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Design and Simulation of 5-20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3230-3237

2013

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Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3025-3031

2013

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Mitochondrial ferritin alleviates apoptosis by enhancing mitochondrial bioenergetics and stimulating glucose metabolism in cerebral ischemia reperfusion

Redox biology, 2022-11, Vol.57, p.102475-102475, Article 102475

2022

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Cdh5-mediated Fpn1 deletion exerts neuroprotective effects during the acute phase and inhibitory effects during the recovery phase of ischemic stroke

Cell death & disease, 2023-02, Vol.14 (2), p.161-161, Article 161

2023

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Occupational attainment and stratification in China: The interactive effects of social networks and the hukou system

Review of development economics, 2020-08, Vol.24 (3), p.1167-1192

2020

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Metal--Oxide--Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO2 on GaN

Jpn J Appl Phys, 2013-08, Vol.52 (8), p.08JN24-08JN24-4

2013

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Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.907-910

2012

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Channel scaling of hybrid GaN MOS-HEMTs

Solid-state electronics, 2011-02, Vol.56 (1), p.111-115

2011

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Preference or endowment? Intergenerational transmission of women’s work behavior and the underlying mechanisms

Journal of population economics, 2019-10, Vol.32 (4), p.1401-1435

2019

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Avalanche Breakdown Design Parameters in GaN

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN05-08JN05-4

2013

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Design and Simulation of Novel Enhancement Mode 5--20 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN01-08JN01-4

2013

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A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN11-08JN11-3

2013

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Robustness of GaN vertical superjunction HEMT

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.217-220

2013

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Financial globalization, domestic financial freedom and risk sharing across countries

Journal of international financial markets, institutions & money, 2018-07, Vol.55, p.151-169

2018

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High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.45-48

2012

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Drift region optimization in high-voltage GaN MOS-gated HEMTs

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2436-2438

2011

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Health insurance, risk attitudes, and household financial behavior

Health economics, 2021-05, Vol.30 (5), p.1239-1246

2021

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Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates

Solid-state electronics, 2011-02, Vol.56 (1), p.73-78

2011

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Nanoparticles insert a three dimensional cavity structure of proteins for function inhibition: The Case of CeO2 and SARS-CoV-2

Nano today, 2024-04, Vol.55, p.102183, Article 102183

2024

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Channel scaling of hybrid GaN MOS-HEMTs

2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2010, p.221-224

2010

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Intergenerational income mobility and public education spending: Evidence from China

Children and youth services review, 2014-05, Vol.40, p.89-97

2014

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Design and Simulation of 5―20-kV GaN Enhancement-Mode Vertical Superjunction HEMT : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3230-3237

2013

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Comparison of 600V Si, SiC and GaN Power Devices

Materials science forum, 2014-02, Vol.778-780, p.971-974

2014

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650V SiC cascode: A breakthrough for wide-bandgap switches

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 673

2017

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Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3025-3031

2013

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Design and Simulation of 5-20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

Mitochondrial ferritin alleviates apoptosis by enhancing mitochondrial bioenergetics and stimulating glucose metabolism in cerebral ischemia reperfusion

Cdh5-mediated Fpn1 deletion exerts neuroprotective effects during the acute phase and inhibitory effects during the recovery phase of ischemic stroke

Occupational attainment and stratification in China: The interactive effects of social networks and the hukou system

Metal--Oxide--Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO2 on GaN

Impact of annealing on ALD Al2O3 gate dielectric for GaN MOS devices

Channel scaling of hybrid GaN MOS-HEMTs

Preference or endowment? Intergenerational transmission of women’s work behavior and the underlying mechanisms

Avalanche Breakdown Design Parameters in GaN

Design and Simulation of Novel Enhancement Mode 5--20 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications

A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

Robustness of GaN vertical superjunction HEMT

Financial globalization, domestic financial freedom and risk sharing across countries

High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications

Drift region optimization in high-voltage GaN MOS-gated HEMTs

Health insurance, risk attitudes, and household financial behavior

Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates

Nanoparticles insert a three dimensional cavity structure of proteins for function inhibition: The Case of CeO2 and SARS-CoV-2

Channel scaling of hybrid GaN MOS-HEMTs

Intergenerational income mobility and public education spending: Evidence from China

Design and Simulation of 5―20-kV GaN Enhancement-Mode Vertical Superjunction HEMT : GaN ELECTRONIC DEVICES

Comparison of 600V Si, SiC and GaN Power Devices

650V SiC cascode: A breakthrough for wide-bandgap switches

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs : GaN ELECTRONIC DEVICES

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