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Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

Scripta materialia, 2015-04, Vol.99, p.53-56

2015

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Geometrical effects in high current gain 1100-V 4H-SiC BJTs

IEEE electron device letters, 2005-10, Vol.26 (10), p.743-745

2005

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High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

IEEE electron device letters, 2009-11, Vol.30 (11), p.1170-1172

2009

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4H-SiC pseudo-CMOS logic inverters for harsh environment electronics

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1, Article 669

2017

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Advanced oxidation process combining oxide deposition and short postoxidation step for N-type 3C- and 4H-SiC

Journal of applied physics, 2009-08, Vol.106 (4)

2009

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Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation

IEEE electron device letters, 2011-05, Vol.32 (5), p.596-598

2011

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Comparative study of thermally grown oxides on n-type free standing 3C-SiC (001)

Journal of applied physics, 2009-08, Vol.106 (4)

2009

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Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Applied physics letters, 2008-02, Vol.92 (8), p.082113

2008

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Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

Journal of crystal growth, 2012-03, Vol.343 (1), p.133-137

2012

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High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1894-1898, Article 1894

2008

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Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures

Journal of the Electrochemical Society, 2011, Vol.158 (5), p.H496

2011

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Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Solid-state electronics, 2002-09, Vol.46 (9), p.1433-1440

2002

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Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

Applied physics letters, 2011-01, Vol.98 (4), p.042108

2011

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Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1907-1911

2008

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4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters

Materials science forum, 2019-07, Vol.963, p.837-840

2019

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Total dose effects on 4H-SiC bipolar junction transistors

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1

2017

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Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC

Materials science forum, 2010-01, Vol.645-648, p.829-832

2010

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Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

Materials Science Forum, 2009-01, Vol.615-617, p.833-836

2009

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Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide

Solid-state electronics, 2000-07, Vol.44 (7), p.1179-1186

2000

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Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization

Journal of electronic materials, 2001-03, Vol.30 (3), p.247-252

2001

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Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE

Materials science forum, 2009-01, Vol.615-617, p.841-844

2009

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SiC bipolar devices for high power and integrated drivers

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2011, p.227-234

2011

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Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

Materials science forum, 2009-01, Vol.600-603, p.635-638

2009

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Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.444-449

2001

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Single-step synthesis process of Ti 3 SiC 2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

Scripta materialia, 2015-04, Vol.99, p.53-56

2015

Volltextzugriff (PDF)

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Single-step synthesis process of Ti3SiC2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

Geometrical effects in high current gain 1100-V 4H-SiC BJTs

High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

4H-SiC pseudo-CMOS logic inverters for harsh environment electronics

Advanced oxidation process combining oxide deposition and short postoxidation step for N-type 3C- and 4H-SiC

Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation

Comparative study of thermally grown oxides on n-type free standing 3C-SiC (001)

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE

Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures

Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation

4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters

Total dose effects on 4H-SiC bipolar junction transistors

Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC

Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability

Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide

Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization

Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE

SiC bipolar devices for high power and integrated drivers

Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide

Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC

Single-step synthesis process of Ti 3 SiC 2 ohmic contacts on 4H-SiC by sputter-deposition of Ti

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