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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Journal of applied physics, 2019-11, Vol.126 (18)

2019

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Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

Materials, 2022-12, Vol.15 (24), p.8945

2022

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Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

Applied physics letters, 2023-09, Vol.123 (12)

2023

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Critical spatial disorder in InGaN resonant Bragg structures

Applied physics letters, 2022-07, Vol.121 (4)

2022

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AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

Materials, 2023-06, Vol.16 (12), p.4265

2023

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Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (Suppl 1), p.S49-S53

2021

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Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12202

2021

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Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells

Journal of applied physics, 2017-04, Vol.121 (13)

2017

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Determination of hole diffusion length in n-GaN

Journal of physics. Conference series, 2021-12, Vol.2086 (1), p.12075

2021

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Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (14), p.1900-1903

2019

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Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12153

2020

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Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data

Journal of physics. Conference series, 2021-11, Vol.2103 (1), p.12147

2021

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A GaN/AlGaN Resonance Bragg Structure

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.782-785

2023

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Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

Physica status solidi. A, Applications and materials science, 2016-01, Vol.213 (1), p.19-29

2016

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Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12206

2020

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Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

Journal of physics. Conference series, 2019-11, Vol.1400 (7), p.77009

2019

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Study of silicon nitride deposition in III-N MOVPE reactors

Journal of crystal growth, 2020-12, Vol.551, p.125906, Article 125906

2020

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Critical Disorder in InGaN/GaN Resonant Bragg Structures

Bulletin of the Russian Academy of Sciences. Physics, 2023-06, Vol.87 (6), p.853-856

2023

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Phonons in short-period (GaN)m(AlN)n superlattices: ab initio calculations and group-theoretical analysis of modes and their genesis

Journal of physics. Conference series, 2019-11, Vol.1400 (6), p.66016

2019

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Investigation of Statistical Broadening in InGaN Alloys

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12050

2018

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The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

Technical physics letters, 2020-12, Vol.46 (12), p.1211-1214

2020

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Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

Semiconductor science and technology, 2018-01, Vol.33 (2)

2018

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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

Journal of crystal growth, 2018-12, Vol.504, p.1-6

2018

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Proton irradiation effects on GaN-based epitaxial structures

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12073

2020

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Raman spectra of interface phonons in long-period AlN/GaN superlattices as a tool for determination of the structure period

Journal of physics. Conference series, 2019-11, Vol.1400 (6), p.66003

2019

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Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

Critical spatial disorder in InGaN resonant Bragg structures

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells

Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells

Determination of hole diffusion length in n-GaN

Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells

Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells

Analysis of the sharpness of interfaces in short-period GaN/AlN superlattices using Raman spectroscopy data

A GaN/AlGaN Resonance Bragg Structure

Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency

Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors

Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation

Study of silicon nitride deposition in III-N MOVPE reactors

Critical Disorder in InGaN/GaN Resonant Bragg Structures

Phonons in short-period (GaN)m(AlN)n superlattices: ab initio calculations and group-theoretical analysis of modes and their genesis

Investigation of Statistical Broadening in InGaN Alloys

The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE

Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

Proton irradiation effects on GaN-based epitaxial structures

Raman spectra of interface phonons in long-period AlN/GaN superlattices as a tool for determination of the structure period

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