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Influences of substrates and substrate temperatures on characteristics of epitaxial La0.5Sr0.5CoO3 thin films

Thin solid films, 1998-06, Vol.323 (1-2), p.304-308

1998

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Surface analysis of PbTiO3 films prepared by the sol-gel method

Journal of applied physics, 1992-04, Vol.71 (7), p.3467-3470

1992

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Gettering effects in BF2-implanted Si(100) by ion-beam defect engineering

Journal of applied physics, 1995-05, Vol.77 (10), p.5014-5019

1995

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Radiation damage behavior of LiNbO3 crystal by MeV F ion implantation

Journal of applied physics, 1993-08, Vol.74 (3), p.1625-1628

1993

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Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Journal of applied physics, 1992-04, Vol.71 (8), p.3780-3784

1992

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Determination of the lateral spread of Xe ions in silicon nitride and hydrated silicon nitride films by oblique incidence Rutherford backscattering

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1996-01, Vol.14 (1), p.240-244

1996

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Lattice disorder in LiNbO3 crystals induced by MeV Cu+ implantation

Journal of applied physics, 1992-08, Vol.72 (3), p.899-903

1992

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Structure changes in PbTiO3 films induced by ion implantation with Ar+ and N

Physics letters. A, 1992-07, Vol.167 (4), p.411-414

1992

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Effects of ion beam defect engineering on carrier concentration profiles in 50 keV P+-implanted Si(100)

Applied physics letters, 1993-06, Vol.62 (24), p.3183-3185

1993

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Investigation of lateral straggling of Xe ions in potassium titanyl phosphate

Journal of applied physics, 1993-06, Vol.73 (11), p.7222-7224

1993

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Depth distribution of Hg ions at energies from 50 to 400 keV implanted in potassium titanyl phosphate

Journal of applied physics, 1990-10, Vol.68 (8), p.3975-3978

1990

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Ion-induced crystallization and amorphization at crystal/amorphous interfaces of silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-06, Vol.100 (4), p.493-501

1995

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Range profiles of Xe ions at energies from 50 to 400 keV in potassium titanyl phosphate

Physics letters. A, 1990-12, Vol.151 (5), p.241-245

1990

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Two-dimensional distributions of Xe ions implanted in Si3N4 films

Vacuum, 1993-10, Vol.44 (10), p.1045-1048

1993

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New model of ion-induced crystallization and amorphization of silicon

Applied physics letters, 1994-02, Vol.64 (8), p.1000-1002

1994

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Structural characteristics and the control of crystallographic orientation of CeO2 thin films prepared by laser ablation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-02, Vol.135 (1-4), p.535-539

1998

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Damage behaviours in LiNbO3 crystals induced by MeV Au+ irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-02, Vol.135 (1-4), p.275-279

1998

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Effects of MeV Si ion irradiation on the properties of shallow P + N junctions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-02, Vol.135 (1), p.280-284

1998

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Ion beam defect engineering in semiconductors and optoelectric materials

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-07, Vol.115 (1), p.421-429

1996

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Growth of ferroelectric (K0.5Na0.5)0.2(Sr0.75Ba0.25)0.9Nb2O6 thin films by fulsed laser deposition

Solid state communications, 1997-08, Vol.103 (5), p.285-289

1997

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Reduction of secondary defects in BF2 implanted Si(100) by ion beam defect engineering

Applied physics letters, 1994-01, Vol.64 (2), p.175-177

1994

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Damage distribution and waveguide formation in Cu implanted LiNbO3

Physics letters. A, 1993-04, Vol.175 (5), p.341-344

1993

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Damage profiles in silicon tilt angles bombarded by high energy Cu ions

Journal of applied physics, 1994-09, Vol.76 (6), p.3357-3361

1994

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Lateral spread effects in the implantation of Ar+, Xe+, and Hg+ in Si3N4 films

Journal of applied physics, 1992-11, Vol.72 (9), p.4003-4006

1992

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Investigation of lateral straggling of Hg ions in Si3N4 by normal and glancing angle Rutherford backscattering

Applied physics letters, 1991-04, Vol.58 (13), p.1401-1403

1991

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Influences of substrates and substrate temperatures on characteristics of epitaxial La0.5Sr0.5CoO3 thin films

Surface analysis of PbTiO3 films prepared by the sol-gel method

Gettering effects in BF2-implanted Si(100) by ion-beam defect engineering

Radiation damage behavior of LiNbO3 crystal by MeV F ion implantation

Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering

Determination of the lateral spread of Xe ions in silicon nitride and hydrated silicon nitride films by oblique incidence Rutherford backscattering

Lattice disorder in LiNbO3 crystals induced by MeV Cu+ implantation

Structure changes in PbTiO3 films induced by ion implantation with Ar+ and N

Effects of ion beam defect engineering on carrier concentration profiles in 50 keV P+-implanted Si(100)

Investigation of lateral straggling of Xe ions in potassium titanyl phosphate

Depth distribution of Hg ions at energies from 50 to 400 keV implanted in potassium titanyl phosphate

Ion-induced crystallization and amorphization at crystal/amorphous interfaces of silicon

Range profiles of Xe ions at energies from 50 to 400 keV in potassium titanyl phosphate

Two-dimensional distributions of Xe ions implanted in Si3N4 films

New model of ion-induced crystallization and amorphization of silicon

Structural characteristics and the control of crystallographic orientation of CeO2 thin films prepared by laser ablation

Damage behaviours in LiNbO3 crystals induced by MeV Au+ irradiation

Effects of MeV Si ion irradiation on the properties of shallow P + N junctions

Ion beam defect engineering in semiconductors and optoelectric materials

Growth of ferroelectric (K0.5Na0.5)0.2(Sr0.75Ba0.25)0.9Nb2O6 thin films by fulsed laser deposition

Reduction of secondary defects in BF2 implanted Si(100) by ion beam defect engineering

Damage distribution and waveguide formation in Cu implanted LiNbO3

Damage profiles in silicon tilt angles bombarded by high energy Cu ions

Lateral spread effects in the implantation of Ar+, Xe+, and Hg+ in Si3N4 films

Investigation of lateral straggling of Hg ions in Si3N4 by normal and glancing angle Rutherford backscattering

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