UB Paderborn / Katalog / Suche / in CDI

International Symposium on Low Power Electronics and Design: Proceedings of the 2001 international symposium on Low power electronics and design, 2001, p.147-152

2001

Link zum Volltext

Verfügbarkeit prüfen

A 1.1 GHz 12 \muA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications

IEEE journal of solid-state circuits, 2008-01, Vol.43 (1), p.172-179

2008

Link zum Volltext
IEEE_Xplore

A 32nm high-k and metal-gate anti-fuse array featuring a 1.01µm2 1T1C bit cell

2012 Symposium on VLSI Technology (VLSIT), 2012, p.79-80

2012

Link zum Volltext
IEEE_Xplore

Sensitivity analysis of longitudinal cracking on asphalt pavement using MEPDG in permafrost region

Journal of Traffic and Transactions Engineering（English Edition）, 2015-02, Vol.2 (1), p.40-47

2015

Link zum Volltext

Verfügbarkeit prüfen

A 1.1 GHz 12 [mu]A/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications

IEEE journal of solid-state circuits, 2008-01, Vol.43 (1), p.172-179

2008

Link zum Volltext

Verfügbarkeit prüfen

A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 μm2 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS

IEEE journal of solid-state circuits, 2010, Vol.45 (4), p.863-868

2010

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 226

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(183)
Mit Volltextzugriff
(220)

Publikationsform

Sprache

Englisch
(218)
Japanisch
(11)
Chinesisch
(10)

Erscheinungsjahr

n.n

Thema

Science & Technology
(153)
Technology
(112)
Engineering
(83)
Materials Science
(66)
Materials Science, Multidisciplinary
(56)
Physical Sciences
(46)
Engineering, Civil
(42)
Construction & Building Technology
(37)
Life Sciences & Biomedicine
(29)
Chemistry
(28)
Engineering, Electrical & Electronic
(20)
Mechanical Properties
(19)
Physics
(19)
Science & Technology - Other Topics
(19)
Asphalt
(17)
Analysis
(16)
Physics, Applied
(16)
Asphalt Pavements
(15)
Exact Sciences And Technology
(13)
Chemistry, Physical
(11)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(4)

Menü

Weitere Dienste

Einstellungen

A 0.9-μm² 1T1R Bit Cell in 14-nm High-Density Metal Fuse Technology for High-Volume Manufacturing and In-Field Programming

A 3-GHz 70-mb SRAM in 65-nm CMOS technology with integrated column-based dynamic power supply

SRAM design on 65-nm CMOS technology with dynamic sleep transistor for leakage reduction

A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 \mu m ^ 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS

A 1.1 GHz 12 μA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications

A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology

Design and optimization of low voltage high performance dual threshold CMOS circuits

A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS

A 0.9-μ² 1T1R Bit Cell in 14-nm High-Density Metal Fuse Technology for High-Volume Manufacturing and In-Field Programming

A High-Output Power 1-V Charge Pump and Power Switch for Configurable, In-Field-Programmable Metal eFuse on Intel 4 Logic Technology

A High Output Power 1V Charge Pump and Power Switch for Configurable, In-Field-Programmable Metal eFuse on Intel 4 Logic Technology

Mixed-Vth (MVT) CMOS circuit design methodology for low power applications

On effective IDDQ testing of low-voltage CMOS circuits using leakage control techniques

Vertically integrated SOI circuits for low-power and high-performance applications

Estimation of power dissipation using a novel power macromodeling technique

A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 mu m 2 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS

A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 [Formula Omitted]m[Formula Omitted] 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS

Efficient statistical approach to estimate power considering uncertain properties of primary inputs

Three-dimensional modeling and simulation of asphalt concrete mixtures based on X-ray CT microstructure images

Comparative delay and energy of single edge-triggered & dual edge-triggered pulsed flip-flops for high-performance microprocessors

A 1.1 GHz 12 \muA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications

A 32nm high-k and metal-gate anti-fuse array featuring a 1.01µm2 1T1C bit cell

Sensitivity analysis of longitudinal cracking on asphalt pavement using MEPDG in permafrost region

A 1.1 GHz 12 [mu]A/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications

A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 μm2 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS

Suchergebnisse filtern