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Simple description of laterally resonant, distributed-feedback-like modes of arrays of antiguides

Applied physics letters, 1992-03, Vol.60 (9), p.1049-1051

1992

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Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers

Applied physics letters, 1986-07, Vol.49 (1), p.16-18

1986

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Room temperature photopumped ZnSe lasers

IEEE photonics technology letters, 1990-02, Vol.2 (2), p.94-96

1990

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High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array

Applied physics letters, 1988-08, Vol.53 (6), p.457-459

1988

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Temperature-dependent factors contributing to T0 in graded-index separate-confinement-heterostructure single quantum well lasers

Applied physics letters, 1987-05, Vol.50 (20), p.1403-1405

1987

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Nonplanar index-guided quantum well heterostructure periodic laser array

Applied physics letters, 1988-08, Vol.53 (5), p.350-352

1988

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High-power nonplanar quantum well heterostructure periodic laser arrays

Applied physics letters, 1988-09, Vol.53 (13), p.1159-1161

1988

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Photopumped antiguide blue lasers fabricated from molecular beam epitaxial ZnSe on GaAs

IEEE photonics technology letters, 1991-08, Vol.3 (8), p.685-687

1991

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Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes

Applied physics letters, 1987-02, Vol.50 (6), p.301-303

1987

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Complementary self-aligned laser by metalorganic chemical vapour deposition

Electronics letters, 1985-01, Vol.21 (20), p.903-905

1985

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Phase-locked arrays of antiguides: analytical theory II

IEEE journal of quantum electronics, 1995-02, Vol.31 (2), p.244-253, Article 244

1995

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Differential gain in bulk and quantum well diode lasers

IEEE photonics technology letters, 1991-12, Vol.3 (12), p.1057-1060

1991

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Complementary self-aligned laser arrays by metalorganic chemical vapor deposition

Journal of applied physics, 1986-10, Vol.60 (7), p.2633-2635

1986

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Phase-locked shallow mesa graded barrier quantum well laser arrays

Applied physics letters, 1986-05, Vol.48 (20), p.1337-1339

1986

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A self-consistent model of a nonplanar quantum-well periodic laser array

IEEE journal of quantum electronics, 1991-07, Vol.27 (7), p.1886-1899

1991

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Phase locked narrow zinc diffused stripe laser arrays

Applied physics letters, 1986-05, Vol.48 (21), p.1424-1426

1986

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The effect of various buffer-layer structures on the material quality and dislocation density of high composition AlxGa1-xAs laser material grown by metalorganic chemical vapor deposition

Journal of applied physics, 1988-05, Vol.63 (10), p.5092-5097

1988

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Optimization and characterization of index-guided visible AlGaAs/GaAs graded barrier quantum well laser diodes

IEEE journal of quantum electronics, 1987-06, Vol.23 (6), p.696-703

1987

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Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasers

Electronics letters, 1986-04, Vol.22 (9), p.475-477

1986

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Near- and far-field observations of transient behavior in pulsed graded barrier quantum well lasers

Journal of applied physics, 1986-10, Vol.60 (7), p.2613-2615

1986

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Optical characteristics of high-power nonplanar periodic laser arrays

IEEE journal of quantum electronics, 1989-06, Vol.25 (6), p.1539-1546

1989

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VA-3 Index-guided complementary self-aligned laser arrays by MOCVD

IEEE transactions on electron devices, 1986-11, Vol.33 (11), p.1857-1857

1986

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Operational and design considerations for broad area graded barrier quantum well heterostructure lasers grown by metalorganic chemical vapor deposition for high power applications

Fiber and integrated optics, 1988-01, Vol.7 (4), p.343-352

1988

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The effect of various buffer-layer structures on the material quality and dislocation density of high composition Al(x)Ga(1-x)As laser material grown by metalorganic chemical vapor deposition

Journal of applied physics, 1988-05, Vol.63, p.5092-5097

1988

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Temperature-dependent factors contributing to T 0 in graded-index separate-confinement-heterostructure single quantum well lasers

Applied physics letters, 1987-05, Vol.50 (20), p.1403-1405

1987

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Simple description of laterally resonant, distributed-feedback-like modes of arrays of antiguides

Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers

Room temperature photopumped ZnSe lasers

High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array

Temperature-dependent factors contributing to T0 in graded-index separate-confinement-heterostructure single quantum well lasers

Nonplanar index-guided quantum well heterostructure periodic laser array

High-power nonplanar quantum well heterostructure periodic laser arrays

Photopumped antiguide blue lasers fabricated from molecular beam epitaxial ZnSe on GaAs

Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes

Complementary self-aligned laser by metalorganic chemical vapour deposition

Phase-locked arrays of antiguides: analytical theory II

Differential gain in bulk and quantum well diode lasers

Complementary self-aligned laser arrays by metalorganic chemical vapor deposition

Phase-locked shallow mesa graded barrier quantum well laser arrays

A self-consistent model of a nonplanar quantum-well periodic laser array

Phase locked narrow zinc diffused stripe laser arrays

The effect of various buffer-layer structures on the material quality and dislocation density of high composition AlxGa1-xAs laser material grown by metalorganic chemical vapor deposition

Optimization and characterization of index-guided visible AlGaAs/GaAs graded barrier quantum well laser diodes

Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasers

Near- and far-field observations of transient behavior in pulsed graded barrier quantum well lasers

Optical characteristics of high-power nonplanar periodic laser arrays

VA-3 Index-guided complementary self-aligned laser arrays by MOCVD

Operational and design considerations for broad area graded barrier quantum well heterostructure lasers grown by metalorganic chemical vapor deposition for high power applications

The effect of various buffer-layer structures on the material quality and dislocation density of high composition Al(x)Ga(1-x)As laser material grown by metalorganic chemical vapor deposition

Temperature-dependent factors contributing to T 0 in graded-index separate-confinement-heterostructure single quantum well lasers

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