

1988

Volltextzugriff (PDF)

Measurement of differential gain and linewidth enhancement factor of 1.5-/spl mu/m strained quantum-well active layers

IEEE journal of quantum electronics, 1994-02, Vol.30 (2), p.571-577

1994

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Submilliampere-threshold 1.5- mu m strained-layer multiple quantum well lasers

IEEE photonics technology letters, 1990-12, Vol.2 (12), p.852-853

1990

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Multiple-reflection-induced intensity noise studies in a lightwave system for multichannel AM-VSB television signal distribution

IEEE photonics technology letters, 1990-05, Vol.2 (5), p.360-362

1990

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1.5 μm compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arrays

Electronics letters, 1992-04, Vol.28 (9), p.824

1992

Volltextzugriff (PDF)

Differential gain and linewidth enhancement factor of 1.5- mu m multiple-quantum-well active layers with and without biaxially compressive strain

IEEE photonics technology letters, 1991-04, Vol.3 (4), p.314-317

1991

Volltextzugriff (PDF)

High-performance 1.3 μm AlGaInAs/InP strained quantum well lasers grown by organometallic chemical vapor deposition

Journal of crystal growth, 1994-12, Vol.145 (1), p.858-865

1994

Volltextzugriff (PDF)

Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

IEEE photonics technology letters, 1994-03, Vol.6 (3), p.317-319

1994

Volltextzugriff (PDF)

Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

IEEE photonics technology letters, 1994-03, Vol.6 (3), p.317-319

1994

Volltextzugriff (PDF)

Ti doping of InP and GaInAs using TiCl 4

Journal of crystal growth, 1994, Vol.145 (1), p.427-434

1994

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Ti doping of InP and GaInAs using TiCl4

Journal of crystal growth, 1994-12, Vol.145 (1-4), p.427-434

1994

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Low threshold 1.3 μm strained-layer Al x Ga y In 1− x − y As quantum well lasers

Electronics letters, 1992-12, Vol.28 (25), p.2323-2325

1992

Volltextzugriff (PDF)

Orientation-dependent doping in organometallic chemical vapor deposition on nonplanar InP substrates : application to double-heterostructure lasers and lateral p-n junction arrays

Applied physics letters, 1990-04, Vol.56 (17), p.1691-1693

1990

Volltextzugriff (PDF)

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Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs-InP DBR Grown by MOCVD

High efficiency long wavelength VCSEL on InP grown by MOCVD

Multiwavelength DFB laser array transmitters for ONTC reconfigurable optical network testbed

Continuous wavelength tuning of two-electrode vertical cavity surface emitting lasers

Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics

Tunable Optical Delay and Nonlinear Phase Shift using 1.55 μm VCSEL

Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions

Wavelength accuracy and output power of multiwavelength DFB laser arrays with integrated star couplers and optical amplifiers

Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

Unambiguous determination of quantum capture, carrier diffusion, and intrinsic effects in quantum-well laser dynamics using wavelength-selective optical modulation

Low threshold 1.5μm tensile-strained single quantum well lasers

Measurement of differential gain and linewidth enhancement factor of 1.5-μm strained quantum-well active layers

Amplitude-modulation sideband injection locking characteristics of semiconductor lasers and their application

Measurement of differential gain and linewidth enhancement factor of 1.5-/spl mu/m strained quantum-well active layers

Submilliampere-threshold 1.5- mu m strained-layer multiple quantum well lasers

Multiple-reflection-induced intensity noise studies in a lightwave system for multichannel AM-VSB television signal distribution

1.5 μm compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arrays

Differential gain and linewidth enhancement factor of 1.5- mu m multiple-quantum-well active layers with and without biaxially compressive strain

High-performance 1.3 μm AlGaInAs/InP strained quantum well lasers grown by organometallic chemical vapor deposition

Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

Ti doping of InP and GaInAs using TiCl 4

Ti doping of InP and GaInAs using TiCl4

Low threshold 1.3 μm strained-layer Al x Ga y In 1− x − y As quantum well lasers

Orientation-dependent doping in organometallic chemical vapor deposition on nonplanar InP substrates : application to double-heterostructure lasers and lateral p-n junction arrays

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