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Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures

Semiconductors (Woodbury, N.Y.), 2007-09, Vol.41 (9), p.1117-1125

2007

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The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler–Nordheim tunneling

Solid-state electronics, 2004-05, Vol.48 (5), p.831-836

2004

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Problems of relaxation spectroscopy of localised electron states

Semiconductor science and technology, 1990-07, Vol.5 (7), p.675-685

1990

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Ion transport phenomena in oxide layer on the silicon surface and electron–ion exchange effects at the SiO2/Si interface

Journal of applied physics, 2001-01, Vol.89 (1), p.130-145

2001

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Increase in the Rate and Discretization of the Kinetics of Isothermal Surface Generation of Minority Charge Carriers in Metal–Insulator–Semiconductor Structures with a Planar-Inhomogeneous Insulator

Semiconductors (Woodbury, N.Y.), 2005, Vol.39 (6), p.666

Zhdan, A. G.

2005

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Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures

Instruments and experimental techniques (New York), 2005-07, Vol.48 (4), p.498-502

2005

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Improving the Accuracy in Determining the Insulator Capacitance in Metal–Insulator–Semiconductor Structures

Instruments and experimental techniques (New York), 2004-11, Vol.47 (6), p.791-798

2004

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Energy dependence of the carrier capture coefficient for neutral shallow impurities in semiconductors

Semiconductor science and technology, 1993-04, Vol.8 (4), p.544-548

1993

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Determination of the absolute value of the semiconductor surface potential by the quasi-static capacitance-voltage characteristics of an MIS structure

Semiconductors (Woodbury, N.Y.), 2003-06, Vol.37 (6), p.661-666

2003

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Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide

Semiconductors (Woodbury, N.Y.), 2009-05, Vol.43 (5), p.677-679

2009

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Direct tunneling of electrons in Al-n+-Si-SiO2-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

Semiconductors (Woodbury, N.Y.), 2010-08, Vol.44 (8), p.1016-1019

2010

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Direct tunneling of electrons in Al-n{sup +}-Si-SiO{sub 2}-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

Semiconductors (Woodbury, N.Y.), 2010-08, Vol.44 (8)

2010

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A new approach to the creation of nanoelectronic systems using a dimensionally-quantized potential relief of charges built into insulating layers on a semiconductor surface

Technical physics letters, 2000-01, Vol.26 (1), p.19-20

2000

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Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary

Semiconductors (Woodbury, N.Y.), 1999-08, Vol.33 (8), p.852-857

1999

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On the origin of the thermal-field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (6), p.650-654

2000

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Free ion transport in the insulator layer and electron-ion exchange at an insulator-semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures

Semiconductors (Woodbury, N.Y.), 1999-08, Vol.33 (8), p.877-882

1999

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Reconstruction of the potential profile in an insulating layer using current-voltage characteristics of tunneling MIS diodes

Semiconductors (Woodbury, N.Y.), 2008, Vol.42 (1), p.92-98

2008

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A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures

Semiconductors (Woodbury, N.Y.), 2006-02, Vol.40 (2), p.190-196

2006

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Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures

Semiconductors (Woodbury, N.Y.), 1999-03, Vol.33 (3), p.308

Goldman, E. I.

1999

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Kinetics of ion depolarization of Si-MOS structures in the linear voltage sweep regime

Semiconductors (Woodbury, N.Y.), 1997-12, Vol.31 (12), p.1268-1272

1997

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Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (3), p.277-283

2000

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Increase in the electron mobility in the inversion channel of a Si-MOS transistor in the case of ion polarization of the gate oxide

Semiconductors (Woodbury, N.Y.), 2007-03, Vol.41 (3), p.357-360

2007

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Determining electrophysical characteristics of metal-oxide-semiconductor structures from the data of voltage-capacitance analysis of the depletion region of a semiconductor surface

Instruments and experimental techniques (New York), 2008-07, Vol.51 (4), p.588-592

2008

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C-V and I-V characteristics of ultrathin-oxide MOS structures: Identification and analysis

Russian microelectronics, 2007-05, Vol.36 (3), p.139-147

2007

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Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n{sup +}-Si-SiO{sub 2}-n-Si heterostructures

Semiconductors (Woodbury, N.Y.), 2007-09, Vol.41 (9)

2007

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Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures

The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler–Nordheim tunneling

Problems of relaxation spectroscopy of localised electron states

Ion transport phenomena in oxide layer on the silicon surface and electron–ion exchange effects at the SiO2/Si interface

Increase in the Rate and Discretization of the Kinetics of Isothermal Surface Generation of Minority Charge Carriers in Metal–Insulator–Semiconductor Structures with a Planar-Inhomogeneous Insulator

Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures

Improving the Accuracy in Determining the Insulator Capacitance in Metal–Insulator–Semiconductor Structures

Energy dependence of the carrier capture coefficient for neutral shallow impurities in semiconductors

Determination of the absolute value of the semiconductor surface potential by the quasi-static capacitance-voltage characteristics of an MIS structure

Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide

Direct tunneling of electrons in Al-n+-Si-SiO2-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

Direct tunneling of electrons in Al-n{sup +}-Si-SiO{sub 2}-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers

A new approach to the creation of nanoelectronic systems using a dimensionally-quantized potential relief of charges built into insulating layers on a semiconductor surface

Conductivity of the insulating (oxide) layer on the surface of a semiconductor caused by electron-ion interaction at the insulator-semiconductor boundary

On the origin of the thermal-field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures

Free ion transport in the insulator layer and electron-ion exchange at an insulator-semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures

Reconstruction of the potential profile in an insulating layer using current-voltage characteristics of tunneling MIS diodes

A manifestation of the tunneling conductivity of a thin-gate insulator in the generation kinetics of minority carriers in metal-insulator-semiconductor structures

Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures

Kinetics of ion depolarization of Si-MOS structures in the linear voltage sweep regime

Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures

Increase in the electron mobility in the inversion channel of a Si-MOS transistor in the case of ion polarization of the gate oxide

Determining electrophysical characteristics of metal-oxide-semiconductor structures from the data of voltage-capacitance analysis of the depletion region of a semiconductor surface

C-V and I-V characteristics of ultrathin-oxide MOS structures: Identification and analysis

Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n{sup +}-Si-SiO{sub 2}-n-Si heterostructures

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