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InP-Based Electro-Optic and Electro-Absorption Modulators for the 1.5-μm Spectral Range

Bulletin of the Lebedev Physics Institute, 2024-06, Vol.51 (Suppl 2), p.S101-S116

2024

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Recombination Kinetics of Excitons and Trions in Free-Standing CdS Quantum Dots Synthesized by the Langmuir–Blodgett Method

Journal of experimental and theoretical physics, 2022-08, Vol.135 (2), p.215-225

2022

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On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique

Semiconductors (Woodbury, N.Y.), 2019-11, Vol.53 (11), p.1540-1544

2019

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GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow

Semiconductors (Woodbury, N.Y.), 2022-06, Vol.56 (6), p.340-345

2022

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Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux

Semiconductors (Woodbury, N.Y.), 2021-11, Vol.55 (11), p.823-827

2021

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Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Semiconductors (Woodbury, N.Y.), 2022-06, Vol.56 (6), p.352-359

2022

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Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Journal of thermal analysis and calorimetry, 2018-08, Vol.133 (2), p.1099-1107

2018

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Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors

Journal of physics. D, Applied physics, 2016-02, Vol.49 (9), p.95108

2016

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High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

Technical physics, 2021-09, Vol.66 (9), p.1072-1077

2021

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Atomic and energy structure of InAs/AlAs quantum dots

Physical review. B, Condensed matter and materials physics, 2008-08, Vol.78 (8), Article 085323

2008

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Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow

Applied physics letters, 2022-01, Vol.120 (5)

2022

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Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

Journal of physics. Conference series, 2017, Vol.816 (1)

2017

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Characterization of MBE-grown AlGaN layers heavily doped using silane

Physica status solidi. C, 2013-03, Vol.10 (3), p.315-318

2013

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Millimeter-Wave Donor-Acceptor-Doped DpHEMT

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.53-56

2021

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Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

Journal of physics. Conference series, 2022-03, Vol.2227 (1), p.12004

2022

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AlSb/InAs Heterostructures for Microwave Transistors

Technical physics letters, 2021-02, Vol.47 (2), p.139-142

2021

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Interplay of exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs

Physical review. B, Condensed matter and materials physics, 2006-01, Vol.73 (3), Article 035205

2006

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Defect-related luminescence in InAlAs on InP grown by molecular beam epitaxy

Semiconductor science and technology, 2017-09, Vol.32 (9), p.95009

2017

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Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: evidence for lateral inter-dot transport

Semiconductor science and technology, 2006-04, Vol.21 (4), p.527-531

2006

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Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

Journal of physics. Conference series, 2021-03, Vol.1851 (1), p.12005

2021

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Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5

Journal of physics. Conference series, 2018, Vol.993 (1)

2018

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Features of Optical Gain in Heavily Doped AlxGa1 –xN:Si-Structures

Technical physics letters, 2021-09, Vol.47 (9), p.692-695

2021

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AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy

Technical physics letters, 2020-02, Vol.46 (2), p.154-157

2020

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Moving photoluminescence band in AlGaN GaN heterostructures

Semiconductor science and technology, 2015-08, Vol.30 (8), p.85010

2015

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Influence of substrate temperature on the morphology of silicon oxide nanowires synthesized using a tin catalyst

Physica status solidi. A, Applications and materials science, 2016-07, Vol.213 (7), p.1790-1795

2016

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InP-Based Electro-Optic and Electro-Absorption Modulators for the 1.5-μm Spectral Range

Recombination Kinetics of Excitons and Trions in Free-Standing CdS Quantum Dots Synthesized by the Langmuir–Blodgett Method

On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique

GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow

Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux

Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors

High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

Atomic and energy structure of InAs/AlAs quantum dots

Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow

Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

Characterization of MBE-grown AlGaN layers heavily doped using silane

Millimeter-Wave Donor-Acceptor-Doped DpHEMT

Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

AlSb/InAs Heterostructures for Microwave Transistors

Interplay of exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs

Defect-related luminescence in InAlAs on InP grown by molecular beam epitaxy

Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: evidence for lateral inter-dot transport

Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5

Features of Optical Gain in Heavily Doped AlxGa1 –xN:Si-Structures

AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy

Moving photoluminescence band in AlGaN GaN heterostructures

Influence of substrate temperature on the morphology of silicon oxide nanowires synthesized using a tin catalyst

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